0782_XP161A0390PR

Power MOS FET NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.09Ω (max) NUltra High-Speed Switching NSOT-89 Package ■Applications GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems ■General Description The XP161A0390PR is an N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOT-89 package makes high density mounting possible. ■Features Low on-state resistance : Rds(on)=0.09Ω(Vgs=4.5V) : Rds(on)=0.13Ω(Vgs=2.5V) : Rds(on)=0.3Ω(Vgs=1.5V) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOT-89 ■Pin Configuration ■Pin Assignment PIN NUMBER 1 2 PIN NAME G D S FUNCTION Gate Drain Source 1 Ｇ 2 Ｄ 3 Ｓ 3 SOT-89 （TOP VIEW） 11 ■Equivalent Circuit ■Absolute Maximum Ratings Ta=25 : PARAMETER Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 ±8 3 9 3 2 150 -55~150 UNITS V V A A A W : : 1 2 N-Channel MOS FET (1 device built-in) 3 Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Note: When implemented on a ceramic PCB 858 XP161A0390PR ■Electrical Characteristics DC Characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25 : SYMBOL Idss Igss Vgs(off) Rds(on) CONDITIONS Vds=20V, Vgs=0V Vgs=±8V, Vds=0V Id=1mA, Vds=10V Id=1.5A, Vgs=4.5V Id=1.5A, Vgs=2.5V Id=1.5A, Vgs=1.5V Id=1.5A, Vds=10V If=3A, Vgs=0V MIN TYP MAX 10 ±10 0.5 0.07 0.1 0.17 6 0.85 1.1 0.09 0.13 0.3 UNITS µA µA V Ω Ω Ω S V Yfs Vf Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=10V, Vgs=0V f=1MHz MIN TYP 380 170 60 MAX Ta=25 : UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=5V, Id=1.5A Vdd=10V CONDITIONS MIN TYP 10 15 70 40 MAX Ta=25 : UNITS ns ns ns ns Thermal Characteristics PARAMETER Thermal Resistance (channel-ambience) SYMBOL Rth (ch-a) CONDITIONS Implement on a ceramic PCB MIN TYP 62.5 MAX UNITS ˚C/W 11 859 XP161A0390PR ■Typical Performance Characteristics DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE 9 5V 4.5V 4V Topr＝25 ℃ 3.5V 3V 2.5V 1.5V 3 Pulse Test, Ta=25: 2V 9 DRAIN CURRENT vs. GATE-SOURCE VOLTAGE Pulse Test, Vds=10V Drain Current:Id (A) Drain Current:Id (A) 6 6 -55 ℃ 125 ℃ 3 Vgs＝1V 0 0 1 2 3 0 0 1 2 3 Drain-Source Voltage:Vds (V) Gate-Source Voltage:Vgs (V) DRAIN-SOURCE ON-STATE RESISTANCE vs. GATE-SOURCE VOLTAGE 0.2 Pulse Test, Ta=25: 1 DRAIN-SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT Pulse Test, Ta=25: Drain-Source On-State Resistance :Rds (on) (Ω) Drain-Source On-State Resistance :Rds (on) (Ω) 0.15 Vgs＝1.5V 0.1 Id＝1.5V 3V 0.1 2.5V 4.5V 0.05 0 0 2 4 6 8 0.01 0 3 6 9 Gate-Source Voltage:Vgs (V) Drain Current:Id (A) 11 Drain-Source On-State Resistance :Rds (on) (Ω) DRAIN-SOURCE ON-STATE RESISTANCE vs. AMBIENT TEMPERATURE Pulse Test GATE-SOURCE CUT-OFF VOLTAGE VARIANCE vs. AMBIENT TEMPERATURE 0.6 Vds＝10V , Id＝1mA Gate-Source Cut-Off Voltage Variance :Vgs (off) Variance (V) 150 0.4 0.4 0.2 0 -0.2 0.3 Id＝1.5A 0.2 Vgs＝1.5V 2.5V 0.1 1.5A,3A 4.5V 0 -60 -30 0 30 60 90 120 1.5A,3A -0.4 -0.6 -60 -30 0 30 60 90 120 150 Ambient Temp.:Topr (:) Ambient Temp.:Topr (:) 860 XP161A0390PR CAPACITANCE vs. DRAIN-SOURCE VOLTAGE 10000 Vgs=0V, f=1MHz SWITCHING TIME vs. DRAIN CURRENT 1000 Vgs=5V, Vdd≒10V, PW=10µsec. duty≤1% Switching Time:t (ns) tf 100 td （off） td （on） 10 tr Capacitance:C (pF) 1000 Ciss 100 Coss Crss 10 0 5 10 15 20 1 0.1 1 10 Drain-Source Voltage:Vds (V) Drain Current:Id (A) GATE-SOURCE VOLTAGE vs. GATE CHARGE 5 Vds=10V, Id=3A 9 REVERSE DRAIN CURRENT vs. SOURCE-DRAIN VOLTAGE Pulse Test Gate-Source Voltage:Vgs (V) Reverse Drain Current:Id (A) 4 Vgs＝4.5V 6 2.5V 1.5V 3 0,-4.5V 3 2 1 0 0 2 4 6 8 10 0 0 0.2 0.4 0.6 0.8 1 Gate Charge:Qg (nc) Source-Drain Voltage:Vsd (V) STANDARDIZED TRANSITION THERMAL RESISTANCE vs. PULSE WIDTH Standardized Transition Thermal Resistance:γs(t) 10 Rth (ch-a)=62.5˚C/W, (Implemented on a ceramic PCB) 1 11 Single Pulse 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width:PW (sec) 861