TIGER ELECTRONIC CO.,LTD
NPN Epitaxial Silicon Transistor
Product specification
BU406
High Voltage Switching * Use In Horizontal Deflection Output Stage
Absolute Maximum Ratings ( Ta = 25
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at
Max. Operating Junction Temperature
)
Value 400 200 6 7.0 4.0 60 150 Unit V V V A A W
o o
Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg
C C
Storage Temperature
-55~150
TO-220
Electrical Characteristics ( Ta = 25
Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Turn Off Time
)
Test Conditions VCE=400V, IE=0 VCE=250V, IE=0 VEB=6V, IC=0 IC=50mA, IB=0 VCE=4V, IC=1.0A 200 10 1.0 1.2 10 0.75 V V MHz us Min. Typ. Max. 5.0 0.1 1.0 mA V Unit mA
Symbol
ICES IEBO VCEO hFE(1)
VCE(sat) IC=5.0A,IB=0.5A VBE(sat) IC=5.0A,IB=0.5A
fT tOFF VCE=10V, IC=0.5A IC=5A, IB=0.5A
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免费人工找货- 国内价格
- 1+1.00215
- 30+0.9639
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