BT169D

TIGER ELECTRONIC CO.,LTD Product specification Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristors ina plastic envelope, intended foruse in general purpose switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT169 series ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current Max. Operating Junction Temperature Storage Temperature Symbol VDRM VRRM IT(AV) IT(RMS) ITSM Tj Tstg Typ BT169D BT169G O Unit V A A A o 400 0.5 0.8 8.0 110 600 C C TO-92 -45~150 O o ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Repetitive peak off-state voltage s Average on-state current RMS on-state current On-state voltage Holding current Latching current Gate trigger current Gate trigger voltage Symbol VDRM VRRM IT(AV) IT(RMS) VT IH IL IGT VGT half sine wave; Tmb< 103 oC all conduction angles IT=1.0 A VD =12 V; IGT = 0.5 mA VD =12 V; IGT = 0.5 mA VD =12 V; IT = 10 mA VD =12 V; IT = 10 mA Test Conditions Min — — — — — — — — Typ BT169D BT169G Max — — — 1.35 5 6 200 0.8 Unit V A A V mA mA uA V 400 0.5 0.8 600 1.20 0.5 0.6 15 0.5