2SC945

TIGER ELECTRONIC CO.,LTD TO-92 2SC945 TRANSISTOR (NPN ) 1.EMITTER Plastic-Encapsulate Transistors TO-92 FEATURE Excellent hFE linearity Low noise Complementary to A733 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 400 125 -55-125 Unit V V V mA mW ℃ ℃ 2.COLLECTOR 3. BASE ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob NF Test conditions Min 60 50 5 0.1 0.1 0.1 70 40 0.3 1 200 3.0 10 V V MHz pF dB 700 Typ Max Unit V V V μA μA μA IC=1mA , IE=0 IC=100 μA , IB=0 IE=100 μ A, IC=0 VCB=60V, IE=0 VCE=45V, IB=0 VEB=5V ,IC=0 VCE=6V , IC=1mA VCE=6V , IC=0.1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V,IC=10mA,f=30MHz VCB=10V,IE=0,f=1MHz VCE=6V,IC=0.1mA RG=10kΩ,f=1MHz CLASSIFICATION OF hFE(1) Rank Range O 70-140 Y 120-240 GR 200-400 BL 350-700 A,Jan,2011