BU806

TIGER ELECTRONIC CO.,LTD Product specification MEDIUM Voltage & Fast Switching DarlingtonTransistor DESCRIPTION The devices are silicon Epitaxial Planar NPN power transistors in Darlington configuration with integrated base-emitter speed-up diode, mounted in TO-220 plastic package. They can be used in horizontal output stages of 110 oCRT video displays. BU806 Absolute Maximum Ratings ( Ta = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature l VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 400 200 6 8.0 2.0 60 150 -55~150 Unit V V V A A W o o C C TO-220 Storage Temperature Electrical Characteristics ( Ta = 25℃ ) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Damper Diode Forward Voltage Storage Time Symbol Test Conditions VCE=400V, VBEO=0 VEB=6V, IC=0 IC=100mA, IB=0 VCE=5V, IC=5.0A Min. — — 200 200 — — — — Typ. — — — — — — — 0.55 Max. 100 3.5 — — 1.5 2.4 2 — V V V us Unit uA mA V ICES IEBO VCEO hFE(1) VCE(sat) IC=5.0A,IB=50mA VBE(sat) IC=5.0A,IB=50mA VF TS IF=4.0A IC=5A, IB=0.5A