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T63H0006B-DX

T63H0006B-DX

  • 厂商:

    TMT

  • 封装:

  • 描述:

    T63H0006B-DX - Li-Ion Battery Protector - Taiwan Memory Technology

  • 数据手册
  • 价格&库存
T63H0006B-DX 数据手册
tm Features TE CH T63H0006B T63H0006B • Low supply current : operating current : 3.0uA (TYP.) Standby current : 0.15uA (TYP.) (after detecting over-discharge) • High accuracy detector Threshold : Over-charge detector (Topt=25ºC) +/- 25mV • Variety of detector threshold : -Over-charge detector threshold 4.225V to 4.375V step of 0.005V -Over-discharge detector threshold 2.4V to 2.6V step of 0.005V • Built in protection circuit : -Excess current protection 0.13V to 0.17V step of 0.04V -Accuracy ±15% • Output delay of over charge : Time delay VDD=3.6V to 4.3V 110ms (The result was measured from T63H0006B-AX) • Output delay of over-discharg : VDD=3.6V to 2.4V with built-in capacitor 10ms • Small package SOT23-6/6-pin Li-Ion Battery Protector General Description The T63H0006B is protection IC for over-charge / discharge of rechargeable one-cell Lithium-ion(Li+) excess load current, further include a short circuit protector for preventing large external short circuit current. Each of these IC is composed of three voltage detectors, a reference unit, a delay circuit, a short circuit protector, and a logic circuit. When charging voltage crosses the detector threshold from a low value to value higher than VDET1, the output of Cout pin, the output of over-charge detector/VD1, switches to low level, charger’s negative pin level. After detecting over-charge the VD1 can be reset and the output of Cout becomes high when the VDD voltage is coming down to a level lower than “VREL1”, or when a kind of loading is connected to VDD after a charger is disconnected from the battery pack while the VDD level is in between “VDET1” and “VREL1” in the T63H0006B. The output of Dout pin, the output of over-discharge detector/VD2, switches to low level after internally fixed delay time passed, when discharging voltage crosses the detector threshold from a high value lower than VDET2. After T63H0006B detect the over-discharge voltage, connect a charger to the battery pack, and when the battery supply voltage becomes higher than the over-discharge detector threshold, VD2 is released and the voltage of Dout becomes “H” level. An excess load current can be sensed and cut off after internally fixed delay time passed through the built in excess current detector, VD3 with Dout being enabled to low level. Once after detecting excess current, the VD3 is released and Dout level switches to high by detaching a battery pack from a load system. Further, short circuit protector makes Dout level to low immediately with external short circuit current and re-moving external short circuit leads Dout level to high. After detecting over-discharge, supply current will be kept extremely low by halt some internal circuits operation. The output delay of over-charge detectors can be set by connecting external capacitors. Output type of Cout and Dout are CMOS. 6-pin, SOT23-6 is available. Part Number Examples Part No. Over Over charge charge marking Pack type detection release voltage voltage 4.25V 4.35V 4.30V 4.28V …. 4.05V 4.15V 4.10V 4.08V …. 006A 006B 006C 006D SOT-23-6 SOT-23-6 SOT-23-6 SOT-23-6 …. T63H0006B-AX T63H0006B-BX T63H0006B-CX T63H0006B-DX …note Note : New model version and specific characteristics may be order by customer. TM Technology Inc. reserves the right P. 1 to change products or specifications without notice. Publication Date: JUN. 2004 Revision:B tm 5 TE CH T63H0006B BLOCK DIAGRAM V DD 4 Level S h ifte r VD1 + VD2 + D e la y S h o r t c irc u it D e te c to r VD3 6 V SS Pin Configurations 6 5 4 ( m a r k s id e ) 1 2 PIN DESCRIPTION Pin No. 1 2 3 4 5 6 Symbol Dout VCout NC VDD Vss Pin description Output of over-discharge detection, CMOS output Pin for charge negative input Output of over-charge detection, CMOS output No connection Power supply Ground TM Technology Inc. reserves the right P. 2 to change products or specifications without notice. + 1 D OUT 3 C OUT 2 V- 3 Publication Date: JUN. 2004 Revision:B tm Symbol VDD VVcout Vdout PD Topt Tstg