2SB1151

TIGER ELECTRONIC CO.,LTD Product specification Complementary Silicon Power Ttransistors 2SD1691 / 2SB1151 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Peak Current Total Dissipation at Max. Operating Junction Temperature O l VCBO VCEO VEBO IC IC(peak) Ptot Tj Tstg Value 60 60 7.0 5.0 8.0 20 150 -55~150 Unit V V V A A W o o C C TO-126 Storage Temperature ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Collector Cutoff Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage Symbol Test Conditions VCB=50V, IE=0 VEB=7.0V, IC=0 IC=10mA, IB=0 VCE=1.0V, IC=0.1A VCE=1.0V, IC=2.0A VCE=1.0V, IC=5.0A Min. — — 60 60 100 50 — — — Typ. — — — — — — — — — Max. 10 10 — — 400 — 0.3 1.2 2.5 V V us Unit uA uA V O ICBO IEBO VCEO hFE(1) hFE(2) hFE(3) DC Current Gain Collector-Emitter Saturation Voltage Base - Emitter Saturation Voltage Storage Time VCE(sat) IC=2.0A,IB=0.2A VBE(sat) IC=2.0A,IB=0.2A tstg IC=2.0A, IB1=-IB2=0.2A hfe(2): M 100~200, L 160~320, K 200~400 EAST SEMICONDUCTOR CO., LTD Phone: 86-510-83880883 Fax: 86-510-83883883