T431616C-7SG

tm • • • • • TE CH T431616C SDRAM FEATURES 3.3V power supply Clock cycle time : 6 / 7 ns Dual banks operation LVTTL compatible with multiplexed address All inputs are sampled at the positive going edge of system clock • Burst Read Single-bit Write operation • DQM for masking • Auto refresh and self refresh • 32ms refresh period (2K cycle) • MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1 , 2 , 4 , 8 & full page) - Burst Type (Sequential & Interleave) • Available package type : - 50 pin TSOP(II)/lead-free • Operating temperature : - 0 ~ +70 °C 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM GRNERAL DESCRIPTION The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technology . Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle . Range of operating frequencies , programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth , high performance memory system applications. ORDERING INFORMATION PART NO. CLOCK CYCLE TIME 6ns 6ns 7ns 7ns MAX FREQUENCY PACKAGE TSOP-II TSOP-II Lead-free TSOP-II TSOP-II Lead-free OPERATING TEMPERATURE T431616C-6S T431616C-6SG T431616C-7S T431616C-7SG 166 MHz 166 MHz 143 MHz 143 MHz 0 ~ +70 °C 0 ~ +70 °C 0 ~ +70 °C 0 ~ +70 °C TM Technology Inc. reserves the right P. 1 to change products or specifications without notice. Publication Date: AUG. 2004 Revision: A tm VDD DQ0 DQ1 V SSQ DQ2 DQ3 VDDQ DQ4 DQ5 V SSQ DQ6 DQ7 VDDQ LD Q M WE CAS RAS CS BA A 1 0 /A P A0 A1 A2 A3 VDD TE CH T431616C PIN ARRANGEMENT (TSOP-II Top View) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 5 0 P IN T S O P ( II) ( 4 0 0 m il x 8 2 5 m il) ( 0 .8 m m P IN P IT C H ) 50 49 48 47 46 45 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 V ss D Q 15 D Q 14 V SSQ D Q 13 D Q 12 VDDQ D Q 11 D Q 10 V SSQ DQ9 DQ8 VDDQ N .C /R F U UDQM CLK CKE N .C A9 A8 A7 A6 A5 A4 V ss TM Technology Inc. reserves the right P. 2 to change products or specifications without notice. Publication Date: AUG. 2004 Revision: A tm TE CH T431616C BLOCK DIAGRAM I/O Control LW E Bank Select D ata Input Register LDQ M Row Decoder Row Buffeer Refresh Counter Sense AMP 512K x 16 Output Buffer D Qi Address Register CLK 512K x 16 A DD LCBR LRAS Col. Buffer Colum n Decoder Latency & Burst Length LCKE LRAS LCBR LW E LCAS Tim ing Register Program m ing R egister LW CB R LDQ M CLK CK E CS RA S CA S WE L(U)DQ M TM Technology Inc. reserves the right P. 3 to change products or specifications without notice. Publication Date: AUG. 2004 Revision: A tm PIN CLK TE CH T431616C PIN DESCRIPTION NAME System Clock Chip Select INPUT FUNCTION Active on the positive going edge to sample all input. Disables or enables device operation by masking or enabling all input except CLK,CKE and L(U)DQM Masks system clock to freeze operation from the next clock cycle. CS CKE Clock Enable CKE should be enabled at least one cycle prior to new command. Disable input buffers for power down in standby. A0 ~ A10/AP BA Address Bank Select Address Row/column addresses are multiplexed on the same pins. Row address : RA0 ~ RA10,column address : CA0 ~ CA7 Selects bank to be activated during row address latch time. Select bank for read/write during column address latch time. Latches row addresses on the positive going edge of the CLK RAS Row Address Strobe with RAS low. Enables row access & precharge. Latches column addresses on the positive going edge of the CLK CAS Column Address Strobe with C AS low. Enables column access . WE L(U)DQM DQ0 ~ DQ15 VDD/VSS VDDQ/VSSQ Write Enable Data Input/Output Mask Data Input/Output Enables write operation and row precharge. Latches data in starting from CAS , WE active. Makes data output Hi-Z, tSHZ after the clock and masks the output. Blocks data input when L(U)DQM active. Data inputs/outputs are multiplexed on the same pins. Power Supply/Ground Power and ground for the input buffers and the core logic. Data Output Power/Ground