IRFS640B

TIGER ELECTRONIC CO.,LTD Product specification 200V N-Channel MOSFET DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary,planar, DMOS technology. This advanced technology has been minimize on-state resistance, provide superior switchingespecially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies, power factor correction and electronic lamp ballasts based on half bridge. IRFS640B ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Drain-Source Voltage Drain Current - Continuous Drain Current - Pulsed Gate-Source Voltage Power Dissipation Max. Operating Junction Temperature O Symbol VDSS ID IDM VGSS PD Tj Tstg Value 200 18 72 30 125 150 -55~150 Unit V A A V W o o C C Storage Temperature ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source Diode Forward Voltage Symbol Test Conditions Min. 200 10 100 -100 A 2.0 0.14 4.0 0.18 2.0 Typ. Max. Unit V uA uA uA V W V BVDSS VGS = 0V, ID =250 A IDSS IGSSF IGSSR VGS(th) VSD VDS =200V, VGS =0V VGS =30V, VDS =0V VGS = -30V, VDS =0V VDS = VGS , ID =250 RDS(on) VGS = 10 V, ID = 10.0 A VGS = 0 V, IS = 18.0 A