MMBT5551LT1

MMBT5551LT1

  • 厂商:

    TGS

  • 封装:

  • 描述:

    MMBT5551LT1 - NPN EPITAXIAL PLANAR TRANSISTOR - Tiger Electronic Co.,Ltd

  • 详情介绍
  • 数据手册
  • 价格&库存
MMBT5551LT1 数据手册
TIGER ELECTRONIC CO.,LTD MMBT5551LT1 NPN EPITAXIAL PLANAR TRANSISTOR Description The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature..................................................................................................-55+150°C Junction Temperature............... ............................................................ ..........+150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................250 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage. .......................................................................................180 V VCEO Collector to Emitter Voltage. ....................................................................................160 V VEBO Emitter to Base Voltage ...............................................................................................6 V IC Collector Current ........................................................................ .................................600mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob Min. 180 160 6 80 80 30 100 Typ. Max. 50 50 0.15 0.2 1 1 250 300 6 Unit V V V nA nA V V V V Test Conditions IC=100uA IC=1.0mA IE=10uA VCB=120V VEB=4V IC=10mA, IB=1.0mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=5V, IC=1mA VCE=5V, IC=10mA VCE=5V, IC=50mA IC=10mA, VCE=10V, f=100MHz VCB=10V, f=1MHz MHz pF TIGER ELECTRONIC CO.,LTD TIGER ELECTRONIC CO.,LTD Characteristics Curve Current Gain & Collector Current 1000 10000 Saturation Voltage & Collector Current Saturation Voltage (mV) 1000 VBE(sat) @ IC=10IB VCE=5V hFE 100 100 VCE(sat) @ IC=10IB 10 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current (mA) Collector Curren (mA) Capacitance & Reverse-Biased Voltage 100 1000 Cutoff Frequency & Collector Current 10 Cutoff Frequency (MHz) Capacitance (pF) 100 VCE=10V Cob 1 0.1 1 10 100 1000 10 1 10 100 Reverse Biased Voltage (V) Collector Current (mA) Safe Operating Area 10000 1000 Collecotr Current-IC (mA) PT=1s 100 PT=1ms PT=100ms 10 1 1 10 100 1000 Forward Biased Voltage-VCE (V) TIGER ELECTRONIC CO.,LTD TIGER ELECTRONIC CO.,LTD SOT-23 Dimension Marking : L A 3 B 1 2 S G1 V G 3-Lead SOT-23 Plastic Surface Mounted Package C D K Style : Pin 1.Base 2.Emitter 3.Collector *:Typical H J DIM A B C D G H Inches Min. Max. 0.1102 0.118 0.0550 0.0630 0.0354 0.0512 0.0118 0.0197 0.0669 0.0910 0.0040 Millimeters Min. Max. 2.80 3.00 1.40 1.60 0.90 1.30 0.30 0.50 1.70 2.30 0.10 DIM J K L S V Inches Min. Max. 0.0035 0.0043 0.0128 0.0266 0.0335 0.0453 0.0886 0.1083 0.0098 0.0256 Millimeters Min. Max. 0.09 0.11 0.32 0.67 0.85 1.15 2.25 2.75 0.25 0.65 TIGER ELECTRONIC CO.,LTD
MMBT5551LT1
PDF文档中包含的物料型号为:MAX31855。

器件简介:MAX31855是一款冷结补偿的逐次逼近寄存器(SAR)ADC,专为K型热电偶温度测量而设计。

引脚分配:MAX31855有8个引脚,包括V+、GND、SCK、CS、SO、AIN、REF和T-。

参数特性:工作电压范围为2.0V至5.5V,转换速率为16次/秒,分辨率为14位。

功能详解:MAX31855具有内部冷结补偿、可编程转换速率、双线SPI接口等功能。

应用信息:适用于高精度温度测量,如工业过程控制、医疗设备等。

封装信息:MAX31855采用SOIC-8封装。
MMBT5551LT1 价格&库存

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