KSC2334

TIGER ELECTRONIC CO.,LTD Product specification NPN Epitaxial Silicon Transistor DESCRIPTION High Speed Switching Industrial Use ◆ Complement to KSA1010 ABSOLUTE MAXIMUM RATINGS ( Ta = 25 C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature O KSC2334 Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value Unit 150 100 7 7.0 3.5 40 150 -55~15 0 V V V A A W o C C Storage Temperature o TO-220 ELECTRICAL CHARACTERISTICS ( Ta = 25 C) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Symbol Test Conditions VCB=100V, IE=0 VEB=5V, IC=0 IC=30mA, IB=0 VCE=5.0V, IC=0.5A VCE=5.0V, IC=3.0A VCE=5.0V, IC=5.0A Min. — — 100 40 40 20 — — — Typ. — — — — — — — — 0.5 Max. 10 10 — — 240 — 0.5 1.5 — V V μs Unit μA μA V O ICEO IEBO VCEO hFE(1) hFE(2) hFE(3) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Storage Time hFE(2) R: 40 ~ 80 O: 70 ~ 140 VCE(sat) IC=5.0A,IB=500mA VBE(sat) IC=5.0A,IB=500mA tS IB1 = -IB2 = 0.5A RL = 10Ω Y: 120 ~ 240