1106_XB15A402

PIN DIODE NSmall Insertion Loss NHigh Isolation NHigh Power Handling ■Applications GHigh Power Antenna Switch (25W output two-way radio) ■General Description The XB15A402 PIN diode employs a high reliability glass package that is designed for solid state antenna switches used in commercial two-way radios. ■Dimensions MAX 5.0 MAX 4.2 Unit : mm MAX 2.8 MIN 28 MIN 28 JEDEC DO-41 ■Absolute Maximum Ratings SYMBOL V RM I FSM * P Tj Tstg * t = 5sec PARAMETER Repetitive Peak Reverse Voltage Forward Surge Current Power Dissipation Junction Temperature Storage Temperature RATINGS 270 2 1 175 -55 ~ 175 TYP 0.8 Ta=25 OC UNITS V A W O O C C ■Electrical Characteristics Ta=25 OC SYMBOL I R1 I R2 IF Ct r fs fc PARAMETER Reverse Current Forward Current Diode Capacitance Forward Series Resistance Cut-off Frequency TEST CONDITIONS MIN V R = 270V V R = 200V V F = 1.0V V R = 12V, f = 1MHz I F = 50mA, f = 470MHz V R = 12V, f = 50MHz 1.0 500 2.0 0.5 3.0 0.7 LIMITS TYP MAX 10 150 µA nA mA pF Ω GHz UNITS 15 1059 XB15A402 FORWARD CURRENT vs. FORWARD VOLTAGE 1.E+00 1.E-07 REVERSE CURRENT vs. REVERSE VOLTAGE 100℃ 75℃ 50℃ 1.E-01 25℃ 1.E-08 100℃ 75℃ 50℃ ＩF(A) 1.E-02 25℃ 0℃ 1.E-03 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 ＩR(A) 1.E-09 1.E-10 1.E+00 1.E+01 1.E+02 1.E+03 ＶF(V) ＶR(V) FORWARD SERIES RESISTANCE vs. FORWARD CURRENT 1.E+01 f =470MHz, Ta =25℃ DIODE CAPACITANCE vs. REVERSE VOLTAGE 1.E+01 f =1MHz, Ta =25℃ ｒ ｓ(Ω) ｆ Ｃ ｔ(pF) 1.E+00 1.E+00 1.E-01 1.E-03 1.E-02 1.E-01 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 ＩF(A) ＶR(V) Q vs. REVERSE VOLTAGE 1.E+03 f =50MHz, Ta =25℃ 1.E+02 Ｑ 1.E+01 1.E+00 1.E+00 15 1.E+01 1.E+02 ＶR(V) 1060