T15V256A-85R

tm TE CH T15V256A SRAM FEATURES • High speed access time: 50/70/85/100ns • Power supply current : Operating :35mA(max) Standby : 5uA • Power supply : 2.4V to 3.6V • Fully static operation – No clock or refreshing required • All inputs and outputs directly LVTTL compatible • Common I/O capability • Data retention voltage : 1.5V (min) • Available packages :28-pin SOP ,TSOP-I (8x13.4mm forward type and reverse type). • Operating temperature : 0 ~ +70 °C -40 ~ +85 °C 32K X 8 LOW POWER CMOS STATIC RAM GENERAL DESCRIPTION The T15V256A is a low power and low voltage CMOS static RAM. organized as 32,768 x 8 bits that operates on a 2.4V to 3.6V power supply. Data retention is guaranteed at a power supply voltage as low as 1.5V. This device is packaged in a standard 28-pin SOP or TSOP-I forward and reverse type. BLOCK DIAGRAM Vcc → Vss → A0 → A14 → . . . DECODER CORE ARRAY PART NUMBER EXAMPLES PART NO. T15V256A-70D T15V256A-85P T15V256A-85R T15V256A-70DI T15V256A-85PI T15V256A-85RI PACKAGE CODE D=SOP P= TSOP-I(Forward) R= TSOP-I(Reverse) D=SOP P= TSOP-I(Forward) R= TSOP-I(Reverse) -40 ~ +85 °C 0 ~ +70 °C Operating Temperature CS → OE → CONTROL WE → ← I / O1 DATA I/O ← I / O8 . . TM Technology Inc. reserves the right P. 1 to change products or specifications without notice. Publication Date: JUL. 2003 Revision:B tm A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 5 6 7 8 9 10 11 12 13 14 TE CH T15V256A PIN CONFIGURATION (Top View) 28 27 26 25 24 23 Vcc WE A13 A8 A9 A11 OE A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 SOP 22 21 20 19 18 17 16 15 OE A11 A9 A8 A13 WE VCC A14 A12 A7 A6 A5 A4 A3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 TSOP-I Forward 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A10 CS I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 A4 A5 A6 A7 A12 A14 VCC WE A13 A8 A9 A11 OE 1 2 3 4 5 6 7 8 9 10 11 12 13 14 TSOP-I Reverse 28 27 26 25 24 23 22 21 20 19 18 17 16 15 A2 A1 A0 I/O1 I/O2 I/O3 VSS I/O4 I/O5 I/O6 I/O7 I/O8 CS A10 PIN DESCRIPTION SYMBOL A0 - A14 I/O1 - I/O8 CS WE OE Vcc Vss DESCRIPTION Address Inputs Data Inputs/Outputs Chip Select Inputs Write Enable Output Enable Power Supply Ground TM Technology Inc. reserves the right P. 2 to change products or specifications without notice. Publication Date: JUL. 2003 Revision:B tm TE CH T15V256A DC CHARACTERISTICS ABSOLUTE MAXIMUM RATINGS PARAMETER Supply Voltage to Vss Potential Inputs to Vss Potential Power Dissipation Storage Temperature RATING -0.5 to + 4.6 -0.5 to Vcc +0.5 0.7 -60 to +150 UNIT V V W °C RECOMMENDED OPERATING CONDITIONS PARAMETER Supply Voltage Input Voltage, low Input Voltage, high Ambient Temperature SYM Vcc MIN 2.4 -0.3 0.7Vcc 0/-40 TYP MAX 3.6 0.6 Vcc+0.3 +75/+85 UNIT V V V °C VIL VIH TA TRUTH TABLE CS H L L L OE X H L X WE X H H L MODE Not Selected Output Disable Read Write I/O1- I/O8 High-Z High-Z Data Out Data In Power Standby Active Active Active OPERATING CHARACTERISTICS (Vcc = 2.4V to 3.6V, Vss = 0V, Ta = 0 ~ +70 °C /-40 to 85°C) PARAMETER Input Leakage Current Output Leakage Current Output Low Voltage Output High Voltage Operating Power Supply Current Standby Power Supply Current SYM. TEST CONDITIONS Vin=Vss to Vcc VI/O=Vss to Vcc , CS = VIH or OE = I LI I LO VOL VOH Icc MIN. TYP. MAX. UNIT 