No Connection/Reserved for Future Use Isolated power supply and ground for the output buffers to provide improved noise immunity. This pin is recommended to be left No Connection on the device. N.C/RFU TM Technology Inc. reserves the right P. 4 to change products or specifications without notice. Publication Date: AUG. 2004 Revision: A tm Parameter TE CH T431616C ABSOLUTE MAXIMUM RATINGS Symbol VIN,VOUT VDD,VDDQ Iout PD TOPR Tstg Value -1.0 to 4.6 -1.0 to 4.6 50 1 0 to +70 -55 to +125 Unit V V mA W °C °C Voltage on Any Pin Relative To Vss Supply Voltage Relative To Vss Short circuit Output Current Power Dissipation Operating Temperature Storage Temperature Note : Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to recommended operating condition. Exposure to higher than recommended voltage for extended periods of time could affect device reliability. RECOMMENDED DC OPERATING CONDITIONS (TA = 0 to +70 °C, Voltage referenced to VSS=0V) Parameter Supply Voltage Input High Voltage Input Low Voltage Output logic high voltage Output logic low voltage Input leakage current Output leakage current Symbol VDD,VDDQ VIH VIL VOH VOL IIL IOL Min. 3.0 2.0 -0.3 2.4 -5 -5 Typ 3.3 3.0 0 Max. 3.6 VDD+0.3V 0.8 0.4 5 5 Unit V V V V V uA uA 1 2 IOH=-2mA IOL=2mA 3 4 Notes Note : 1. VIH (max) = 4.6V AC for pulse width ≤ 10ns acceptable. 2. VIL (min) = -1.0V AC for pulse width ≤ 10ns acceptable. 3. Any input 0V ≤ VIN ≤ VDD+ 0.3V , all other pin are not under test = 0V. 4. Dout = disable, 0V ≤ VOUT ≤ VDD . CAPACITANCE (TA =25 °C,VDD=3.3V, f = 1MHz) Pin CLOCK ADDRESS DQ0 ~ DQ15 RAS,CAS,WE,CS,CKE,LDQM, UDQM Symbol CCLK CADD COUT CIN Min 2.5 2.5 3.0 2.5 Max 4.0 4.0 5.0 4.0 Unit pF pF pF pF TM Technology Inc. reserves the right P. 5 to change products or specifications without notice. Publication Date: AUG. 2004 Revision: A tm TE CH T431616C DC CHARACTERISTICS TA = 0 to 70°C, VIH(min)/VIL(max)=2.0V/0.8V Parameter Operating Current ( One Bank Active) Symbol ICC1 Speed version -6 145 2 3 30 mA ICC2NS Active Standby ICC3P Current in powerICC3PS down mode Active Standby ICC3N Current in non power-down mode (One Bank Active) ICC3NS Operating Current (Burst Mode) Refresh Current Self refresh Current ICC4 150 150 ICC5 ICC6 90 1 2 10 10 40 mA 30 140 140 80 -7 140 mA Burst Length = 1 Unit Test Condition Note tRC≥tRC(min) ,tCC≥tCC(min),IOL= 0 mA CKE ≤ VIL(max),tCC= tCC(min) 1,3 Precharge Standby ICC2P Current in powerICC2PS down mode Precharge Standby Current in non power-down mode ICC2N mA CKE ≤ VIL(max),CLK ≤ VIL(max), tCC = ∞ 3 CKE ≥ VIH(min), CS ≥ VIH(min),tCC= tCC(min) Input signals are changed one time during 30ns CKE≥VIH(min),CLK ≤ VIL(min), tCC = ∞ Input signals are stable CKE ≤ VIL(max),tCC= tCC(min) CKE ≤ VIL(max),CLK 3 mA ≤ VIL(max), tCC = ∞ 3 CKE≥VIH(min), CS ≥VIH(min),tCC= tCC(min) Input signals are changed one time during 30ns CKE≥VIH(min),CLK ≤ VIL(min), tCC = ∞ Input signals are stable CAS Latency 3 IOL=0 mA,Page Burst All Band Activated CAS Latency 2 3 mA mA tRC ≥tRC(min) mA CKE ≤ 0.2V 1,3 tCCD= tCCD(min) 2,3 Note: 1. Measured with output open. Addresses are changed only one time during tCC(min) . 2. Refresh period is 32ms. Addresses are changed only one time during tCC(min) . 3. tCC : Clock cycle time. tRC : Row cycle time. tCCD : Column address to column address delay time. TM Technology Inc. reserves the right P. 6 to change products or specifications without notice. Publication Date: AUG. 2004 Revision: A tm TE CH T431616C AC OPERATING CONDITIONS (VDD=3.3V ±0.3V ,TA= 0 to 70°C) Parameter Input levels (VIH/VIL) Input timing measurement reference level Input rise and fall time Output timing measurement reference level Output load condition Value 2.0 / 0.8 1.4 Unit V V ns V tr / tf = 1 / 1 1.4 See Fig.2 3.3V Output 1200 ohm Output 870 ohm 30pf VOH(DC)=2.4,IOH=-2mA VOL(DC)=0.4,IOL=2mA ZO=50 ohm Vtt=1.4v 50 ohm 30pf (Fig.1) DC Output Load