0770_XP152A01D8MR

Power MOS FET NP-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.48Ω (max) NUltra High-Speed Switching NSOT-23 Package ■Applications GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems ■General Description The XP152A01D8MR is a P-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-23 package makes high density mounting possible. ■Features Low on-state resistance : Rds(on)=0.48Ω(Vgs=-4.5V) : Rds(on)=0.80Ω(Vgs=-2.5V) Ultra high-speed switching Operational Voltage : -2.5V High density mounting : SOT-23 ■Pin Configuration D 3 ■Pin Assignment PIN NUMBER PIN NAME Ｇ Ｓ Ｄ FUNCTION 1 2 1 G 2 S Gate Source Drain 3 11 SOT-23 （TOP VIEW） ■Equivalent Circuit 3 ■Absolute Maximum Ratings Ta=25 : PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -20 ±12 -0.5 -1.5 -0.5 0.5 150 -55~150 UNITS V V A A A W : : 1 2 Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature P-Channel MOS FET (1 device built-in) Note: When implemented on a ceramic PCB 834 XP152A01D8MR ■Electrical Characteristics DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25 : SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=-20V, Vgs=0V Vgs=±12V, Vds=0V Id=-1mA, Vds=-10V Id=-0.3A, Vgs=-4.5V Id=-0.3A, Vgs=-2.5V Id=-0.3A, Vds=-10V If=-0.5A, Vgs=0V MIN TYP MAX -10 ±10 -0.5 0.36 0.6 1 -0.8 -1.1 0.48 0.8 UNITS µA µA V Ω Ω S V Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=-10V, Vgs=0V f=1MHz MIN TYP 180 100 35 MAX Ta=25 : UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=-5V, Id=-0.3A Vdd=-10V CONDITIONS MIN TYP 10 15 30 70 MAX Ta=25 : UNITS ns ns ns ns Thermal Characteristics PARAMETER Thermal Resistance (channel-ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a ceramic PCB MIN TYP 250 MAX UNITS :/W 11 835 XP152A01D8MR ■Typical Performance Characteristics DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE -1.5 -5V -4.5V -4V Pulse Test, Ta=25: -1.5 DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Pulse Test, Vds=-10V Drain Current:Id (A) -1 -2.5V Drain Current:Id (A) -3.5V -3V -2V -1 -0.5 -0.5 Topr＝25℃ Vgs＝-1.5V 125 0 0 -1 -2 -3 0 0 -1 -2 -3 -55℃ Drain-Source Voltage:Vds (V) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE 1.5 Pulse Test, Ta=25: 10 DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25: Drain-Source On-State Resistance :Rds (on) (Ω) 1 Id＝-0.3A -0.5A Drain-Source On-State Resistance :Rds (on) (Ω) 1 Vgs=−2.5V 0.5 −4.5V 0 0 -2 -4 -6 -8 -10 0.1 0 -0.5 -1 -1.5 Gate-Source Voltage:Vgs (V) Drain Current:Id (A) 11 Drain-Source On-State Resistance :Rds (on) (Ω) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) 1.5 Pulse Test, Ta=25: 0.6 0.4 0.2 0.0 -0.2 -0.4 -0.6 -30 0 30 60 90 120 150 GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE Vds＝-10V , Id＝-1mA 1 Vgs＝-2.5V Id＝-0.5A -0.3 0.5 -0.3A,-0.5A -4.5V 0 -60 -60 -30 0 30 60 90 120 150 Ambient Temp.:Topr (:) Ambient Temp.:Topr (:) 836 XP152A01D8MR CAPACITANCE vs. DRAIN-SOURCE VOLTAGE 1000 Vgs=0V, f=1MHz 1000 SWITCHING TIME vs. DRAIN CURRENT Vgs=-5V, Vdd≒-10V, PW=10µsec. duty≤1% tf Ciss Coss Switching Time:t (ns) Capacitance:c (pF) 100 td （off） 100 tr 10 td （on） Crss 10 0 -5 -10 -15 -20 1 -0.01 -0.1 -1 Drain-Source Voltage:Vds (V) Drain Current:Id (A) GATE-SOURCE VOLTAGE vs. GATE CHARGE -10 Vds=-10V, Id=-0.7A, Ta=25℃ REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE -3 Ta=25℃, Pulse Test Gate-Source Voltage:Vgs (V) -8 Reverse Drain Current:Idr (A) -2.5 -4.5V -6 -2 -1.5 -1 -2.5V -4 -2 Vgs=0V, 4.5V -0.5 0 0 2 4 6 8 10 0 0 -0.2 -0.4 -0.6 -0.8 -1 Gate Charge:Qg (nc) Source-Drain Voltage:Vsd (V) STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH Standardized Transition Thermal Resistance:γs(t) 1 Rth(ch-a)=250℃/W (implemented on a ceramic PCB) Single Pulse 0.1 11 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width:PW (s) 837