SS8550

TIGER ELECTRONIC CO.,LTD TO-92 Plastic-Encapsulate Transistors SS8550 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation PC : 1 W (Ta=25 ℃) 1. EMITTER 2. BASE 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Junction Temperature Storage Temperature Value -40 -25 -5 -1.5 150 -55-150 Unit V V V A ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Out capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) VBE(on) Cob fT Test conditions Min -40 -25 -5 -0.1 -0.1 -0.1 85 40 -0.5 -1.2 -1 20 100 V V V pF MHz 400 Typ Max Unit V V V μA μA uA IC=-100uA, IE=0 IC=-0.1mA, IB=0 IE=-100μA, IC=0 VCB=-40V, IE=0 VCE=-20V, IE=0 VEB=-5V, IC=0 VCE=-1V, IC=-100mA VCE=-1V, IC=-800mA IC=-800mA, IB=-80mA IC=-800mA, IB=-80mA VCE=-1V, IC=-10mA VCB=-10V, IE=0mA,f=1MHZ VCE=-10V, IC=-50mA,f=30MHZ CLASSIFICATION OF hFE(2) Rank Range B 85-160 C 120-200 D 160-300 D3 300-400 B,Sep,2011 Typical Characteristics -250 SS8550 hFE —— IC Ta=100℃ Static Characteristic COMMON EMITTER Ta=25℃ -1.0mA -0.9mA hFE -0.8mA -0.7mA 1000 (mA) -200 300 IC COLLECTOR CURRENT -0.6mA -0.5mA DC CURRENT GAIN -150 Ta=25℃ 100 -100 -0.4mA -0.3mA -50 -0.2mA IB=-0.1mA 30 -0 -0 -1 -2 -3 10 -1 -3 -10 -30 -100 COMMON EMITTER VCE=-1V -300 -1000-1500 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) -1000 VCEsat β=10 —— IC -1.2 VBEsat β=10 —— IC COLLECTOR-EMMITTER SATURATION VOLTAGE VCEsat (mV) -100 BASE-EMMITTER SATURATION VOLTAGE VBEsat (V) -300 -1.0 -0.8 Ta=25℃ -0.6 -30 Ta=100℃ Ta=25℃ Ta=100℃ -10 -0.4 -3 -1 -1 -3 -10 -30 -100 -300 -1000-1500 -0.2 -1 -3 -10 -30 -100 -300 -1000-1500 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) -1500 -1000 IC COMMON EMITTER VCE=-1V —— VBE 100 Cob/ Cib —— VCB/ VEB f=1MHz IE=0/IC=0 Ta=25℃ (mA) -300 (pF) IC COLLECTOR CURRENT CAPACITANCE C -100 Ta=25℃ Cib -30 30 Ta=100℃ -10 Cob -3 -1 -0.2 -0.4 -0.6 -0.8 -1.0 10 -0.1 -0.3 -1 -3 -10 -20 BASE-EMITTER VOLTAGE VBE (V) REVERSE BIAS VOLTAGE V (V) 1000 fT COMMON EMITTER VCE= -10V —— IC 1.2 PC —— Ta COLLECTOR POWER DISSIPATION PC (W) -10 -30 -100 (MHz) Ta=25℃ 300 1.0 0.8 TRANSITION FREQUENCY fT 100 0.6 0.4 30 0.2 10 -2 -6 0.0 0 25 50 75 100 125 150 COLLECTOR CURRENT IC (mA) AMBIENT TEMPERATURE Ta (℃ ) B,Sep,2011