Circuit (Fig.2)AC Output Load Circuit TM Technology Inc. reserves the right P. 7 to change products or specifications without notice. Publication Date: AUG. 2004 Revision: A tm TE CH T431616C OPERATING AC PARAMETER (AC opterating conditions unless otherwise noted) Parameter Row active to row active delay RAS to CAS delay Row precharge time Row active time Row cycle time Last data in to new col. Address delay Last data in to row precharge Last data in to burst stop Col. Address to col. Address delay Number of valid output data Symbol Speed Version -6 -7 12 18 18 36 100K 60 1 2 1 1 1 1 70 14 21 21 42 Unit ns ns ns ns ns ns CLK CLK CLK CLK ea Note 1 1 1 1 1 2 2 2 3 4 tRRD(min) tRCD(min) tRP(min) tRAS(min) tRAS(max) tRC(min) tCDL(min) tRDL(min) tBDL(min) tCCD(min) CAS latency=3 CAS latency=2 Note: 1. The minimum number of clock cycles is determined by dividing the minimum time required with clock cycle time and then rounding off to the next higher integer. 2. Minimum delay is required to complete write. 3. All parts allow every cycle column address change. 4. In case of row precharge interrupt, auto precharge and read burst stop. The earliest a precharge command can be issued after a Read command without the loss of data is CL + BL-2 clocks. TM Technology Inc. reserves the right P. 8 to change products or specifications without notice. Publication Date: AUG. 2004 Revision: A tm TE CH T431616C AC CHARACTERISTICS (AC opterating conditions unless otherwise noted) Parameter CLK cycle time CLK to valid Output delay Output data hold time CLK high pulse width CLK low pulse width Input setup time Input hold time CLK to output in Low-Z CAS Latency = 3 CLK to output in Hi-Z CAS Latency = 2 CAS Latency = 3 CAS Latency = 2 CAS Latency = 3 CAS Latency = 2 Symbol Min -6 Max Min -7 Max Unit Note 1K 6 6 ns ns 1 ns ns ns ns ns ns ns 6 6 ns ns 2 3 3 3 3 2 1 tCC tSAC tOH tCH tCL tSS tSH tSLZ tSHZ 6 8 1 2 2 2 1 1 - 1K 5.5 6 7 8.6 1 2.5 2.5 2 1 1 5.5 6 - Note: 1. Parameters depend on programmed CAS latency. 2. If clock rising time is longer than 1ns,(tr/2-0.5)ns should be added to the parameter. 3. Assumed input rise and fall time (tr & tf)=1ns. If tr & tf is longer than 1ns,transient time compensation should be considered, i.e.,[(tr+tf)/2-1]ns should be added to the parameter. TM Technology Inc. reserves the right P.9 to change products or specifications without notice. Publication Date: AUG. 2004 Revision: A tm TE CH T431616C (Unit : number of clock) CAS Latency 3 3 2 2 2 FREQUENCY vs. AC PARAMETER RELATIONAHIP TABLE T431616C-6S Frequency 166MHz(6.0ns) 143MHz(7.0ns) 125MHz(8.0ns) 111MHz(9.0ns) 100MHz(10.0ns) tRC 60ns 10 9 8 7 6 tRAS 36ns 6 6 5 4 4 tRP 18ns 3 3 3 2 2 tRRD 12ns 2 2 2 2 2 tRCD 18ns 3 3 3 2 2 tCCD 6ns 1 1 1 1 1 tCDL 6ns 1 1 1 1 1 tRDL 12ns 2 2 2 2 2 T431616C-7S Frequency 143MHz(7.0ns) 125MHz(8.0ns) 111MHz(9.0ns) 100MHz(10.0ns) 83MHz(12.0ns) (Unit : number of clock) CAS Latency 3 3 2 2 2 tRC 70ns 10 9 8 7 6 tRAS 42ns 6 6 5 5 4 tRP 21ns 3 3 3 3 2 tRRD 14ns 2 2 2 2 2 tRCD 21ns 3 3 3 3 2 tCCD 7ns 1 1 1 1 1 tCDL 7ns 1 1 1 1 1 tRDL 14ns 2 2 2 2 2 Note : 1. Clock count formula : clock ≥ base value (round off whole number). clock period TM Technology Inc. reserves the right P.10 to change products or specifications without notice. Publication Date: MAY. 2003 Revision: D tm 11 0 11 x 11 10 0 10 x 10 9 0 9 1 9 TE CH 8 0 8 0 8 1 8 1 8 0 7 1 7 0 7 0 7 1 7 0 6 5 4 3 2 1 0 JEDEC Standard Test Set (refresh counter test) 6 5 4 LTMODE 6 5 4 3 WT 3 2 1 BL 1 0 T431616C MODE REGISTER Burst Read and Single Write (for Write Through Cache) 0 2 Use in future 6 v 5 v 4 v 3 v 3 WT 2 v 2 1 v 1 BL 0 v 0 11 x 11 0 10 x 10 0 9 x 9 0 Vender Specific v = Valid x = Don’t care Bit2-0 000 001 010 011 100 101 110 111 0 WT=0 1 2 4 8 R R R Full page Sequential Interleave CAS Latency R R 2 3 R R R R Remark R : Reserved WT=1 1 2 4 8 R R R R 6 5 4 LTMODE Mode Register Set