BD140

TIGER ELECTRONIC CO.,LTD Product specification Complementary Silicon Power Ttransistors BD139 / BD140 DESCRIPTION It is intented for use in power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature O l VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 80 80 5 1.5 0.5 12.5 150 -55~150 Unit V V V A A W o o C C Storage Temperature TO-126 ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Symbol Test Conditions VCB=80V, IE=0 VEB=5V, IC=0 IC=30mA, IB=0 VCE=2V, IC=0.5A VCE=2V, IC=150mA Min. — — 80 25 40 — — 3 Typ. — — — — — — — — Max. 10 10 — — 250 0.5 1.0 — V V MHz Unit uA uA V ICEO IEBO VCEO hFE(1) hFE(2) VCE(sat) IC=0.5A,IB=50mA VBE(sat) VCE=2V,IC=0.5A fT VCE=10V,IC=500mA