T224162B-25

tm TE CH T224162B DRAM 256K x 16 DYNAMIC RAM EDO PAGE MODE FEATURES • Industry-standard x 16 pinouts and timing functions. • Single 5V (±10%) power supply. • All device pins are TTL- compatible. • 512-cycle refresh in 8ms. • Refresh modes: RAS only, CAS BEFORE R AS (CBR) and HIDDEN. • Extended data-out (EDO) PAGE MODE access cycle. • BYTE WRITE and BYTE READ access cycles. PIN ASSIGNMENT ( Top View ) Vcc I/01 I/02 I/03 I/04 Vcc I/05 I/06 I/07 I/08 1 2 3 4 5 6 7 8 9 10 TSOP(II) NC NC 11 12 13 14 15 16 17 18 19 20 30 29 28 27 26 25 24 23 22 21 NC CASL CASH OE A8 A7 A6 A5 A4 VSS 40 39 38 37 36 35 34 33 32 31 Vss I/016 I/015 I/014 I/013 Vss I/012 I/011 I/010 I/09 OPTION TIMING 22ns 25ns 28ns 35ns 45ns 50ns EDO 125 MHz 100 MHz 100 MHz 83 MHz 60 MHz 50 MHz MARKING J S MARKING -22 -25 -28 -35 -45 -50 WE RAS NC A0 A1 A2 A3 Vcc PACKAGE SOJ TSOP(II) GENERAL DESCRIPTION The T224162B is a randomly accessed solid state memory containing 4,194,304 bits organized in a x16 configuration. The T224162B has both BYTE WRITE and WORD WRITE access cycles via two CAS pins. It offers Fast Page mode with Extended Data Output. The T224162B C AS function and timing are determined by the first CAS to transition low and by the last to transition back high. Use only one of the two CAS and leave the other staying high during WRITE will result in a BYTE WRITE. C ASL transiting low in a WRITE cycle will write data into the lower byte (IO1~IO8), and CASH transiting low will write data into the upper byte (IO9~16). Taiwan Memory Technology, Inc. reserves the right P. 1 to change products or specifications without notice. Vcc I /01 I/02 I/03 I/04 Vcc I/05 I/06 I/07 I/08 NC NC WE RAS NC A0 A1 A2 A3 Vcc 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 SOJ 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 Vss I/016 I/015 I/014 I/013 Vss I/012 I/011 I/010 I/09 NC CASL CASH OE A8 A7 A6 A5 A4 VSS Publication Date: AUG. 2000 Revision:L tm TE CH T224162B FUNCTIONAL BLOCK DIAGRAM WE CASL CASH CAS CONTROL LOGIC DATA-IN BUFFER DQ01 16 . . DQ16 NO.2 CLOCK GENERATOR DATA-OUT BUFFER 9 COLUMN. ADDRESS BUFFER 9 COLUMN DECODER OE 16 A0 A1 A2 A3 A4 A5 A6 A7 A8 9 9 ROW DECODER ROW. ADDRESS BUFFERS(9) REFRESH COUNTER REFRESH CONTROLLER 512 8 SENSE AMPLIFIERS VO GATING 512 x 16 8 9 512 512 x 512 x 16 MEMORY ARRAY RAS NO.1 CLOCK GENERATOR Vcc Vss PIN DESCRIPTIONS PIN NO. 16~19,22~26 14 28 29 13 27 2~5,6~10,31~34,36~39 1,6,20 21,35,40 11,12,15,30 SYM. A0-A8 RAS C ASH TYPE Input Input Input Input Input Input Supply Ground Address Input DESCRIPTION Row Address Strobe Column Address Strobe /Upper Byte Control Column Address Strobe /Lower Byte Control Write Enable Output Enable Power, 5V Ground No Connect CASL WE OE I/O1 - I/O16 Vcc Vss NC Input/ Output Data Input/ Output Taiwan Memory Technology, Inc. reserves the right P. 2 to change products or specifications without notice. Publication Date:AUG. 2000 Revision:L tm 1.0W TE CH T224162B *Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. ABSOLUTE MAXIMUM RATINGS* Voltage on Any pin Relative to VSS..... -1V to +7V Operating Temperature, Ta (ambient) ..0°C to +70 °C Storage Temperature (plastic)........ -55°C to +150°C Power Dissipation ............................…........... Short Circuit Output Current.......…............... 