Burst length Wrap type 1 Bit6-4 000 001 010 011 100 101 110 111 Latency mode Mode Register Write Timing CLOCK CKE CS RAS CAS WE A0-A11 TM Technology Inc. reserves the right to change products or specifications without notice. P.11 Publication Date: AUG. 2004 Revision: A tm TE CH T431616C Burst Length and Sequence (Burst of Two) Starting Address (column address A0 binary) Sequential Addressing Sequence (decimal) Interleave Addressing Sequence (Decimal) 0 1 (Burst of Four) Starting Address (column address A1-A0 binary) 0,1 1,0 0,1 1,0 Sequential Addressing Sequence (decimal) Interleave Addressing Sequence (Decimal) 00 01 10 11 (Burst of Eight) Starting Address (column address A2-A0 binary) 0,1,2,3 1,2,3,0 2,3,0,1 3,0,1,2 0,1,2,3 1,0,3,2 2,3,0,1 3,2,1,0 Sequential Addressing Sequence (decimal) Interleave Addressing Sequence (Decimal) 000 001 010 011 100 101 110 111 1Mx16 divice. 0,1,2,3,4,5,6,7 1,2,3,4,5,6,7,0 2,3,4,5,6,7,0,1 3,4,5,6,7,0,1,2 4,5,6,7,0,1,2,3 5,6,7,0,1,2,3,4 6,7,0,1,2,3,4,5 7,0,1,2,3,4,5,6 0,1,2,3,4,5,6,7 1,0,3,2,5,4,7,6 2,3,0,1,6,7,4,5 3,2,1,0,7,6,5,4 4,5,6,7,0,1,2,3 5,4,7,6,1,0,3,2 6,7,4,5,2,3,0,1 7,6,5,4,3,2,1,0 Full page burst is an extension of the above tables of Sequential Addressing, with the length being 256 for POWER UP SEQUENCE 1. Apply power and start clock, attempt to maintain CKE = ‘H’ , L(U)DQM = ‘H’ and the other pin are NOP condition at the inputs. 2. Maintain stable power, stable clock and NOP input condition for a minimum of 200us. 3. Issue precharge commands for all banks of the devices. 4. Issue 2 or more auto-refresh commands. 5. Issue mode register set command to initalize the mode register. Cf.) Sequence of 4 & 5 is regardless of the order. TM Technology Inc. reserves the right P.12 to change products or specifications without notice. Publication Date: AUG. 2004 Revision: A tm Register Refresh TE CH T431616C SIMPLIFIED TRUTH TABLE COMMAND CKEn-1 CKEn CS Mode Register Set H X L Auto Refresh Self Refresh Entry Exit H L H H H H H H L H L H H H X H L H X X X X X L H L H L L H L L L L L H L X H L H L L H X L H H H L X V X X H X V X L H X H L L H H X V X X H X V H H X H H L L L X V X X H X V X X X X X X X X X X X X V X 7 V X L H X V V V X X Row Address L H L H X Column Address (A0~A7) Column Address (A0~A7) RAS CAS WE DQM BA A10/AP A9~A0 Note L L L X X 1,2 3 3 Bank Active & Row Address Auto Precharge Disable Read Column Auto Precharge Enable Address Write & Column Auto Precharge Disable Auto Precharge Enable Address Burst Stop 4,5 4,5 6 4 Precharge Bank Selection Both Banks Entry Exit Entry Clock Suspend or Active Power Down Precharge Power Down Mode DQM No Operation Command Exit H X X X X X L H H H (V=Valid , X=Don’t Care , H=Logic High , L=logic Low) Notes : 1. OP Code : Operation Code. A0~A10/AP , BA : Program keys.(@MRS) 2. MRS can be issued only at both banks precharge state. A new command can be issued after 2 clock cycle of MRS. 3. Auto refresh functions are as same as CBR refresh of DRAM. The automatical precharge without row precharge command is meant by ‘Auto’. Auto / self refresh can be issued only at both banks precharge state. 4. BA : Bank select address. If ’Low’ : at read , wriye , row active and precharge , bank A is selected. If ‘High’ : at read , wriye , row active and precharge , bank B is selected. If A10/AP is ‘High’ : at row precharge , BA ignored and both banks are selected. 5. During burst read or write with auto precharge , new read/write command cannotbeissued. Another bank read/write command can be issued after the end of burst. New row active of the associated bank can be issued at tRP after the end of burst. 6. Burst stop command is valid at every burst length. 