IRFZ44N

TIGER ELECTRONIC CO.,LTD Product specification N-Channel Power MOSFET DESCRIPTION Process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements. IRFZ44N ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) O Parameter Drain-Source Voltage Drain Current - Continuous Drain Current - Pulsed Gate-Source Voltage Power Dissipation Max. Operating Junction Temperature l VDSS ID IDM VGSS PD Tj Tstg Value 55 49 160 ±20 94 150 -55~150 Unit V A A V W o o C C TO-220 Storage Temperature ELECTRICAL CHARACTERISTICS ( Ta = 25 OC) Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse Gate Threshold Voltage Static Drain-Source On-Resistance Drain-Source Diode Forward Voltage Symbol Test Conditions Min. 55 — — — 2.0 — — Typ. — — — — 3.0 — — Max. — 10 100 -100 4.0 0.0175 1.3 Unit V uA nA nA V W V BVDSS VGS = 0V, ID =250μA IDSS IGSSF IGSSR VGS(th) VSD VDS =55V, VGS =0V VGS =20V, VDS =0V VGS = -20V, VDS =0V VDS = VGS , ID =250μA RDS(on) VGS = 10 V, ID = 25 A VGS = 0 V, IS = 25 A