TBA820M

TIGER ELECTRONIC CO.,LTD TBA820M 1 .2W A UDIO P OWER A MPLIFIER G ENERAL D ESCRIPTION T he T BA 820 M i s a monolithic integrated circuit in 8 lead d ual in -line plastic packag e. It is intended for use a slow frequency class B power amplifier in portable c assette players and radios. T BA 820 M F EAT URES W i de rang e of sup p l y v olta ge : V cc=3V~ 16V i n p ortable ra dios, c a sset t e recorder s and playe r s etc. M ain features are : m i nim u m w orking suppl y v oltage o f 3 V L ow quiescent supply c urrent ( Icc=4m A , t y pical) G ood r ipple r ejection L ow num ber of external com ponents N o crossover distortion L ow power dissipation O utput Power : Po=2W a t 12V/8 Ω , 1 .6W a t 9V/4 Ω a nd 1.2W a t 9V/8 Ω O utline D rawing BLOCK DIAGRAM PIN CONNECTION Ripple Bootstrap Vcc OUTPUT 8 7 + 6 5 Frequency Compensation Gain Setting Input Ground 1 2 TBA820M 8 7 6 5 Ripple Rejection Bootstrap Supply Voltage Output 3 4 1 CB 2 NF 3 INPUT 4 GND TBA820M A BSOLUTE MAXIMUM RATINGS C haracteristics S upply Voltage P eak Output Current P ower Dissipation(at Tamb =50 ° C) O perating Temperature S torage Temperature S ymbol V cc I pk PD Topr Tstg Value 16 1 .5 1 .25 - 20~70 - 40~150 U nit V A W °C °C T HERMAL DATA C haracteristics T hermal resistance junction-ambient S ymbol R th(j-a) Value 1 00 U nit ° C/W E LECTRICAL CHARACTERISTICS ( Unless otherwise specified Vcc=9V,Tamb=25 ° C) C haracteristic Supply Voltage Q uiescent Output Voltage(pin 5) Q uiescent Drain Current B ias current (pin 3) S ymbol V cc Vo Id Ib V cc=12V;R L =8 Ω V cc=9V;R L =4 Ω T HD=10% V cc=9V;R L =8 Ω f=1kHz V cc=6V;R L =4 Ω Rf=120 Ω V cc=3.5V;R L =4 Ω V cc=3V;R L =4 Ω P o=1.2W f =1kHz I nput sensitivity V i(rms) R L =8 Ω R f=33 Ω R f=120 Ω R f=33 Ω R f=120 Ω C B =680pF C B =220pF 0 .9 Test Condition M in. Typ. M ax. Unit 3 4 4 .5 4 0 .1 2 1 .6 1 .2 0 .75 0 .25 0 .2 16 60 3 .5 12 5 25 to 7000 25 to 20000 mV mV MΩ Hz W 16 5 12 V V mA µA O utput Power Po P o=50mW R L =8 Ω f =1kHz f =1kHz R L =8 Ω R f=120 Ω C 5=1000 µ F I nput resistance(pin 3) F requency response (-3dB) Ri B TBA820M E LECTRICAL C HARACTERISTIVCS ( Unless otherwise specified Characteristic Distortion Vo ltage Gain ( open loop) Vo ltage Gain ( closed loop) I nput noise Vo ltage I nput noise current S ignal to noise ratio (*) S upply v oltage rejection ( test circuit of 2) ( *) B(-3dB)=25~20000Hz V cc=9V,Tam b=25 ° C) Te st C o n d i t i o n P o=500 m W R L =8 Ω f =1kHz R L =8 Ω R L =8 Ω f =1kHz R f=33 Ω f =1kHz R f=120 Ω Rf=33 Ω R f=120 Ω C ontinue M in . Ty p . M a x . Unit 0.8 % 0.4 75 45 dB 34 3 0.4 80 dB 70 42 dB µA nA dB S y m bol THD Gv Gv VN IN S +N/N S VR V cc=9V,B(-3dB)=25~20000Hz V cc=9V,B(-3dB)=25~20000Hz Po=1.2W G v=34dB R L =8 Ω R 1=10k Ω R 1=50k Ω R L =8 Ω f (ripple)=100Hz C 6=47 µ F Rf=120 Ω T EST C IRCUIT 1 . Cir c uit diagram w i th load connected to the supply voltage 47uF/10V 0.1uF Vcc RL C2 100uF/15V Vi C6 C4 6 3 2 8 7 TBA820M 1 5 CB C5 R2 1 220uF/15V C3 0.22uF 4 100uF/6V R1 10K Rf C1 TBA820M 2 . Cir c uit diagram w i th load connected to gr ound C2 100uF/15V Vi 3 2 R1 10K 4 100uF/6V Rf C1 C6 6 7 TBA820M C4 0.1uF R3 56 Vcc CB 1 85 R2 1 C3 0.22uF C7 100uF/15V C5 220uF/15V RL C HARACTERISTICS CUR VES 47uF/10V TBA820M