2SC3834

TIGER ELECTRONIC CO.,LTD Silicon NPN Triple Diffused Planar Transistor Product specification 2SC3834 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature O Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 200 120 8.0 7.0 3.0 50 150 -55~150 Unit V V V A A W o o C C Storage Temperature TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Symbol Test Conditions VCB=200V, IE=0 VEB=8V, IC=0 IC=50mA, IB=0 VCE=4V, IC=0.3A VCE=4V, IC=3.0A 120 100 70 220 0.5 1.2 10 V V MHz Min. Typ. Max. 0.1 0.1 Unit mA mA V ICBO IEBO VCEO hFE(1) hFE(2) VCE(sat) IC=3.0A,IB=300mA VBE(sat) IC=3.0A,IB=300mA fT VCE=12V,IC=500mA