BAV70LT1

TIGER ELECTRONIC CO.,LTD SOT-23 Plastic-Encapsulate Diodes BAW56/BAV70/BAV99 SOT-23 SWITCHING DIODE FEATURES Fast Switching Speed For General Purpose Switching Applications High Conductance BAW56 Marking: A1 BAV70 Marking: A4 BAV99 Marking: A7 Maximum Ratings @Ta=25℃ Parameter Reverse Voltage Forward Current Peak Forward Surge Current Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range Symbol VR IF IFM(surge) PD RθJA TJ TSTG Limit 70 200 500 225 556 150 -55~+150 Unit V mA mA mW ℃/W ℃ ℃ Electrical Characteristics @Ta=25℃ Parameter Reverse breakdown voltage Symbol VR VF1 Forward voltage VF2 VF3 VF4 Reverse current Capacitance between terminals Reverse recovery time IR CT t rr Min 70 0.715 0.855 1 1.25 2.5 1.5 6 Typ Max Unit V V V V V μA pF ns Conditions IR=100μA IF=1mA IF=10mA IF=50mA IF=150mA VR=70V VR=0,f=1MHz IF = IR = 10mA, Irr= 0.1 x IR, RL = 100Ω A,May,2011 Typical Characteristics Forward 300 BAV99 Reverse Characteristics Characteristics 1000 100 300 (mA) (nA) Ta =1 00 ℃ 30 Ta=100℃ 100 IF FORWARD CURRENT 10 REVERSE CURRENT IR Ta =2 5℃ 30 3 10 1 Ta=25℃ 0.3 3 0.1 0.0 0.4 0.8 1.2 1.6 1 0 20 40 60 80 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) Capacitance Characteristics 1.4 300 Power Derating Curve Ta=25℃ f=1MHz 250 CAPACITANCE BETWEEN TERMINALS CT (pF) 1.3 (mW) POWER DISSIPATION PD 200 150 100 1.2 1.1 50 1.0 0 5 10 15 20 0 0 25 50 75 100 125 150 REVERSE VOLTAGE VR (V) AMBIENT TEMPERATURE Ta (℃) A,May,2011