STN1A60

TIGER ELECTRONIC CO.,LTD Silicon Bidirectional Triode Thyristors GENERAL DESCRIPTION Designed for use in solid state relays, MPU interface, TTL logic and any other light industrial or consumer application. Supplied in an inexpensive TO - 92 package which is readily adaptable for use in automatic insertion equipment. STN1A60/80 Parameter Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current Max. Operating Junction Temperature Storage Temperature Symbol VDRM VRRM IT(RMS) ITSM Tj Tstg Typ STN1A60 STN1A80 Unit V A A o 600 1.0 10 110 800 C C -45~150 o Parameter Repetitive peak off-state voltage s RMS on-state current On-state voltage Holding current T2+G+ Gate trigger current T2+GT2-GT2-G+ Gate trigger voltage Symbol VDRM VRRM IT(RMS) VT IH Test Conditions Min — Typ STN1A60 STN1A80 Max — — 1.60 5 5.0 5.0 5.0 12 1.8 Unit V A V mA 600 1.0 — — — — — — 0.5 800 all conduction angles IT=1.5 A VD =12 V; IGT=10 mA — — — — IGT VD =6.0 V; RL= 10Ω — — — mA VGT VD =6.0 V; RL= 10Ω — V