50mA DC ELECTRICAL CHARACTERISTICS AND RECOMMENDED OPERATING CONDITIONS (0°C ≤ Ta ≤ 70°C; VCC = 5V ± 10 % unless otherwise noted) DESCRIPTION CONDITIONS Supply Voltage Supply Voltage Input High (Logic) voltage Input Low (Logic) voltage Input Leakage Current 0V ≤ VIN ≤ 7V 0V ≤ VOUT≤ 7V Output Leakage Current Output(s) disabled Output High Voltage IOH = -5 mA Output Low Voltage IOL = 4.2 mA N ote: 1.All Voltages referenced to Vss MAX DESCRIPTION Operating Current CONDITIONS SYM. -22 -25 -28 -35 -45 -50 UNITS NOTES tRC = min Icc1 190 180 170 150 130 110 mA 1,2 RAS , CAS cycling , TTL interface, R AS , CAS =VIH, DOUT=High-Z CMOS interface, R AS , C AS > V cc-0.2V RAS -only refresh Current Standby Current C AS Before RAS Refresh Current SYM. V cc Vss V IH V IL ILI ILO VOH VOL MIN 4.5 0 2.4 -1.0 -10 -10 2.4 0 MAX 5.5 0 Vcc+1 0.8 10 10 Vcc 0.4 UNITS V V V V uA uA V V NOTES 1 1 1 4 Icc2 2 4 2 4 2 4 2 4 2 4 2 mA mA 2 1 Standby Current tRC = min RAS =VIH, CAS =VIL tRC = min Icc3 190 180 170 150 130 110 mA Icc5 5 5 5 5 5 5 mA Icc6 190 180 170 150 130 110 mA Icc7 190 180 170 150 130 110 mA 1,3 EDO Page Mode Current tPC = min N ote: 1. Icc depends on output load condition when the device is selected. Icc max is specified at the output open condition. 2. Address can be changed twice or less while RAS = VIL. 3. Address can be changed once or less while C AS = VIH. Taiwan Memory Technology, Inc. reserves the right P. 3 to change products or specifications without notice. Publication Date: AUG. 2000 Revision:L tm TE CH T224162B CAPACITANCE (Ta =25°C, Vcc =5V ±10 %) Parameter Input Capacitance (address) Input Capacitance (clocks) Output Capacitance (data-in, data-out) Symbol CI1 CI2 CI/O Typ Max 5 7 10 Unit pF pF pF Notes 1 1 1 N ote: 1. Capacitance measured with Boonton Meter or effective capacitance measuring method. AC ELECTRICAL CHARACTERISTICS (note 14) (Ta =0 to 70°C, Vcc=5V ± 10 %, Vss=0V) Test Conditions (note 29) AC CHARACTERISTICS PARAMETER Read or Write Cycle Time Read Write Cycle Time EDO-Page-Mode Read or Write Cycle Time EDO-Page-Mode ReadWrite Cycle Time Access Time From RAS Access Time From C AS SYM t RC -22 42 45 65 10 32 22 7 8 11 13 22 10K 25 25 7 8 12 14 10K 28 Input timing reference levels: 0.8V, 2.4V Output Load: 2TTL gate + CL (50pF) -25 -28 48 70 10 34 28 7 8 13 15 10K 35 65 95 12 40 35 9 9 15 18 10K 45 -35 85 115 16 46 45 11 11 19 22 10K 50 -45 -50 100 135 20 57 UNIT Notes MIN MAX MIN MAX MIN MAX MIN MAX MIN M AX MIN M AX t RWC 62 t PC t PCM t RAC t CAC 8 30 ns ns ns ns 50 13 13 23 26 10K 22 22 4 5,20 13,20 ns ns ns ns ns ns t OAC Access Time From OE Access Time From Column t AA Address Access Time From CAS Precharge R AS Pulse Width t ACP t RAS 20 RAS Pulse Width (EDO Page Mode) RAS Hold Time RAS Precharge Time CAS Pulse Width CAS Hold Time CAS Precharge Time (EDO Page Mode) CAS to RAS Precharge Time t RASC 22 100K 25 100K 28 100K 35 100K 45 100K 50 100K ns t RSH t RP t CAS t CSH t CP 7 15 4 19 3 9 3 15 10K 7 15 4 20 3 10 3 17 10K 7 17 4 22 3 10 3 19 10K 9 25 4 30 3 10 3 26 10K 11 35 6 40 5 10 5 34 10K 13 37 8 50 6 19 5 37 10K ns ns ns ns ns ns ns 27 26 19 23 7,18 19 R AS to C AS Delay Time t RCD t CRP Taiwan Memory Technology, Inc. reserves the right P. 4 to change products or specifications without notice. Publication Date:AUG. 2000 Revision:L tm TE CH T224162B -22 0 5 8 0 4 17 11 0 0 0 3 3 8 0 4 19 4 6 5 0 4 19 0 4 