LL4448

TIGER ELECTRONIC CO.,LTD LL4148/LL4448 High-speed switching diode Features 1. Small surface mounting type 2. High reliability 3. High speed (trr≤4 ns) Applications Extreme fast switches Construction Silicon epitaxial planar Absolute Maximum Ratings Tj=25℃ Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current Repetitive peak forward current Forward current Average forward current Power dissipation Junction temperature Storage temperature range VR=0 tp=1μs Test Conditions Type Symbol VRRM VR IFSM IFRM IF IFAV PV Tj Tstg Value 100 75 2 500 300 150 500 175 -65~+175 Unit V V A mA mA mA mW ℃ ℃ Maximum Thermal Resistance Tj=25℃ Parameter Junction ambient Test Conditions on PC board 50mm×50mm×1.6mm Symbol RthJA Value 500 Unit K/W TIGER ELECTRONIC CO.,LTD LL4148/LL4448 Electrical Characteristics Tj=25℃ Parameter Forward voltage Test Conditions IF=5mA IF=10mA IF=100mA Reverse current VR=20V VR=20V, Tj=150℃ VR=75V Breakdown voltage Diode capacitance Rectification efficiency Reverse recovery time IR=100μA,tp/T=0.01,tp=0.3ms VR=0, f=1MHz, VHF=50mV VHF=2V, f=100MHz IF= IR=10mA, iR=1mA IF=10mA, VR=6V, iR=0.1×IR, RL=100Ω Type LL4448 LL4148 LL4448 Symbol VF VF VF IR IR IR V(BR) CD ηR trr trr 45 8 4 100 4 Min 0.62 0.86 0.93 Typ Max 0.72 1 1 25 50 5 Unit V V V nA μA μA V pF % ns ns Characteristics (Tj=25℃ unless otherwise specified) Forward current: IF(mA) Forward voltage: VF(V) Forward current: IF(mA) Forward voltage: VF(V) Figure 1. Forward current vs. forward voltage Figure 2. Forward current vs. forward voltage TIGER ELECTRONIC CO.,LTD LL4148/LL4448 Reverse leakage current: IR(nA) Reverse voltage: VR(V) Diode capacitance: CD(pF) Reverse voltage: VR(V) Figure 3. Reverse current vs. reverse voltage Figure 4. Diode capacitance vs. reverse voltage Dimensions in mm Cathode identification 0.3 3.5±0.2 Glass Case Mini Melf / SOD 80 JEDEC DO 213 AA Φ1.5±0.1