0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
MMBT5401LT1

MMBT5401LT1

  • 厂商:

    TGS

  • 封装:

  • 描述:

    MMBT5401LT1 - PNP EPITAXIAL PLANAR TRANSISTOR - Tiger Electronic Co.,Ltd

  • 数据手册
  • 价格&库存
MMBT5401LT1 数据手册
TIGER ELECTRONIC CO.,LTD MMBT5401LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. Features • High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) • Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature .............................................................................................. -55~+150 °C Junction Temperature ..................................................................................... +150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... 160 V VCEO Collector to Emitter Voltage .................................................................................... 150 V VEBO Emitter to Base Voltage .............................................................................................. 5 V IC Collector Current ......................................................................................................... 500mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob Min. 160 150 5 50 60 50 100 Typ. Max. 50 200 500 1 1 240 300 6 Unit V V V nA mV mV V V Test Conditions IC=100uA IC=1mA IE=10uA VCB=120V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA VCE=10V, IC=10mA, f=100MHz VCB=10V, f=1MHZ MHz pF TIGER ELECTRONIC CO.,LTD TIGER ELECTRONIC CO.,LTD Characteristics Curve Current Gain & Collector Current 1000 10000 Saturation Voltage & Collector Current Saturation Voltage (mV) 100 VCE=3V 1000 VBE(sat) @ IC=10IB hFE 10 100 VCE(sat) @ IC=10IB 1 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) Capacitance & Reverse-Biased Voltage 100 1000 Cutoff Frequency & Collector Current Cutoff Frequency (MHz) Capacitance (pF) VCE=10V 100 10 ` Cob 1 0.1 1 10 100 10 1 10 100 Reverse Biased Voltage (V) Collector Current (mA) TIGER ELECTRONIC CO.,LTD TIGER ELECTRONIC CO.,LTD SOT-23 Dimension Marking : L A 3 B 1 2 S 2L V G 3-Lead SOT-23 Plastic Surface Mounted Package C D K Style : Pin 1.Base 2.Emitter 3.Collector *:Typical H J DIM A B C D G H Inches Min. Max. 0.1102 0.118 0.0550 0.0630 0.0354 0.0512 0.0118 0.0197 0.0669 0.0910 0.0040 Millimeters Min. Max. 2.80 3.00 1.40 1.60 0.90 1.30 0.30 0.50 1.70 2.30 0.10 DIM J K L S V Inches Min. Max. 0.0035 0.0043 0.0128 0.0266 0.0335 0.0453 0.0886 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.09 0.11 0.32 0.67 0.85 1.15 2.25 2.75 0.25 0.65 TIGER ELECTRONIC CO.,LTD
MMBT5401LT1 价格&库存

很抱歉,暂时无法提供与“MMBT5401LT1”相匹配的价格&库存,您可以联系我们找货

免费人工找货
MMBT5401LT1G
  •  国内价格
  • 20+0.18239
  • 200+0.17039
  • 500+0.15839
  • 1000+0.14639
  • 3000+0.14039
  • 6000+0.13199

库存:1103