T14L256A-8P

tm TE CH T14L256A SRAM FEATURES • High speed access time: 8/10/12/15ns(max.) • Low power consumption : Active 300 mW (typ.) • Single + 3.3 power supply • Fully static operation – No clock or refreshing required • All inputs and outputs directly LVTTL compatible • Common I/O capability • Available packages :28-pin 300 mil, SOJ and TSOP-I (forward type). • Output enable (OE ) available for very fast access 32K X 8 HIGH SPEED CMOS STATIC RAM GENERAL DESCRIPTION The T14L256A is a high speed, low power CMOS static RAM organized as 32,768 x 8 bits that operates on a single 3.3-volt power supply. This device is packaged in a standard 28-pin 300 mil SOJ or TSOP-I forward. BLOCK DIAGRAM Vcc → VSS → A0 . . . A 14 CS OE WE CONTROL DATA I/O I/O 1 . . . I/O 8 DECODER CORE ARRAY PIN CONFIGURATION A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 Vcc WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 SOJ 22 21 20 19 18 17 16 15 PIN DESCRIPTION SYMBOL A0 - A14 I/O1 - I/O8 CS WE OE 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 V cc Vss DESCRIPTION Address Inputs Data Inputs/Outputs Chip Select Inputs Write Enable Output Enable Power Supply Ground TSOP-I PART NUMBER EXAMPLES T14L256A-8J T14L256A-8P PACKAGE SPEED SOJ 8ns TSOP-I 8ns Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. P. 1 Publication Date: APR. 2001 Revision: E tm TE CH T14L256A DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage to Vss Potential Inputs to Vss Potential Power Dissipation Storage Temperature RATING -0.5 to + 4.6 -0.5 to Vcc +0.5 1.0 -60 to +150 UNIT V V W °C RECOMMENDED OPERATING CONDITIONS PARAMETER Supply Voltage Input Voltage, low Input Voltage, high Ambient Temperature SYM Vcc MIN Typ-5% -0.3 2.1 0 TYP 3.3 MAX Typ+5% 0.8 Vcc+0.3 70 UNIT V V V °C VIL VIH TA TRUTH TABLE CS H L L L OE X H L X WE X H H L MODE Not Selected Output Disable R ead Write I/O1- I/O8 High-Z High-Z Data Out Data In Vcc ISB, I SB1 Icc Icc Icc OPERATING CHARACTERISTICS (Vcc = 3.3V ± 5%, Vss = 0V, Ta = 0 to 70 ° C) PARAMETER Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage Operating Power Supply Current Standby Power Supply Current SYM.  I LI I LO  TEST CONDITIONS Vin=Vss to Vcc VI/O=Vss to Vcc , OE = CS = VIH or MIN. -10 -10 2.4 - TYP. - MAX. UNIT +10 uA +10 uA 0.4 110 100 90 80 15 2 V V mA mA mA mA mA mA VIH or WE = V IL VOL VOH Icc ISB I SB1 8 10 Cycle = MIN. 12 Duty = 100% 15 CS = VIH , Cycle=MIN, Duty=100% I OL = + 8.0mA I OH = - 4.0mA C S = VIL, I/O=0mA CS ≥ Vcc -0.2V Note: Typical characteristics are at Vcc = 3.3V, Ta = 25 °C Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. P. 2 Publication Date: APR. 2001 Revision: E tm TE CH T14L256A CAPACITANCE (Vcc = 3.3V, Ta = 25° C, f = 1 MHz) PARAMETER Input Capacitance Input/ Output Capacitance SYMBOL CONDITION VIN = 0V VOUT= 0V MAX. 6 8 UNIT pF pF CIN CI / O Note: These parameters are sampled but not 100% tested. AC TEST CONDITIONS PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load CONDITIONS 0V to 3V 3 ns 1.5V C L =30pF,I OH / I OL = -4mA/8mA AC TEST LOADS AND WAVEFORM R1 320 ohm 3.3V OUTPUT 30pF Including Jig and Scope R2 350 ohm 5pF Including Jig and Scope R2 350 ohm R1 320 ohm 3.3V OUTPUT (For TCLZ, TOLZ, TCHZ, TOHZ, TWHZ , TOW ) 3.0V 0V 3ns 90% 10% 10% 90% 3ns Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. P. 3 Publication Date: APR. 2001 Revision: E tm TE CH T14L256A AC CHARACTERISTICS (Vcc =3.3V ± 5%, Vss = 0V, Ta = 0 to 70°C) (1) READ CYCLE T 14L256A-8 T14L256A-10 T14L256A-12 T14L256A-1 UNIT PARAMETER Read Cycle Time Address Access Time Chip Select Access Time Output Enable to Output Valid Chip Selection to Output in Low Z Output Enable to Output in Low Z Chip Deselection to Output in High Z Output Disable to Output in High Z Output Hold from Address Change SYM. MIN. MAX. MIN. MAX. MIN. MAX. 5 MIN. MAX. tRC