BDX53F

TIGER ELECTRONIC CO.,LTD Product specification Complementary Silicon Power Darlington Ttransistors BDX53F / BDX54F DESCRIPTION The BDX53F are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP types are BDX54F respectively. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature O Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 160 160 5 8.0 0.2 60 150 -55~150 Unit V V V A A W o C C Storage Temperature o TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Parallel-diode Forward Voltage Symbol Test Conditions VCB=160V, IE=0 VCE=80V, IB=0 VEB=5.0V, IC=0 IC=50mA, IB=0 VCE=5V, IC=2.0A Min. — — — 160 500 — — — Typ. — — — — — — — — Max. 0.2 0.5 2.0 — — 2.0 2.5 2.5 V V V Unit mA mA mA V O ICBO ICEO IEBO VCEO hFE VCE(sat) IC=2.0A,IB=10mA VBE(sat) IC=2.0A,IB=10mA VF IF=2A