2SC1674

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors 2SC1674 TRANSISTOR (NPN) TO-92 FEATURES High current gain bandwidth product fT=600MHz(Typ.), High power gain GPE=22dB at f=100MHz MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power dissipation Junction Temperature Storage Temperature Value 30 20 4 20 250 150 -55-150 Units V V V mA mW ℃ ℃ 123 1.EMITTER 2 COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(ON) Test conditions MIN 30 20 4 0.1 0.1 40 180 0.3 0.65 400 1.3 0.77 V V MHz MAX UNIT V V V μA μA IC= 100μA, IE=0 IC= 1mA, IB=0 IE= 100μA,IC=0 VCB= 30V, IE=0 VEB=3V, IC=0 VCE=6 V, IC= 1mA IC=10mA, IB= 1mA VCE=6V, IC= 1mA VCE=6 V, IC= 1mA VCE=6V,IE=0, f =1MHz fT Cob pF CLASSIFICATION OF hFE Rank Range Y 40-80 GR 60-120 BL 90-180