MCK100-8

TIGER ELECTRONIC CO.,LTD SOT-89 Plastic-Encapsulate Transistors MCK 100- 6，- 8 FEATURES SOT-89 Silicon Planar PNPN Thyristor 1.KATHODE Current-IGT : 200 μA ITRMS : VDRM : 0.8 A MCK100-6：400 V MCK100-8：600 V Operating and storage junction temperature range TJ，Tstg : -55℃ to +150℃ 2.ANODE 3.GATE ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter On state voltage * Symbol VTM VGT unless Test otherwise conditions ITM=1A VAK=7V specified） MIN MAX 1.7 0.8 UNIT V V Gate trigger voltage Peak Repetitive forward and reverse blocking voltage MCK100-6 MCK100-8 Peak forward or reverse blocking Current Holding current VDRM AND IDRM= 10 μA ,VMAX=1010 V 400 600 V VRRM IDRM IRRM IH A2 A1 VAK= Rated VDRM or VRRM IHL= 20 mA , Av = 7V 10 µA 5 5 15 15 30 mA µA µA Gate trigger current IGT A VAK=7V 30 80 µA B 80 200 µA * Forward current applied for 1 ms maximum duration，duty cycle≤1%。 Typical Characteristics MCK100-6,-8