MPSA42

TIGER ELECTRONIC CO.,LTD MPSA42 NPN EPITACIAL PLANAR TRANSISTOR Description The A42 is high voltage transistor. Features • High Collector-Emitter Breakdown Voltage • Low Collector-Emitter Saturation Voltage. • For Complementary Use with PNP Type A92. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ............................................................................................... -55~+150°C Junction Temperature ..................................................................................... +150°C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 625 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... 300 V VCEO Collector to Emitter Voltage .................................................................................... 300 V VEBO Emitter to Base Voltage .............................................................................................. 6 V IC Collector Current ........................................................................................................ 500 mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 hFE3 fT Cob Min. 300 300 6 25 40 40 50 Typ. Max. 100 100 350 900 3 Unit V V V nA nA mV mV Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=260V, IE=0 VEB=6V, IC=0 IC=20mA, IB=2mA IC=20mA, IB=2mA IC=1mA, VCE=10V IC=10mA, VCE=10V IC=30mA, VCE=10V IC=10mA, VCE=20V, f=100MHZ VCB=20V, f=1MHz, IE=0 MHz pF Classification Of Rank Rank NS N hFE1 >80 >25 hFE2 >120 >40 hFE3 >120 >40 VCE(sat)