C106M

TIGER ELECTRONIC CO.,LTD Product specification Thyristors logic level GENERAL DESCRIPTION Passivated, sensitive gate thyristor in a plastic envelope, intended for use in general purpose switching and phase control applications. This device is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits C106M Parameter Repetitive peak off-state voltages Average on-state current RMS on-state current Non-repetitive peak on-state current Max. Operating Junction Temperature Storage Temperature Symbol VDRM VRRM IT(AV) IT(RMS) ITSM Tj Tstg Max 400 2.5 4.0 38 110 -45~150 Unit V A A A o C C o Parameter Repetitive peak off-state voltages Average on-state current RMS on-state current On-state voltage Holding current Latching current Gate trigger current Gate trigger voltage Symbol VDRM VRRM IT(AV) IT(RMS) VT IH IL IGT VGT Test Conditions Min 400 Typ Max Unit V half sine wave; Tmb< 103 oC all conduction angles IT=5.0A VD =12 V; IGT = 0.1 A VD =12 V; IGT = 0.1 A VD =12 V; IT = 0.1 A VD =12 V; IT = 0.1 A 2.5 4.0 1.23 0.1 0.17 15 0.4 1.8 6.0 10 200 1.5 A A V mA mA uA V