TE CH Item Supply voltage Input voltage Output voltage Power dissipation Operating temperature range Storage temperature range Ratings -0.3 to 12 VDD-28 to VDD+0.3 VDD-28 to VDD+0.3 Vss-0.3 toVDD+0.3 150 -40 to85 -55 to 125 T63H0006B Unit V V V V mW ºC ºC ABSOLUTE MAXIMUM RATINGS (Vss=0V) Absolute Maximum ratings are threshold limit values that must not be exceeded ever for an instant under any conditions. Moreover, such values for any two items must not be reached simultaneously. Operation above these absolute maximum ratings may cause degradation or permanent damage to the device. These are stress ratings only and do not necessarily imply functional operation below these limits. ELECTRICAL CHARACTERISTIC (Temp=25ºC) Symbol VDD1 VDD2 V0inh Item Operating input voltage Operating input voltage 0V battery charge inhibition charge voltage Over-charge threshold Conditions Voltage defined as VDD to Vss Voltage defined as VDD to VApplied for 0V battery charge inhibition function -AX Detect rising edge of -BX supply voltage -CX -DX -AX -BX --CX -DX VDD=3.6V to 4.3V Detect falling edge -AX,-BX,-CX of supply voltage -DX VDD=3.6V to 2.4V Detect rising edge of “V-“ pin voltage VDD=3.0V VDD=3.0V VDD=3.0V VDD=3.6V, V-=1.0V Iol=50uA, VDD=4.4V Iol=-50uA, VDD=3.9V Iol=50uA, VDD=2.4V Iol=-50uA, VDD=3.9V VDD=3.9V, V-=0V VDD=2.0V MIN. 1.5 0.8 4.225 4.325 4.275 4.255 4.025 4.125 4.075 4.055 30 2.400 2.800 3 0.13 4 TYP. MAX. 10 28 Unit V V V V V V V V V V V ms V V ms V ms V us kOhm V V V V uA uA 1.0 4.250 4.350 4.300 4.28 4.050 4.150 4.100 4.080 110 2.500 2.900 10 0.15 11 1.2V 4.275 4.375 4.325 4.305 4.075 4.175 4.125 4.105 250 2.600 3.000 25 0.17 26 VDET1 VREL1 tVDET1 VDET2 tVDET2 VDET3 tVDET3 Vshort tshort Rshort Vol1 Voh1 Vol2 Voh2 IDD Istandby Release voltage for over-charge detection Output delay of over charge Over-discharge threshold Output delay of over-discharge Excess current threshold Output delay of excess current Short protection voltage Output delay of short protection Reset resistance for excess current protection Nch ON voltage of Cout Pch ON voltage of Cout Nch ON voltage of Dout Pch ON voltage of Dout Supply current Standby current VDD-1.5 VDD-1.1 VDD-0.5 5 80 VDD-0.5 0.4 VDD-0.5 3.0 0.15 6.0 0.3 130 50 180 0.4 TM Technology Inc. reserves the right P. 3 to change products or specifications without notice. Publication Date: JUN. 2004 Revision:B tm TE CH T63H0006B VD2/Over-Discharge Detector The VD2 is monitoring a VDD pin voltage. When the VDD voltage crosses the over-discharge detector threshold VDET2 from a high value to a value lower than the VDET2, the VD2 can sense an over-discharging and the external discharge control Nch MOSFT turns to “OFF” with the Dout pin being at “L” level. To reset the VD2 with the Dout pin level being “H” again after detecting over-discharge it is necessary to connect a charger to the battery pack for T63H0006B. When the VDD voltage stays under over-discharge detector threshold VDET2 charge current can flow through parasitic diode of external discharge control MOSFET, then after the VDD voltage comes up to a value larger than VDET2, Dout becomes “H” and discharging process would be able to advance through ON state MOSFET for discharge control. Connecting a charger to the battery pack makes the Dout level being “H” instantaneously when the VDD voltage is higher than VDET2. Besides, for T63H0006B, when a cell voltage reaches equal or more than over-discharge released voltage, or VDET2, over-discharge condition can be also released. An output delay time for the over-discharge detection is fixed internally, tVDET2 =10ms typ. At VDD=2.4V. When the VDD level is going down to a lower level than VDET2 if the VDD voltage would be back to a level higher than the VDET2 within a time period of the output delay time, VD2 would not output a signal for turning off the discharge control FET. After detection of an over-discharge by VD2, supply current would be reduced to typ. 0.15uA at VDD=2.0V and into standby, only the charger detector is operating. The output type of Dout pin is CMOS having “H” level of VDD and “L” level of Vss. OPERATION VD1/Over-Charge Detector The VD1 monitors VDD pin voltage. When the VDD voltage