2SC2120

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors TO – 92 2SC2120 TRANSISTOR (NPN) 1. EMITTER FEATURES High DC Current Gain Complementary to 2SA950 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 35 30 5 0.8 600 208 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE Cob fT Test conditions Min 35 30 5 0.1 0.1 0.1 100 320 0.5 0.8 13 100 V V pF MHz Typ Max Unit V V V μA μA μA IC= 0.1mA,IE=0 IC=10mA,IB=0 IE=0.1mA,IC=0 VCB=35V,IE=0 VCE=25V,IB=0 VEB=5V,IC=0 VCE=1V, IC=100mA IC=500mA,IB=20mA VCE=1V, IC=10mA VCB=10V,IE=0, f=1MHz VCE=5V,IC=10mA CLASSIFICATION OF hFE RANK RANGE O 100-200 Y 160-320 B,Dec,2011 Typical Characterisitics 200 2SC2120 1000 Static Characteristic 1mA 900uA 800uA COMMON EMITTER Ta=25℃ hFE hFE —— IC COMMON EMITTER VCE=1V (mA) 160 700uA 600uA Ta=100℃ IC COLLECTOR CURRENT 120 500uA 400uA DC CURRENT GAIN Ta=25℃ 100 80 300uA 200uA 40 IB=100uA 0 0.0 10 0.4 0.8 1.2 1.6 2.0 1 3 10 30 100 300 800 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) 600 VCEsat —— IC β=25 2 VBEsat —— IC β=25 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 300 BASE-EMITTER SATURATION VOLTAGE VBEsat (V) 1 Ta=25℃ 100 Ta=100℃ Ta=100℃ Ta=25℃ 30 10 1 3 10 30 100 300 800 0.1 1 3 10 30 100 300 800 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) 800 IC COMMON EMITTER VCE=1V —— VBE 100 Cob/ Cib —— VCB/ VEB f=1MHz IE=0/ IC=0 300 (mA) Cib Ta=100℃ (pF) 30 Ta=25℃ COLLECTOR CURRENT IC 100 C CAPACITANCE 30 Cob 10 10 Ta=25℃ 3 3 1 0.2 0.4 0.6 0.8 1.0 1 0.1 0.3 1 3 10 20 BASE-EMMITER VOLTAGE VBE (V) REVERSE VOLTAGE V (V) 500 fT VCE=5V Ta=25℃ —— IC 800 PC —— Ta (MHz) COLLECTOR POWER DISSIPATION Pc (mW) 1 10 30 100 600 TRANSITION FREQUENCY fT 100 400 200 10 3 0 0 25 50 75 100 125 150 COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃ ) B,Dec,2011