tAA tACS tAOE tCLZ* tOLZ tCHZ* tOHZ tOH 8 3 0 2.5 8 8 5 4 4 - 10 3 0 3 10 10 6 5 5 - 12 3 0 3 12 12 7 6 6 - 15 3 0 0 0 3 15 15 7 7 7 - ns ns ns ns ns ns ns ns ns * These parameters are sampled but not 100% tested. (2)WRITE CYCLE PARAMETER Write Cycle Time Chip Selection to End of Write Address Valid to End of Write Address Setup Time Write Pulse Width Write Recovery Time Data Valid to End of Write Data Hold from End of Write Write to Output in High Z Output Disable to Output in High Z Output Active from End of Write SYM. T 14L256A-8 T14L256A-10 T14L256A-12 T14L256A-15 M IN. MAX. MIN. MAX. M IN. MAX. MIN. MAX. UNIT ns ns ns ns ns ns ns ns ns ns ns tWC tCW tAW tAS tWP tWR tDW tDH tWHZ tOHZ tOW 8 6 6 0 6 0 5 0 0 4 4 - 10 8 8 0 8 0 6 0 0 5 5 - 12 10 10 0 10 0 8 0 0 6 6 - 15 11 11 0 11 0 8 0 0 6 7 - * These parameters are sampled but not 100% tested. Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. P. 4 Publication Date: APR. 2001 Revision: E tm (Address TE CH T14L256A TIMING WAVEFORMS READ CYCLE 1 Controlled) tR C A ddre ss t tO H AA t OH DOUT READ CYCLE 2 (Chip Select CS tA C S t CLZ tC H Z Controlled) DOUT READ CYCLE 3 (Output Enable Controlled) t RC A dd re ss t AA OE t A OE t OL Z t OH CS t ACS t OH Z t CLZ tC H Z DOUT DON 'T CAR E UN DEF IN ED Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. P. 5 Publication Date: APR. 2001 Revision: E tm Addres s TE CH T14L256A WRITE CYCLE 1 ( OE CLOCK) t WC t WR OE t CW CS t AW tW P WE t t AS O HZ (1, 4) D OU T t DW t DH DI N WRITE CYCLE 2 ( OE = V IL Fixed) t WC Ad dres s t CW t WR CS t AW t WP WE t AS t t WH Z ( 1,4 ) t OW OH ( 2) (3 ) DOU T t DW t DH DIN D ON 'T CAR E U N DE F INE D Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. P. 6 Publication Date: APR. 2001 Revision: E tm TE CH T14L256A Notes: 1. During this period, I/O pins are in the output state, so input signals of opposite phase to the outputs should not be applied. 2. The data output from D OUT are the same as the data written to D IN during the write cycle. 3. D OUT provides the read data for the next address. 4. Transition is measured ± 500 mV from steady state with CL = 5pF. guaranteed but not 100% tested. This parameter is 5. If OE is low during a WE controlled write cycle, the write pulse width must be the larger of tWP or (t WHZ + t DW) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW . If O E is high during a W E controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified t WP . Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. P. 7 Publication Date: APR. 2001 Revision: E tm TE CH T14L256A PACKAGE DIMENSIONS 28-LEAD SOJ SRAM (300 mil) SYMBOL A B C D E F G H I J K L M N O P Q y DIMENSIONS IN INCHES 0.710±0.002 0.300±0.005 0.060±0.002 0.050±0.001 0.063±0.001 0.015±0.002 0.030±0.002 0.050±0.002 0.018±0.002 0.028±0.002 0.337±0.002 0.010±0.001 0.026±0.002 0.268±0.003 0.300±0.002 0.053±0.001 0.140±0.004 0.004(MAX) DIMENSIONS IN MM 18.03±0.05 7.62±0.13 1.52±0.05 1.27±0.03 1.63±0.03 0.38±0.05 0.76±0.05 1.27±0.05 0.46±0.05 0.71±0.05 8.56±0.05 0.25±0.03 0.66±0.05 6.81±0.08 7.62±0.05 1.35±0.03 3.56±0.10 0.10(MAX) Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. P. 8 Publication Date: APR. 2001 Revision: E tm TE CH T14L256A PACKAGE DIMENSIONS 28-LEAD TSOP-I SRAM (8X13.4mm) D C 1 28 b E e 14 15 A2 "A" A A1 Seating plane y Db Gauge plane Seating plane L 0.010 Detail "A" L1 SYMBOL A A1 A2 b c Db E e D L L1 y θ DIMENSIONS IN INCHES 0.047(max.) 0.004 ±0.002 0.039 ±0.002 0.008(typ.) 0.006(typ.) 0.465 ±0.004 0.315 ±0.004 0.022(typ.) 0.528 ±0.008 0.020 ±0.004 0.0315±0.004 0.004(max.) 0° ~5 ° P. 9 DIMENSIONS IN MM 1.20(max.) 0.10±0.05 1.00±0.05 0.20(typ.) 0.15(typ.) 11.80± 0.10 8.00±0.10 0.55(typ.) 13.40± 0.20 0.50±0.10 0.80±0.10 0.10(max.) 0 ° ~5° Publication Date: APR. 2001 Revision: E Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice.