KTA1271

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors TO – 92 KTA1271 TRANSISTOR (PNP) 1.EMITTER FEATURES High DC Current Gain Complementary to KTC3203 2.COLLECTOR 3.BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbo VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -35 -30 -5 -0.8 0.625 200 150 -55~+150 Unit V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector Output Capacitance Symbol V(BR)CBO V(BR) CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test conditions Min -35 -30 -5 -0.1 -0.2 -0.1 100 35 -0.7 -0.8 120 19 V V MHz pF 320 Typ Max Unit V V V μA μA μA IC= -0.1mA ,IE=0 IC=-10mA,IB=0 IE=-0.1mA,IC=0 VCB=-35V,IE=0 VCE=-25V,IB=0 VEB=-5V,IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-700mA IC=-500mA,IB=-20mA VCE=-1V, IC=-10mA VCE=-5V,IC=-10mA VCB=-10V, IE=0, f=1MHz CLASSIFICATION OF hFE(1) RANK RANGE O 100-200 Y 160-320 A,Dec,2010