7. DQM sampled at positive going edge of a CLK masks the data-in at the very CLK (Write DQM latency is 0), but makes Hi-Z state the data-out of 2 CLK cycles after. (Read DQM latency is 2) TM Technology Inc. reserves the right P.13 to change products or specifications without notice. Publication Date: AUG. 2004 Revision: A tm 0 C LOCK CKE TE CH tCH T431616C Single Bit READ-Write Cycle (Same Page) @CAS Latency=3,Burst Length=1 1 2 3 4 t CL 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 tCC HIGH tRAS tRC *Note1 tSH CS tRCD tS H tSS tRP RAS tSS t SH t CCD CAS tSS tSH tSS ADDR Ra tSS *Note2 Ca Cb tSH Cc Rb *Note2. 3 *Note2. 3 *Note2. 3 *Note4 *Note2 BA Bs Bs Bs Bs Bs Bs A10/AP Ra *Note3 *Note3 *Note3 *Note4 Rb tRAC tSRC tSH DQ tSLZ Qa tOH Db tSS tSH Qc WE tSS tSH DQM tSS Row Active Read W rite Read Precharge Row Active :Don't care TM Technology Inc. reserves the right P.14 to change products or specifications without notice. Publication Date: AUG. 2004 Revision: A tm TE CH T431616C *note : 1. All input expect CKE & DQM can be don’t care when CS is high at the CLK high going edge. 2. Bank active & read/write are controlled by BA. BA 0 1 Active & Read/Write Bank A Bnak B 3. Enable and disable auto precharge function are controlled by A10/AP in read/wirte command. A10/AP 0 1 BA 0 1 0 1 Operation Disable auto precharge,leave bank A active at end of burst. Disable auto precharge,leave bank B active at end of burst. Enable auto precharge, precharge bank A at end of burst. Enable auto precharge, precharge bank B at end of burst. 4. A10/AP and BA control bank precharge when precharge command is asserted. A10/AP BA 0 0 1 0 1 X precharge Bank A Bank B Both Banks TM Technology Inc. reserves the right to change products or specifications without notice. P.15 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616C 18 19 Power Up Sequence H ig h le v e l is n e c e ss a ry CS tR P RAS SS tR C SS SS tC C D SS SS tR C SS SS CAS SS SS ADDR SS SS SS SS K ey RAa BA SS SS SS SS K ey A 1 0 /A P SS SS SS SS K ey RAa DQ H ig h - Z WE SS SS SS SS DQM H ig h le v e l is n e c e ss a ry P rech arg e A ll B a n k s A u to R e f re sh A u to R e fr e s h M o d e R e g iste r S e t (A -B a n k ) R ow A c tiv e :D o n 't c a re TM Technology Inc. reserves the right to change products or specifications without notice. P.16 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE CS TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616C 18 19 Read & Write Cycle at Same Bank @Burst Length = 4 H IG H * N o te1 tR C tR C D RAS * N o te2 CAS ADDR Ra C a0 Rb Cb0 BA A 1 0 /A P Ra tO H Rb CL=2 RAC * N o te3 Q a0 t tS A C Q a1 tO H Q a2 Q a3 * N o te4 D b0 D b1 D b2 D b3 tR D L DQ CL=3 * N o te3 tS H Z Q a0 tS A C Q a1 Q a2 Q a3 * N o te4 D b0 D b1 D b2 D b3 tR D L tS H Z WE DQM R ow A c tiv e (A B ank ) R ead (A B ank ) P rech arg e (A B ank ) R o w A c tiv e (A -B n ak ) W rite (A B nak ) P rech arg e (a-B n ak ) : D o n 't c a r e *Note : 1. Minimum row cycle times is requiqed to complete internal DRAM operation. 2. Row precharge can interrupt burst on any cycle. [CAS Latency-1] number of valid output data is available after Row precharge. Last valid output will be Hi-Z( tSHZ) after the clock. 3. Access time from Row active command. tCC*(tRCD+CAS latency-1)+tSAC 4. Output will be Hi-Z after the end of burst.(1,2,4,8 bit burst) Burst can’t end in Full Page Mode. TM Technology Inc. reserves the right to change products or specifications without notice. P.17 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE CS TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616C 18 19 Page Read & Write Cycle at Same Bank @ Burst Length = 4 H IG H tR C D RAS * N o te2 tC C D CAS ADDR Ra C a0 Cb0 C c0 Cd0 BA A 1 0 /A P tR D L CL=2 DQ CL=3 Q a0 Q a1 Q b0 Q b1 Q b2 D c0 D c1 D d0 D d1 tCD L Q a0 Q a1 Q b0 Q b1 D c0 D c1 D d0 D d2 WE * N o te3 * N o te1 DQM R o w A c tiv e (A -B n ak ) R ead (A B nak ) R ead (A B nak ) W rite (A B nak ) W rite (A B nak ) P rech arg e (A -B n ak ) : D o n 't c a r e *Note : 1. To write data before burst read ends, DQM should be asserted three cycle prior to write command to avoid bus contention. 2. Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written. 3. DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge cycle will be masked internally. TM Technology Inc. reserves the right to change products or specifications without notice. P.18 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE * N o te1 TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616C 18 19 Page Read Cycle at Different Bank @ Burst Length = 4 H IG H CS RAS * N o te2 CAS ADDR RAa CAa RBb CBb CAc CBd CAe BA A 1 0 /A P RAa RBb CL=2 DQ CL=3 Q A a0 Q A a1 Q A a2 Q A a3 Q B b0 Q B b1 Q B b2 Q B b3 Q A c0 Q A c1 Q B d0 Q B d1 Q A e0 Q A e1 Q A a0 Q A a1 Q A a2 Q A a3 Q B b0 Q B b1 Q B b2 Q B b3 Q A c0 Q A c1 Q B d0 Q B d1 Q A e0 Q A e1 WE DQM R o w A c tiv e (A -B a n k ) R ead (A B ank ) R o w A c tiv e (B -B an k ) R ead (B B ank ) R ead (A B ank ) R ead (B B ank ) R ead (A B ank ) P rech arg e (A -B a n k ) : D o n 't c a r e *Note : 1. CS can be don’t cared when RAS , CAS and WE are high at the clock high going edge. 2. To interrupt a burst resd by row precharge, both the read and the precharge banks must be the same. TM Technology Inc. reserves the right to change products or specifications without notice. P.19 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616C 18 19 Page Write cycle at Different Bank @ Burst Length = 4 H IG H CS RAS CAS * N o te 2 ADDR RAa CAa RBb CBb CAc CBd BA A 1 0 /A P RAa RBb DQ D A a0 D A a1 D A a2 D A a3 D B b0 D B b1 D B b2 D B b3 D A c0 D A c1 D B d0 D B d1 tC D L tR D L WE * N o te 1 DQM R o w A c ti v e (A -B a n k ) R o w A c ti v e (B -B a n k ) W r it e ( A B an k ) W r it e ( B B an k ) W r it e ( A B an k ) W r it e ( B B an k ) P re c h a rg e (A -B a n k ) :D o n 't c a r e *Note : 1. To interrupt burst write by row precharge, DQM should be asserted to mask invalid input data. 2. To interrupt burst write by row precharge, both the write and the precharge banks must be the same. TM Technology Inc. reserves the right to change products or specifications without notice. P.20 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE CS TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616C 18 19 Read & Write Cycle at Different Bank @ Burst Length = 4 H IG H RAS CAS ADDR RAa CAa RBb CBb RAc CAc BA A 1 0 /A P RAa RBb RAc * N o te1 tCD L CL=2 DQ CL=3 Q A a0 Q A a1 Q A a2 Q A a3 D B b0 D B b1 D B b2 D B b3 Q A c0 Q A c1 Q A c2 Q A a0 Q A a1 Q A a2 Q A a3 D B b0 D B b1 D B b2 D B b3 Q A c0 Q A c1 WE DQM R o w A c tiv e (A -B a n k ) R ead (A B ank ) R o w A c tiv e (B -B an k ) P rech arg e (A -B a n k ) W rite (B B ank ) R o w A c tiv e (A -B a n k ) R ead (A B ank ) : D o n 't c a r e *Note : 1. tCDL should be met to complete write. TM Technology Inc. reserves the right to change products or specifications without notice. P.21 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE CS TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616C 18 19 Read & Write Cycle with Auto Precharge @ Burst Length = 4 H IG H RAS CAS ADDR Ra Rb Ca Cb BA A 1 0 /A P Ra Rb CL=2 DQ CL=3 Q a0 Q a1 Q a2 Q a3 D b0 D b1 D b2 D b3 Q a0 Q a1 Q a2 Q a3 D b0 D b1 D b2 D b3 WE DQM R o w A c tiv e (A -B a n k ) R o w A c tiv e (B -B an k ) R e a d w ith A u to p re c h a rg e (A B ank ) C L = 2 A u to P re c h a rg e S ta rt P o in t (A -B a n k ) C L = 3 A u to P re c h a rg e S ta rt P o in t (A -B a n k ) W rite w ith A u to P rech arg e (B B ank ) A u to P re c h a rg e S ta rt P o in t (A B ank ) : D o n 't c a r e *Note : 1. tCDL should be controlled to meet minimum tRAS before internal precharge start. (In the case of Burst Length = 1 & 2 and BRSW mode) TM Technology Inc. reserves the right to change products or specifications without notice. P.22 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616C 18 19 Clock suspension & DQM Operation Cycle @ CAS