BU2508DF

TIGER ELECTRONIC CO.,LTD Product specification Silicon Diffused Power Transistor BU2508DF GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low worst case dissipation. ABSOLUTE MAXIMUM RATINGS Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 1500 700 6 8.0 3.5 45 150 -65~150 Unit V V V A A W o o C C TOP-3Fa Storage Temperature ELECTRICAL CHARACTERISTICS (Tcase = 25 ℃ unless otherwise specified) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Diode forward voltage Symbol Test Conditions VCB=1500V, IE=0 VEB=7.5V, IC=0 IC=100mA, IB=0 VCE=5.0V, IC=1.0A VCE=1.0V, IC=4.5A Min. — — 700 — 4 — — — Typ. — 227 — 13 — — — 1.6 Max. 1.0 — — — 10 1.0 1.1 2.0 V V V Unit mA mA V ICES IEBO VCEO hFE(1) hFE(2) VBE(sat) VF VCE(sat) IC=4.5A,IB=1.12A IC=4.5A,IB=1.7A IF=4.5A