19 4 6 5 0 4 19 34 11 0 5 8 0 4 19 12 0 0 0 3 3 8 0 4 21 4 6 5 0 4 21 37 12 -25 0 5 8 0 4 21 13 0 0 0 3 3 8 0 4 30 4 7 7 0 4 30 51 13 -28 0 5 8 0 4 30 15 0 0 0 3 3 15 8 0 6 46 6 9 9 0 6 40 61 20 -35 0 5 8 0 6 40 19 0 0 0 3 3 15 8 0 7 51 8 10 11 0 7 45 70 26 -45 - 50 0 5 10 0 7 45 23 0 0 0 3 3 15 8 29 AC ELECTRICAL CHARACTERISTICS (continued) AC CHARACTERISTICS P ARAMETER Row Address Setup Time Row Address Hold Time SYM t ASR t RAH MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX UNIT Notes ns ns ns ns R AS to Column Address t RAD Delay Time Column Address Setup Time t ASC Column Address Hold Time t CAH Column Address Hold Time t AR (Reference to RAS ) Column Address to RAS t RAL Lead Time Read Command Setup Time t RCS Read Command Hold Time t RCH Reference to CAS 8 18 ns 18 ns ns 15,18 9,15, ns 19 ns ns ns ns ns ns Read Command Hold Time Reference to RAS C AS to Output in Low-Z Output Buffer Turn-off Delay From CAS or RAS Output Buffer Turn-off to OE t RRH t CLZ t OFF1 t OFF2 9 20 10,17, 20 17,28 Write Command Setup Time t WCS Write Command Hold Time Write Command Hold Time (Reference to RAS ) Write Command Pulse Width Write Command to RAS Lead Time Write Command to CAS Lead Time Data-in Setup Time Data-in Hold Time Data-in Hold Time (Reference to R AS ) RAS to WE Delay Time t WCH t WCR tW P t RWL t CW L t DS t DH t DHR 11,15, 18 n s 15,27 15 ns ns ns ns ns 15 15 15,19 12,20 ns 12,20 ns ns t RWD 31 11 AC ELECTRICAL CHARACTERISTICS (continued) Taiwan Memory Technology, Inc. reserves the right P. 5 to change products or specifications without notice. Publication Date:AUG. 2000 Revision:L tm TE CH SYM t AWD t CWD tT t REF t RPC t CSR t CHR -22 -25 -28 -35 -45 T224162B -50 MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX MIN MAX AC CHARACTERISTICS P ARAMETER Column Address to WE Delay Time CAS to WE Delay Time Transition Time (rise or fall) Refresh Period (512 cycles) RAS to CAS Precharge Time CAS Setup Time (CBR REFRESH) CAS Hold Time (CBR REFRESH) O E Hold Time From W E During Read-Modify-Write Cycle OE Low to CAS High Setup Time OE High Hold Time From CAS High O E High Pulse Width OE Setup Prior to CAS During Hidden Refresh Cycle Last C AS Going Low to First CAS Returning High Data Output Hold After CAS Returning Low Output Disable Delay From WE UNIT Notes 21 17 1.5 50 8 21 17 1.5 50 8 24 18 1.5 50 8 31 25 2.5 50 8 35 27 2.5 50 8 43 33 2.5 ns 11 ns 11,18 ns 2,3 ms ns ns 1,18 ns 1,19 ns 16 ns ns ns ns 50 8 10 5 7 10 5 7 10 5 7 10 10 10 10 10 10 10 10 10 t OEH 4 4 4 4 6 8 t OES t OEHC t OEP t ORD 4 4 4 4 5 5 2 2 0 2 2 0 2 2 0 2 2 0 2 2 0 2 2 0 t CLCH t COH t WHZ 4 3 3 6 4 3 3 7 4 3 3 7 4 3 3 7 6 4 3 7 8 5 3 ns ns 9 ns 21 Taiwan Memory Technology, Inc. reserves the right P. 6 to change products or specifications without notice. Publication Date:AUG. 2000 Revision:L tm TE CH T224162B goes low result in a LATE WRITE( OE controlled) cycle. 12. These parameters are referenced to CAS leading edge in EARLY WRITE cycles and W E leading edge in LATE WRITE or READMODIFY-WRITE cycles. 13. During a READ cycle, if OE is low then taken HIGH before CAS goes high, I/O goes open, if O E is tied permanently low, a LATE WRITE or READ-MODIFY-WRITE operation is not possible. 