2SC2314

TIGER ELECTRONIC CO.,LTD Product specification NPN EPITAXIAL PLANAR SILICON TRANSISTORS 2SC2314 DESCRIPTION 27 MHz CB Transceiver Driver Applications ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Dissipation at Max. Operating Junction Temperature O l VCBO VCEO VEBO IC ICP Ptot Tj Tstg Value 75 45 5.0 1.0 1.5 5.0 150 -55~150 Unit V V V A A W o o C C Storage Temperature TO-126 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Qutput Capacitance Symbol Test Conditions VCB=40V, IE=0 VEB=4.0V, IC=0 IC=1.0mA, IB=0 VCE=5V, IC=0.5A Min. — — 45 60 — — 180 Typ. — — — — — — — Max. 1.0 1.0 — 320 0.6 1.2 — 25 V V MHz pF Unit uA uA V ICBO IEBO VCEO hFE VCE(sat) IC=0.5A,IB=50mA VBE(sat) IC=0.5A,IB=50mA fT Cob VCE=10V,IC=50mA VCB=10V,f=10MHz Hfe Classification: D=60~120 , E=100-200, F=160-320