KSC5027

TIGER ELECTRONIC CO.,LTD Product specification High Voltage and High Reliability DESCRIPTION NPN Silicon Transistor High Speed Switching ■ W ide SOA ■ ■ KSC5027 Absolute Maximum Ratings ( Ta = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Dissipation at Max. Operating Junction Temperature l VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 1100 800 7.0 3.0 1.5 50 150 -55~150 Unit V V V A A W o o C C Storage Temperature TO-220 Electrical Characteristics ( Ta = 25℃ ) Parameter Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Sustaining Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Turn Off Time Symbol Test Conditions VCE=800V, IE=0 VEB=5V, IC=0 IC=10mA, IB=0 VCE=5V, IC=0.2A VCE=5V, IC=1.0A Min. — — 800 10 8 — — — — — Typ. — — — — — — — 15 60 — Max. 10 10 — 40 — 2.0 1.5 — — 3.0 V V MHz pF us Unit uA uA V ICBO IEBO VCEO hFE(1) hFE(2) VCE(sat) IC=1.5A,IB=0.3A VBE(sat) IC=1.5A,IB=0.3A fT Cob tS VCE=10V, IC=0.2A VCB=10V,IE=0,f=1.0MHz IC=5IB1=-2.5IB2=2.0A, hFE Classification Classification hFE1 N 10 ~ 20 R 15 ~ 30 O 20 ~ 40