BD682

TIGER ELECTRONIC CO.,LTD Product specification COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS DESCRIPTION The BD681, are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-126 plastic package. They are intended for use in medium power linar and switching applications The complementary PNP types are BD682, respectively. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature O BD681/BD682 Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 100 100 5 4.0 0.1 40 150 -55~150 Unit V V V A A W o C C Storage Temperature o ELECTRICAL CHARACTERISTICS ( Ta = 25 C) R Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Voltage Symbol Test Conditions VCE=100V, IB=0 VCB=100V, IE=0 VEB=5V, IC=0 IC=50mA, IB=0 VCE=3V, IC=1.5A Min. — — — 100 750 — — Typ. — — — — — — — Max. 0.2 0.5 2.0 — — 2.5 2.5 V V Unit mA mA mA V O ICEO ICBO IEBO VCEO hFE(1) VCE(sat) IC=1.5A,IB=30mA VBE VCE=3V,IC=1.5A