Latency = 2 ,Burst Length = 4 CS RAS CAS ADDR Ra Ca Cb Cc BA A 1 0 /A P Ra DQ Q a0 Q a1 Q a2 Q a3 tS H Z Q b0 Q b1 tS H Z D c0 D c2 WE * N o te 3 DQM R o w A c ti v e R ead C lo c k S u s p e n s io n R ead R ead Q D M W r it e W r it e Q D M C lo c k S u s p e n s io n W r it e Q D M : D o n 't c a r e *Note 1. DQM is needed to prevent bus contention. TM Technology Inc. reserves the right to change products or specifications without notice. P.23 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE CS TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616C 18 19 Read Interrupted by Precharge Command & Read Burst Stop Cycle @ Burst Length=Full Page H IG H RAS CAS ADDR RAa CAa CAb BA A 1 0 /A P RAa * N o te2 1 1 CL=2 DQ Q A a0 Q A a1 Q A a2 Q A a3 Q A a4 Q A b0 Q A b1 Q A b2 Q A b3 Q A b4 Q A b5 2 2 CL=3 Q A a0 Q A a1 Q A a2 Q A a3 Q A a4 Q A b0 Q A b1 Q A b2 Q A b3 Q A b4 Q A b5 WE DQM R o w A c tiv e (A -B a n k ) R ead (A B ank ) B u rst S to p R ead (A B ank ) P rech arg e (A -B a n k ) : D o n 't c a r e *Note : 1. Burst can’t end in full page mode, so auto precharge can’t issue. 2. About the valid DQs after burst stop, it is same as the case of RAS interrupt. Both cases are illustrated above timing diagram. See the lable 1,2 on them. But at burst write, burst stop and RAS interrupt should be compared carefully. Refer the timing diagram of ‘Full Page write burst stop cycle’. 3. Burst stop is valid at every burst length. TM Technology Inc. reserves the right to change products or specifications without notice. P.24 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616C 18 19 Write Interrupted by Prechareg Command & Write Burst Stop Cycle @ Burst Length=Full Page H IG H CS RAS CAS ADDR RAa CAa CAb BA A 1 0 /A P RAa tB D L tR D L * N o te 3 DQ D A a0 D A a1 D A a2 D A a3 D A a4 D A b0 D A b1 D A b2 D A b3 D A b4 D A b5 WE DQM R o w A c ti v e (A -B a n k ) W r it e ( A B an k ) B u r s t S to p W r it e ( A B an k ) P re c h a rg e (A -B a n k ) : D o n 't c a r e *Note : 1. Burst can’t end in full page mode, so auto precharge can’t issue. 2. Data-in at the cycle of interrupted by precharge can not be written into the corresponding memory cell. It is defined by AC parameter of tRDL. DQM at write interrupted by precharge command is needed to prevent invalid write. Input data after Row precharge cycle will be masked internally. 3. Burst stop is valid at every burst length. TM Technology Inc. reserves the right to change products or specifications without notice. P.25 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE CS TE CH 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 T431616C 18 19 Burst Read Single bit Write Cycle @ Burst Length = 2 H IG H RAS * N o te2 CAS ADDR RAa CAa RBb CAb RAc CBc CAd BA A 1 0 /A P RAa RBb RAc CL=2 DQ CL=3 D A a0 D A b0 D A b1 D B c0 D A d0 D A d1 D A a0 D A b0 D A b1 D B c0 D A d0 D A d1 WE DQM R o w A c tiv e (A -B a n k ) R o w A c tiv e (A -B a n k ) W rite (A B ank ) R e a d w ith A u to P rech arg e (A B ank ) R o w A c tiv e (A -B a n k ) W rite w ith A u to P rech arg e (A B ank ) R ead (A B ank ) P rech arg e (A -B a n k ) : D o n 't c a r e *Note : 1. BRSW modes is enabled by setting A9 ‘High’ at MRS (Mode Register Set). At the BRSW Mode, the burst length at write is fixed to ‘1’ regardless of programmed burst length. 