14. An initial pause of 100ms is required after power-up followed by eight RAS refresh cycles ( RAS only or CBR) before proper device operation is assured. The eight RAS cycle wake-ups should be repeated any time the tREF refresh requirement is exceeded. 15. WRITE command is defined as W E going low. 16. LATE WRITE and READ-MODIFY-WRITE cycles must have both tOFF2 and tOEH met ( OE high during WRITE cycle) in order to ensure that the output buffers will be open during the WRITE cycles. 17. The I/Os open during READ cycles once tOFF1 or tOFF2 occur. 18. The first CAS edge to transition low. 19. The last CAS edge to transition high. 20. Output parameter (I/O) is referenced to corresponding CAS input, IO1~8 by C ASL and IO9~16 by CASH . 21. Last falling CAS edge to first rising CAS edge. 22. Last rising C AS edge to next cycle's last rising CAS edge. 23. Last rising CAS edge to first falling CAS edge. 24. First IOs controlled by the first C AS to go low. 25. Last IOs controlled by the last CAS to go high. 26. Each CAS must meet minimum pulse width. 27. Last C AS to go low. 28. All IOs controlled, regardless CASL and CASH . 29. Data outputs are measured with a load of 50pF. The output reference levels are VOH /VOL =2.0V/0.8V; The input levels are VIH/VIL= 3.0V/0V. Publication Date:AUG. 2000 Revision:L N otes: 1. Enables on-chip refresh and address counters. 2. V IH(2.4V) and VIL(0.8V) are reference levels for measuring timing of input signals. Transition times are measured between VIH (2.4V) and VIL (0.8V). 3. In addition to meet the transition rate specification, all input signals must transit between VIH and VIL in a monotonic manner. 4. Assume that tRCD < tRCD(max). If tRCD is greater than the maximum recommended value shown in this table, tRAC will increase by the amount that t RCD exceeds the value shown. 5. Assume that tRCD ≥ tRCD(max) . 6. If CAS is low at the falling edge of RAS , data-out will be maintained from the previous cycle. To initiate a new cycle and clear the data-out buffer, CAS and RAS must be pulsed high. 7. Operation within the tRCD(max) limit ensures that tRAC(max) can be met. tRCD(max) is specified as a reference point only; if tRCD is greater than the specified tRCD(max) limit, access time is controlled by tCAC. 8. Operation within the t AD limit ensures that R tRAC(max) can be met. tRAD(max) is specified as a reference point only; if tRAD is greater than the specified tRAD(max) limit, access time is controlled by t AA. 9. Either tRCH or tRRH must be satisfied for a READ cycle. 10. tOFF1 (max) defines the time at which the output achieves the open circuit condition; it is not a reference to VOH or VOL. 11. tWCS, tRWD, tAWD and tCWD are restrictive operating parameters in LATE WRITE and READ-MODIFY-WRITE cycles only. If t CS ≥ tWCS(min), the cycle is an W EARLY WRITE cycle and the data output will remain an open circuit throughout the entire cycle. If tRWD ≥ tRWD(min), tAWD ≥ tAWD (min) and tCWD ≥ tCWD(min), the cycle is READ-WRITE and the data output will contain data read from the selected cell. If neither of the above conditions is met, the state of I/O (at access time and until CAS and RAS or OE go back to VIH) is indeterminate. O E held high and W E taken low after C AS Taiwan Memory Technology, Inc. reserves the right P. 7 to change products or specifications without notice. tm TE CH READ CYCLE t RC tR A S tR P T224162B V RAS V IH IL tCRP CA S L , CA S H V IH V IL tR A D tA