MPSA06

TIGER ELECTRONIC CO.,LTD MPSA06 TO-92 Transistor (NPN) 1. 2. EMITTER BASE TO-92 3. COLLECTOR Features Power amplifier MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg RθJA Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Thermal Resistance,Junction to Ambient Value 80 80 4 0.5 625 150 -55-150 417 Units V V V A mW ℃ ℃ ℃/W Dimensions in inches and (millimeters) ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE1 DC current gain hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT VCE=1V, IC= 10mA IC=100mA, IB=10mA IC= 100mA, IB=10mA VCE=2V, IC= 10mA f = 100MHz 100 100 0.25 1.2 V V MHz Test conditions MIN 80 80 4 0.1 0.1 0.1 100 400 MAX UNIT V V V μA μA μA IC=100μA, IE=0 IC= 1mA , IB=0 IE=100μA, IC=0 VCB=80V, IE=0 VCE=60V, IB=0 VEB=3V, IC=0 VCE=1V, IC= 100mA MPSA06 TO-92 Transistor (NPN) Typical Characteristics MPSA06 TO-92 Transistor (NPN)