FQPF50N06

TIGER ELECTRONIC CO.,LTD Product specification 60V N-Channel MOSFET DESCRIPTION FQPF50N06 These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products. ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) O Parameter Drain-Source Voltage Drain Current - Continuous Drain Current - Pulsed Gate-Source Voltage Power Dissipation Max. Operating Junction Temperature l VDSS ID IDM VGSS PD Tj Tstg Value 60 50 200 ±25 120 150 -55~150 Unit V A A V W o o C Storage Temperature C TO-220F ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Drain-Source Diode Forward Voltage Symbol Test Conditions Min. 60 — — — 2.0 — — — Typ. — — — — — 18 22 — Max. — 1.0 100 -100 4.0 22 — 1.5 Unit V uA nA nA V mΩ S V BVDSS VGS = 0V, ID =250μA IDSS IGSSF IGSSR VGS(th) gFS VDS =60V, VGS =0V VGS =25V, VDS =0V VGS = -25V, VDS =0V VDS = VGS , ID =250μA RDS(on) VGS = 10 V, ID = 25 A VDS = 25 V, ID = 25 A VGS = 0 V, IS = 50 A VSD