S R ADDR V IH V IL ROW tRAH tR C D tC S H tR S H tC A S tC L C H tR R H tAR tR A L t AS C tC A H C O L U MN t RC S tR C H ROW V WE V IH IL tA A tR A C tC A C tC L Z N O TE 1 t OFF 1 I/O V OH V OL O P EN tO A C V A L ID D A T A tO F F 2 OP EN V OE V IH IL EARLY WRITE CYCLE tR C tR A S RAS V IH V IL tR P tC R P V CA S L ,C AS H V IH IL t R AD tR C D tC S H tR S H tC A S tC L C H tAR tA S R tRAH RO W t AS C tR A L tC A H ROW A DDR V IH V IL C O L U MN t C WL t R WL t WC R t WC S t WC H t WP WE V IH V IL tD S tD H R tD H V A L ID D A T A V IOH I/O V IOL OE V IH V IL DON'T CARE UNDEFINED N ote: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last. Taiwan Memory Technology, Inc. reserves the right P. 8 to change products or specifications without notice. Publication Date: AUG. 2000 Revision:L tm TE CH READ WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE CYCLES) t R WC tR A S RAS V IH V IL tR P T224162B tC R P CA S L ,C AS H V IH V IL tR CD tC S H tR S H tC A S tCLCH tA R tR A D tA S R tR A H ROW t AS C tR A L tC A H RO W t R WD t C WD t A WD t C WL t R WL t WP A DDR V IH V IL COLUMN t RC S V IH WE V IL tA A tR A C tC A C t CL Z tD S VA L ID D t DH OPE N V I/O IOH V IOL V IH V IL OP EN tO A C OU T V A L ID D IN tO F F 2 tO E H OE E DO-PAGE-MODE READ CYCLE t R A SC tR P V RAS VIH IL t CR P tC S H t RC D tC A S , tC L C H tP C tC P ( NO T E 2 ) tC AS , tC L C H t CP tR S H tC AS , tC L C H tC P N CA S L, CA S H VIH V IL tR A D tR A H tAR tR A L t AS C tC A H tA S C tC A H tA S C tC A H tA S R ADDR VIH V IL RO W t RC S C OLUMN C O L U MN C OLUMN tR C H ROW t R RH WE VIH V IL t AA tR A C tC A C tCLZ tC O H V A L ID DA TA tO A C tO E S tA A tA C P tC A C tC L Z V A L ID D AT A tO FF 2 t AA tA C P tC A C N OTE1 tO F F 1 V A L ID DA TA tO F F 2 OP EN I/O V OH V OL OP EN tO E H C tO A C tO E S OE VIH V IL tOEP DON'T CARE UNDEF INED N ote: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last. 2. tPC can be measured from falling edge of CAS to falling edge of CAS , or from rising edge of CAS to rising edge of RAS . Both measurements must meet the t PC specification. Taiwan Memory Technology, Inc. reserves the right P. 9 to change products or specifications without notice. Publication Date: AUG. 2000 Revision:L tm TE CH EDO-PAGE-MODE EARLY-WRITE CYCLE t R A SC T 224162B t RP RAS VIH V IL tC R P tC S H tRC D t CA S , tC L C H tP C tC P tC A S , t C L C H t CP tR S H tC A S , tC LC H tC P N V IH CAS L ,C AS H V IL tAR tR A D t AS R tR A H tA S C tC A H tA S C t C AH tA S C tR A L tC A H ADDR V IH V IL RO W C O L U MN tW C S tC W L tW C H tW P C OLUMN tWC S tC W L tW C H tW P C O LU M N tW C S tC W L tW C H tWP ROW WE V IH V IL tW C R tD H R tD S tD H tD S tD H tD S t RWL tD H V IOH I/O V IOL V IH V IL V A L ID D A T A V A L ID D A T A V A L ID D A T A OE EDO-PAGE-MODE READ-WRITE CYCLE (LATE WRITE and READ-MODIFY-WRITE CYCLES) t R AS C tR P RA S V IH V IL tC RP t RC D tC S H tC A S , tC L C H t CP tP C M tC A S , tC L C H tC P t RS H tC A S , tC LC H tC P N V CA S L ,C AS H V IH IL tA SR tA R tR A D tR A H tR A L tA S C tC A H t AS C tC A H tA S C tC A H ADDR V IH V IL ROW C O L U MN tRW D tRC S tC W L tW P tA W D tC W D C O L U MN C O L U MN RO W t RW L tC W L tW P tA W D tC W D tA W D tC W D tC W L tW P WE V IH V IL tR A C t AA tD H tD S tC A C tC L Z tA A tD H t AC P tC A C tC L Z VAL I D D OU T VA LI D D IN VAL I D DO U T VA LI D D IN tA A tA C P tC A C tC L Z VAL I D DO U T VAL I D D IN tD H tD S tD S I/O V IOH V IOL OP EN O PEN tO F F 2 tO A C tO A C tOFF2 tO A C tOFF2 tO E H V OE V IH IL DON'T CAR E UNDEF INED N ote: 1. tPC can be measured from falling edge to falling edge of CAS , or from rising edge to rising edge of CAS . Both measurements must meet the tPC specification. Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. P. 10 Publication Date: AUG. 2000 Revision:L tm RA S V IH V IL TE CH EDO-PAGE-MODE READ-EARLY-WRITE CYCLE (Psuedo READ-MODIFY-WRITE) t R A SC T 224162B tR P tCSH tC R P tR C D t PC tCAS tC P tC A S t PC tCP tR S H tC A S tC P V C AS V IH IL t R AD tA S R t R A H V ADDR V IH IL ROW tAR tA S C tC A H tA S C tC A H tA S C tR A L tCAH RO W C O L U M N (A) tRCS C O LU M N(B ) tRCH C O L U M N (N ) t WC S t WC H WE V IH V IL tR A C tA A tCAC tA A t AC P tC A C tC O H VA L ID D A TA (A) t OA C V A L ID D A T A (B ) VALID DATA IN t WH Z tD S t DH V IOH I/O V IOL OP EN OE V IH V IL RAS ONLY REFRESH CYCLE (ADDR=A0-A8 ; OE , W E =DON‘T CARE) tR C tR A S V IH R AS V IL tR P tC R P t RP C V CA S L ,C A S H V IH IL tA S R RO W tRAH ROW A DDR V IH V IL V I/O V OH OL OP EN DON'T CARE UNDEFINE D Taiwan Memory Technology, Inc. reserves the right to change products or specifications without notice. P. 11 Publication Date: AUG. 2000 Revision:L tm RA S TE CH CBR REFRESH CYCLE (A0-A8 ; OE =DON‘T CARE) T224162B tR P V IH V IL tR A S tRP tR A S tR P C tC P N tC S R t C HR t RP C tC S R tC H R V C A S H, CA S L V IH IL I/O WE V IH V IL O P EN HIDDEN REFRESH CYCLE ( W E =HIGH ; O E =LOW) (R EA D ) tRAS R AS V IH V IL tRP (R E F R E S H ) tR A S tCRP tR C D t R SH t C HR C AS L ,C A S H V IH V IL tR A D tA S R tR A H R OW tA R tRAL tA S C tCAH V ADDR V IH IL C O L U MN tA A tR A C tC A C tCLZ NOT E1 tO F F 1 I/O V OH V OL O P EN t OA C V A L ID D A T A tO F F 2 O P EN OE V IH V IL t ORD DON'T CARE UNDEFINED N ote: 1. tOFF1 is referenced from the rising edge of RAS or CAS , whichever occurs last. Taiwan Memory Technology, Inc. reserves the right P. 12 to change products or specifications without notice. Publication Date: AUG. 2000 Revision:L tm TE CH T224162B PACKAGE DIMENSIONS 40-LEAD SOJ DRAM (400 mil) SYMBOL A B C D E F G H I J K L y DIMENSIONS IN INCHES 1.025 ±0.010 0.400 ±0.005 0.045(MAX) 0.050 ±0.006 0.019 ±0.003 0.026 ±0.003 0.440 ±0.010 0.011 ±0.003 0.025(MIN) 0.364 ±0.020 0.047 ±0.006 0.150(MAX) 0.004(MAX) DIMENSIONS IN MM 26.035±0.254 10.160±0.127 1.143(MAX) 1.27 ±0.152 0.483 ±0.08 0.661 ±0.080 11.176±0.254 0.280 ±0.080 0.635(MIN) 9.246 ±0.508 1.194 ±0.152 3.810(MAX) 0.102(MAX) Taiwan Memory Technology, Inc. reserves the right P. 13 to change products or specifications without notice. Publication Date: AUG. 2000 Revision:L tm TE CH T224162B PACKAGE DIMENSIONS 40-LEAD TSOP II DRAM (400 mil) "A" SYMBOL A A1 A2 b e D E E1 L1' L' y θ DIMENSIONS IN INCHES 0.047(max) 0.004±0.002 0.039±0.002 0.014(typ.) 0.030(typ.) 0.725±0.004 0.463±0.008 0.400±0.004 0.031 0.020±0.004 0.004(max) 0°~5° DIMENSIONS IN MM 1.20(max) 0.10±0.05 1.00±0.05 0.35(typ.) 0.80(typ.) 18.41±0.10 11.76±0.20 10.16±0.10 0.80 0.500±0.10 0.10(max) 0°~5° Taiwan Memory Technology, Inc. reserves the right P. 14 to change products or specifications without notice. Publication Date: AUG. 2000 Revision:L