BDX54C

TIGER ELECTRONIC CO.,LTD Product specification Complementary Silicon Power Darlington Ttransistors BDX53C / BDX54C DESCRIPTION The BDX53C are silicon Epitaxial-Base NPN power transistors in monolithic Darlington configuration mounted in Jedec TO-220 plastic package. They are intented for use in hammer drivers, audio amplifiers and other medium power linear and switching applications. The complementary PNP types are BDX54C respectively. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature O Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 100 100 5 8.0 0.2 60 150 -55~150 Unit V V V A A W o C C Storage Temperature o TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Parallel-diode Forward Voltage Symbol Test Conditions VCB=100V, IE=0 VCE=50V, IB=0 VEB=5.0V, IC=0 IC=100mA, IB=0 VCE=3V, IC=3.0A Min. — — — 100 750 — — — Typ. — — — — — — — — Max. 0.2 0.5 2.0 — — 2.0 2.5 2.5 V V V Unit mA mA mA V O ICBO ICEO IEBO VCEO hFE VCE(sat) IC=3.0A,IB=12mA VBE(sat) IC=3.0A,IB=12mA VF IF=3A