BC548

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors BC546/BC547/BC548 TRANSISTOR (NPN) FEATURES High Voltage Complement to BC556,BC557,BC558 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO VEBO IC PD TJ Tstg Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction Temperature Storage Temperature BC546 BC547 BC548 BC546 BC547 BC548 Value 80 50 30 65 45 30 6 100 625 150 -55-150 Unit TO-92 1. COLLECTOR 2. BASE 3. EMITTER V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage BC546 BC547 BC548 BC546 BC547 BC548 Symbol VCBO Test conditions Min 80 50 30 65 45 30 6 0.1 Max Unit V IC= 100μA , IE=0 Collector-emitter breakdown voltage VCEO VEBO ICBO IC= 1mA , IB=0 IE= 10μA, IC=0 VCB= 70V, IE=0 VCB= 50 V, IE=0 VCB= 30V, IE=0 VCE= 60 V, IB=0 VCE= 45 V, IB=0 VCE= 30 V, IB=0 VEB= 5V, IC=0 V V μA Emitter-base breakdown voltage Collector cut-off current BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546 BC547 BC548 BC546A/BC547A/BC548A BC546B/BC547B/BC548B BC546C/BC547C/BC548C Collector cut-off current ICEO 0.1 μA Emitter cut-off current IEBO 0.1 110 110 110 110 200 420 800 800 800 220 450 800 0.3 1.1 150 μA DC current gain hFE VCE=5V, IC= 2mA Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT IC=100mA, IB= 5mA IC= 100mA, IB=5mA VCE= 5V, IC= 10mA f = 100MHz V V MHz A,May,2011