2. When BRSW write command with auto precharge is executed, keep it in mind that tRAS should not be violated. Auto precharge is executed at the next cycle of burst-end, so in the case of BRSW write command, the precharge command will be issued after two clock cycle. TM Technology Inc. reserves the right to change products or specifications without notice. P.26 Publication Date: AUG. 2004 Revision: A tm CLOCK CKE TE CH 0 1 2 3 SS SS * N o te 2 T431616C 4 5 6 7 8 9 SS ts s ts s Active/ Precharge Power Down Mode @ CAS latency = 2, Butsr length = 4 10 11 12 13 14 15 16 17 18 19 ts s * N o te 1 SS * N o te 3 CS SS SS SS SS RAS SS SS SS SS CAS SS SS SS SS ADDR SS SS Ra SS SS Ca BA SS SS SS SS A 1 0 /A P SS SS Ra SS SS tSHZ DQ SS SS Q a0 Q a1 Q a2 WE SS SS SS SS DQM SS SS SS SS P re c h a r g e P o w erD o w n E n try R o w A c tiv e A c tiv e P re c h a r g e P o w erP o w erD o w n E n try D o w n E x it R ead A c tiv e P o w erD o w n E x it P re c h a r g e :D o n 't c a re *Note : 1. Both banks should be in idle state prior to entering precharge power down mode. 2. CKE should be set high at least 1CLK+tSS prior to Row active command. 3. Can not violate minimum refresh specification.(32ms) TM Technology Inc. reserves the right to change products or specifications without notice. P.27 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE CS TE CH 1 2 3 * N o te 2 T431616C 4 5 6 SS SS * N o te 4 Self Refresh Entry & Exit Cycle 7 8 9 10 11 12 13 SS t R C m in * N o te 1 * N o te 3 * N o te 6 14 15 16 17 18 19 SS SS tSS SS * N o te 5 SS SS RAS SS SS SS SS * N o te 7 CAS SS SS SS SS ADDR SS SS SS SS BA SS SS SS SS A 1 0 /A P SS SS SS SS DQ H i-z SS H i-z SS WE SS SS SS SS DQM SS SS SS SS S e lf R e fr e s h E n try S e lf R e fr e s h E x it A u to R e fre sh : D o n 't c a r e *Note : TO ENTER SELF REFRESH MODE 1. CS , RAS & CAS with CKE should be low at the same clock cycle. 2. After 1 clock cycle, all the inputs inculding the system clock can be don’t care except for CKE. 3. The device remains in self refresh mode as long as CKE stays ‘Low’. Cf.) Once the device enters self refresh mode, minimum tRAS is required before exit from self refresh. TO EXIT SELF REFRESH MODE 4. System clock restart and be stable before returning CKE high. 5. CS starts from high. 6. Minimum tRC is required after CKE going high to complete self refresh exit. 7. 2K cycle of burst auto refresh is required before self refresh entry and after self refresh exit if the system uses burst refresh. TM Technology Inc. reserves the right to change products or specifications without notice. P.28 Publication Date: AUG. 2004 Revision: A tm 0 CLOCK CKE TE CH Auto Refresh Cycle 5 6 0 1 2 3 4 5 6 SS T431616C 2 3 4 7 8 9 10 Mode Register Set Cycle 1 H IG H H IG H SS CS * N o te 2 SS tR P C SS SS RAS * N o te 1 CAS SS SS * N o te 3 ADDR K ey K ey SS SS DQ H i-z H i-z SS WE SS SS DQM SS SS M RS N ew C om m and A u to R e fre sh N ew C om m and :D o n 't c a re *Both banks precharge should be completed before Mode Register Set cycle and auto refresh cycle. MODE REGISTER SET CYCLE *Note : 1. CS , RAS , CAS & WE activation at the same clock cycle with address key will set internal mode register. 2. Minimum 2 clock cycles should be met before new RAS activation. 3. Please refer to Mode Register Set table. TM Technology Inc. reserves the right to change products or specifications without notice. P.29 Publication Date: AUG. 2004 Revision: A tm 50 TE CH T431616C PACKAGE DIMENSIONS 50 LEAD TSOPII (400 mil) D 26 -HA A2 DEFAULT A θ 2(4X) R1 E 1 E 0.21 REF R2 B ∅ 1.5 0.465 REF A1 -C1 8.78 25 -CDEFAULT A GAGE .2.5 TM Technology Inc. reserves the right to change products or specifications without notice. 291 (ZD) -Ce θ3 (4X) θ PLANE θ1 L L1 B "A" b WITH PLATING 0.10 C b SETING PLANE BASE METAL C1 C SECTION B-B b1 Symbol A A1 A2 b b1 c c1 D ZD E E1 L L1 e R1 R2 θ θ1 θ2 θ3 Min 0.05 0.95 0.30 0.30 0.12 0.10 20.82 11.56 10.03 0.40 0.12 0.12 0 0 10 10 Dimension in mm Nom 0.10 1.00 0.35 0.127 20.95 0.875 REF 11.76 10.16 0.50 0.80 REF 0.80 BSC 15 15 Max 1.20 0.15 1.05 0.45 0.40 0.21 0.16 21.08 11.96 10.29 0.60 Min 0.002 0.037 0.012 0.012 0.005 0.004 0.820 0.455 0.394 0.016 0.25 8 20 20 0.005 0.005 0 0 10 10 Dimension in inch Nom 0.004 0.039 0.014 0.005 0.825 0.034 REF 0.463 0.400 0.020 0.031 REF 0.031 BSC 15 15 Max 0.047 0.006 0.041 0.018 0.016 0.008 0.006 0.830 0.471 0.405 0.024 0.010 8 20 20 P.30 Publication Date: AUG. 2004 Revision: A