BC338

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors BC337/BC338 FEATURES Power dissipation MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage BC337 BC338 VCEO Collector-Emitter Voltage BC337 BC338 VEBO IC PD Tj Tstg Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction Temperature Storage Temperature Value 50 30 45 25 5 800 625 150 -55-150 Unit V TRANSISTOR (NPN) TO-92 1. COLLECTOR 2.BASE 3. EMITTER V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage BC337 BC338 Collector-emitter breakdown voltage BC337 BC338 Emitter-base breakdown voltage Collector cut-off current BC337 BC338 Collector cut-off current BC337 BC338 Emitter cut-off current BC337/BC338 BC337-16/BC338-16 BC337-25/BC338-25 BC337-40/BC338-40 DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector Output Capacitance Symbol VCBO Test conditions MIN 50 30 IC= 10mA , VCEO VEBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE IE= 10uA, IC=0 VCB= 45V, IE=0 VCB= 25V, IE=0 VCE= 40V, IB=0 VCE= 20V, IB=0 VEB= 4 V, IC=0 VCE=1V, IC= 100mA VCE=1V, IC= 300mA IC=500mA, IB= 50mA IC= 500mA, IB=50mA VCE=1V, IC= 300mA VCE= 5V, IC= 10mA f = 100MHz VCB=10V,IE=0 f=1MHZ IB=0 45 25 5 0.1 0.1 0.2 0.2 0.1 630 250 400 630 0.7 1.2 1.2 210 15 V V V uA uA uA TYP MAX UNIT V V IC= 100uA, IE=0 100 100 160 250 60 V V V MHz pF fT Cob A,May,2011