1 µA 2.1 1 0.4 35 30 25 20 0.3 5 µA V V mA mA mA mA mA uA VIH or WE = VIL I OL = + 2.1mA I OH = - 1.0mA CS = VIL , I/O=0mA Cycle = MIN. Duty = 100% -50 -70 -85 -100 I SB I SB1 CS = VIH , Cycle=min, Duty=100% CS ≥ Vcc -0.2V TM Technology Inc. reserves the right P. 3 to change products or specifications without notice. Publication Date: JUL. 2003 Revision:B tm TE CH T15V256A CAPACITANCE (Vcc = 2.4V to 3.6V, Ta = 25°C, f = 1 MHz) PARAMETER Input Capacitance Input/ Output Capacitance SYMBOL CONDITION VIN = 0V VOUT = 0V MAX. 6 8 UNIT pF pF C IN C I/O Note: These parameters are sampled but not 100% tested. AC TEST CONDITIONS PARAMETER Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Level Output Load 0.6V to 0.7Vcc 3 ns 1.4V See Fig. 1,2 CONDITIONS AC TEST LOADS AND WAVEFORM 3.0V OUTPUT R1 - 1210 ohm 3.0V OUTPUT R1- 1210 ohm 30pF Including Jig and Scope R2 1380 ohm 5pF Including Jig and Scope R2 1380 ohm (For TCLZ, TOLZ, TCHZ, TOHZ, TWHZ, TOW ) Fig 1 Fig 2 TM Technology Inc. reserves the right P. 4 to change products or specifications without notice. Publication Date: JUL. 2003 Revision:B tm TE CH T15V256A AC CHARACTERISTICS ( Vcc =2.4V to 3.6V, Vss = 0V, Ta = 0 ~ +70 °C /-40 to 85°C) (1) READ CYCLE PARAMETER Read Cycle Time Address Access Time Chip Select Access Time Output Enable to Output Valid Chip Selection to Output in Low Z Output Enable to Output in Low Z Output Disable to Output in High Z Output Hold from Address Change SYM. -50ns MIN MAX -70ns MIN. MAX. -85ns -100ns UNIT MIN. MAX. MIN. MAX. tRC tAA tACS tAOE tCLZ* tOLZ* tOHZ* tOH 50 7 5 10 50 50 25 20 20 - 70 10 5 10 70 70 35 25 25 - 85 10 5 10 85 85 40 30 30 - 100 10 5 10 100 100 50 30 30 - ns ns ns ns ns ns ns ns ns Chip Deselection to Output in High Z tCHZ* * These parameters is measured with 5pF test load. (2)WRITE CYCLE PARAMETER Write Cycle Time Chip Selection to End of Write Address Valid to End of Write Address Setup Time Write Pulse Width Write Recovery Time Data Valid to End of Write Data Hold from End of Write Write to Output in High Z Output Active from End of Write SYM. -50ns MIN -70ns -85ns -100ns UNIT ns ns ns ns ns ns ns ns ns ns MAX MIN. MAX. MIN. MAX. MIN. MAX. tWC tCW tAW tAS tWP tWR tDW tDH tWHZ* tOW 50 40 40 0 30 0 25 0 5 20 - 70 60 60 0 50 0 30 0 5 25 - 85 70 70 0 60 0 35 0 5 30 - 100 80 80 0 70 0 40 0 5 30 - * These parameters is measured with 5pF test load. TM Technology Inc. reserves the right P. 5 to change products or specifications without notice. Publication Date: JUL. 2003 Revision:B tm TE CH T15V256A Symbol VDR IDR Test Condition CS ≥ Vcc -0.2V Vcc =3.0, CS ≥ Vcc -0.2V DATA RETENTION CHARACTERISTICS Item Vcc for data retention Data retention current Recovery time Min 1.5 0 5 Typ max 3.6 5 unit V uA ms Data retention set-up time tSDR tRDR See data retention waveform DATA RETENTION WAVE FORM D ata Retention M ode V CC V cc_typ t V D R > 1 .5V t Vcc_TYP SD R RD R CS CS >VCC-0.2V V IH V IH TM Technology Inc. reserves the right P. 6 to change products or specifications without notice. Publication Date: JUL. 2003 Revision:B tm TE CH T15V256A TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) tR C A d d re s s tA A tO H tO H DOUT READ CYCLE 2 (Chip Select Controlled) CS tA C S tC L Z tC H Z DOUT READ CYCLE 3 (Output Enable