crosses over charge detector threshold VDET1 from a low value to a value higher than the VDET1, the VD1 can sense a over-charging and an external charge control Nch-MOS-FET turns to “OFF” with Cout pin being at “L” level. There can be two cases to reset the VD1 making the Cout pin level to “H” again after detecting over-charge. Resetting the VD1 can make charging system allowable to resumption of charging process. The first case is in such conditions that a time when the VDD voltage is coming down to a level lower than “VREL1”. While in the second case, connecting a kind of loading to VDD after disconnecting a charger from the battery pack can make the VD1 resetting when the VDD level is in between “VDET1” and “VREL1”. After detecting over-charge with the VDD voltage of higher than VDET1, connecting system load to the battery pack makes load current allowable through parasitic diode of external charge control FET. The Cout level would be high when the VDD level is coming down to a level below the VDET1 by continuous drawing of load current. When the VDD level is going up to a higher level than VDET1 if the VDD voltage would be back to a level lower than the VDET1 within a time period of the output delay time, VD1 would not output a signal for turning off the charge control FET. A level shifter incorporated in a buffer driver for the Cout pin makes the “L” level of Cout pin to the Vpin voltage and the “H” level of Cout pin is set to VDD voltage with CMOS buffer TM Technology Inc. reserves the right P. 4 to change products or specifications without notice. Publication Date: JUN. 2004 Revision:B tm TE CH Application Circuits T63H0006B + R1 100 ohm C1 0 .1 u F 4 T 63H 0006B 6 1 C2 0 .1 u F 3 R2 1 k ohm 2 5 VD3/Excess Current Detector, Short Circuit Protector Both of the excess current detector and short circuit protector can work when both control FETs are in “ON” state. When the V- pin voltage is going up to a value between the short protection voltage Vshort/VDD and excess current threshold VDET3, the excess current detector operates and further soaring of V- pin voltage higher than Vshort makes the short circuit protector enabled. This leads the external discharge control Nch MOSFET turn off with the Dout pin being at “L” level. An output delay time for the excess current detector is internally fixed, 11ms typ. At VDD=3.0V. Aquick recovery of V- pin level from a value between Vshort and VDET3 within the delay time keeps the discharge control FET staying “H” state. When the short circuit protector is enabled, the Dout would be low and its delay time would be 5us typ. The V- pin has a built-in pulled down resistor, typ. 130kOhm with connecting to the Vss pin. After an excess current or short circuit protection is detected, removing a cause of excess current or external short circuit makes an external discharge control FET to an “ON” state automatically with the V- pin level being down to the Vss level through pulled down resistor built-in internally. If VDD voltage would be higher than VDET2 at a time when the excess current is detected the T63H0006B does not enter a standby mode, or otherwise in case of lower VDD voltage than VDET2 would lead the T63H0006B into a standby. After detecting short circuit the T63H0006B will not enter a standby mode. Application Hints R1 and C1 will stabilize a supply voltage to the T63H0006B. A recommended R1 value is less than 100 Ohm. A larger value of R1 leads higher detection voltage, makes some errors, because of shoot through current flowed in the T63H0006B. R2 and C2 will stabilize a V- pin voltage. The resetting from over-discharge with connecting a charger possibly be disabled by larger value of R2. Recommended value is less than 1kOhm. After over-charge detection even connecting battery pack to a system probably could not allow a system to draw load current by a larger R2xC2 time constant in the T63H0006B. Recommended C2 value is less than 1uF. R1 and R2 may cause power consumption over rating of power dissipation of the T63H0006B and a total of “R1+R2” should be more than 1kOhm. The time constants R1xC1 or R2xC2 must have a relation as below: R1xC1
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