FQPF4N60

TIGER ELECTRONIC CO.,LTD Product specification 600V N-Channel MOSFET DESCRIPTION FQPF4N60 These N-Channel enhancement mode power field effect transistors are produced using proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Drain-Source Voltage Drain Current - Continuous Drain Current - Pulsed Gate-Source Voltage Power Dissipation Max. Operating Junction Temperature O l VDSS ID IDM VGSS PD Tj Tstg Value 600 4.4 17.6 ±30 106 150 -55~150 Unit V A A V W o o C C Storage Temperature TO-220F ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source Diode Forward Voltage Symbol Test Conditions Min. 600 — — — 3.0 — — Typ. — — — — — 1.77 — Max. — 10 100 -100 5.0 2.2 1.4 Unit V uA nA nA V W V BVDSS VGS = 0V, ID =250μA IDSS IGSSF IGSSR VGS(th) VSD VDS =600V, VGS =0V VGS =30V, VDS =0V VGS = -30V, VDS =0V VDS = VGS , ID =250μA RDS(on) VGS = 10 V, ID = 2.2 A VGS = 0 V, IS = 4.4 A