Controlled) tR C A d d re s s tA A OE tA O E tO L Z tO H CS tA C S tC L Z tO H Z tC H Z DOUT D ON' T CARE UNDEF INED TM Technology Inc. reserves the right P. 7 to change products or specifications without notice. Publication Date: JUL. 2003 Revision:B tm Ad d r es s TE CH ( OE CLOCK) tW C T15V256A WRITE CYCLE 1 t WR OE tC W CS t t AW WP WE t AS (1,4) tO H Z DOUT t DW t DH DIN WRITE CYCLE 2 ( OE = V IL Fixed) tW C A d d re s s tC W tW R CS tA W tW P WE tA S tW H Z (1 ,4 ) tO W tO H (2 ) (3 ) DOUT tD W tD H D IN D ON'T CARE UNDEF INED TM Technology Inc. reserves the right P. 8 to change products or specifications without notice. Publication Date: JUL. 2003 Revision:B tm TE CH T15V256A Notes: 1. During this period, I/O pins are in the output state, so input signals of opposite phase to the outputs should not be applied. 2. The data output from D OUT are the same as the data written to D IN during the write cycle. 3. D OUT provides the read data for the next address. 4. Transition is measured ± 500 mV from steady state with C L = 5pF. guaranteed but not 100% tested. This parameter is 5. If OE is low during a WE controlled write cycle, the write pulse width must be the larger of tWP or (tWHZ + tDW) to allow the I/O drivers to turn off and data to be placed on the bus for the required tDW. If OE is high during a WE controlled write cycle, this requirement does not apply and the write pulse can be as short as the specified tWP. TM Technology Inc. reserves the right P. 9 to change products or specifications without notice. Publication Date: JUL. 2003 Revision:B tm TE CH T15V256A PACKAGE DIMENSIONS 28-LEAD SOP e1 28 15 E HE Detail F 1 D A2 S y Seating Plane Dimension in inches min. typ. max 0.098 0.01 0.083 0.085 0.087 0.014 0.016 0.018 0.004 0.006 0.008 0.713 0.733 0.322 0.331 0.338 0.044 0.050 0.056 0.453 0.465 0.476 0.026 0.033 0.041 0.047 0.059 0.071 39 0.005 0° 10° Dimension in mm min. typ. max. 2.5 0.25 2.13 2.15 2.17 0.39 0.4 0.41 0.1 0.15 0.2 18.1 18.6 8.2 8.4 8.6 1.12 1.27 1.42 11.5 11.8 12.1 0.65 0.85 1.05 1.2 1.5 1.8 1.0 0.12 0° 10° e A1 See Detail F A LE b 14 L e1 C Symbol A A1 A2 b C D E e HE L LE S y θ Notes : 1. Dimensions D max. & S include mold flash or tie bar burrs. 2. Dimension b does not include dambar protrusion / intrusion. 3. Dimensions D & E include mold mismatch and determined at the mold parting line. 4. controlling dimension : inches 5. general appearance spec should be based on final visual inspection spec. TM Technology Inc. reserves the right P. 10 to change products or specifications without notice. Publication Date: JUL. 2003 Revision:B tm 1 TE CH T15V256A (8X13.4mm) PACKAGE DIMENSIONS 28-LEAD TSOP-I FORWARD AND REVERSE D C 28 b E e 14 15 A2 "A" A A1 Seating plane y Db Gauge plane Seating plane L 0.010 Detail "A" L1 SYMBOL A A1 A2 b c Db E e D L L1 y θ DIMENSIONS IN INCHES 0.047(max.) 0.004±0.002 0.039±0.002 0.008(typ.) 0.006(typ.) 0.465±0.004 0.315±0.004 0.022(typ.) 0.528±0.008 0.020±0.004 0.0315±0.004 0.004(max.) 0°~5° DIMENSIONS IN MM 1.20(max.) 0.10±0.05 1.00±0.05 0.20(typ.) 0.15(typ.) 11.80±0.10 8.00±0.10 0.55(typ.) 13.40±0.20 0.50±0.10 0.80±0.10 0.10(max.) 0°~5° TM Technology Inc. reserves the right P. 11 to change products or specifications without notice. Publication Date: JUL. 2003 Revision:B