BU406

TIGER ELECTRONIC CO.,LTD NPN Epitaxial Silicon Transistor Product specification BU406 High Voltage Switching * Use In Horizontal Deflection Output Stage Absolute Maximum Ratings ( Ta = 25 Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature ) Value 400 200 6 7.0 4.0 60 150 Unit V V V A A W o o Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg C C Storage Temperature -55~150 TO-220 Electrical Characteristics ( Ta = 25 Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn Off Time ) Test Conditions VCE=400V, IE=0 VCE=250V, IE=0 VEB=6V, IC=0 IC=50mA, IB=0 VCE=4V, IC=1.0A 200 10 1.0 1.2 10 0.75 V V MHz us Min. Typ. Max. 5.0 0.1 1.0 mA V Unit mA Symbol ICES IEBO VCEO hFE(1) VCE(sat) IC=5.0A,IB=0.5A VBE(sat) IC=5.0A,IB=0.5A fT tOFF VCE=10V, IC=0.5A IC=5A, IB=0.5A