TIGER ELECTRONIC CO.,LTD
500V N-Channel MOSFET
DESCRIPTION
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supply.
FQD5N50
ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C)
Parameter Drain-Source Voltage Drain Current - Continuous Drain Current - Pulsed Gate-Source Voltage Power Dissipation
Max. Operating Junction Temperature
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Symbol VDSS ID IDM VGSS PD Tj Tstg
Value 500 3.5 14 ±30 50 150 -55~150
Unit V A A V W
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C C
TO-252
Storage Temperature
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ELECTRICAL CHARACTERISTICS ( Ta = 25 C)
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source Diode Forward Voltage Symbol Test Conditions Min. 500 — — — 3.0 — — Typ. — — — — — — — Max. — 1.0 100 -100 5.0 1.8 1.4 Unit V uA nA nA V W V
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BVDSS VGS = 0V, ID =250μA IDSS IGSSF IGSSR VGS(th) VSD
VDS =500V, VGS =0V VGS =30V, VDS =0V VGS = -30V, VDS =0V VDS = VGS , ID =250μA
RDS(on) VGS = 10 V, ID = 1.75 A
VGS = 0 V, IS = 3.5 A
Product specification
500V N-Channel MOSFET
Typical Characteristics
FQD5N50
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