XBS104V14R-G
ETR1610-002
Schottky Barrier Diode, 1A, 40V Type
■FEATURES
■APPLICATIONS
Forward Voltage
: VF=0.365V (TYP.)
●Rectification
Forward Current
: IF(AV)=1A
●Protection against reverse connection of battery
Repetitive Peak Reverse Voltage
: VRM=40V
Environmentally Friendly
: EU RoHS Compliant, Pb Free
■PACKAGING INFORMATION
■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
SYMBOL
RATINGS
UNIT
Repetitive Peak Reverse Voltage
VRM
40
V
VR
40
V
IF(AV)
1
A
IFSM
20
A
Tj
125
℃
Tstg
-55～+150
℃
Reverse Voltage (DC)
Forward Current (Average)
Non Continuous
Forward Surge Current
*1
Junction Temperature
Storage Temperature Range
*1： Non continuous high amplitude 60Hz half-sine wave.
* When the IC is operated continuously under high load conditions such as high temperature,
Cathode Bar
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
■MARKING RULE
SOD-123A
①: 0 (Product Number)
Unit : mm
②: Assembly Lot Number
■PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS104V14R-G
SOD-123A(Halogen & Antimony free)
XBS104V14R
SOD-123A
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
■ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time
*2
*2：trr measurement circuit
TEST CONDITIONS
Ta=25℃
LIMITS
MIN.
TYP.
MAX.
UNIT
VF1
IF=100mA
-
0.23
0.315
V
VF2
IF=500mA
-
0.30
0.385
V
VF3
IF=1A
-
0.365
0.41
V
IR
VR=40V
-
0.25
2
mA
Ct
VR=1V , f=1MHz
-
150
-
pF
trr
IF=IR=10mA , irr=1mA
-
41
-
ns
Bias
Pulse Generatrix
Device Under test
Oscilloscope
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XBS104V14R-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
100
1
Reverse Current: IR (mA)
Reverse Current IR (mA)
Ta=125℃
Forward
Current: IFF (A)
Forward Current I
(A)
-25℃
75℃
0.1
25℃
0.01
0.001
Ta=100℃
10
75℃
1
0.1
25℃
0.01
0.001
0
0.2
0.4
0.6
0
Forward
VF (V)
ForwardVoltage:
Voltage V
F (V)
10
20
30
40
Reverse
VRR(V)
(V)
ReverseVoltage:
Voltage V
(3) Forward Voltage vs. Operating Temperature
(4) Reverse Current vs. Operating Temperature
0.6
100
0.4
IF =1A
0.2
0.5A
Reverse Current: IR (μA)
Reverse Current IR (uA)
Forward
VF (V)
ForwardVoltage:
Voltage V
F (V)
VR=10V
0.1A
0.0
5V
1V
10
1
0.1
0.01
0.001
-50
0
50
100
150
0
Operating
Ta (℃)
OperatingTemperature:
Temperature Ta
(℃)
150
(6) Average Forward Current vs. Operating Temperature
2.0
Average Forward Current: IFAV (A)
Average Forward Current IFAV (A)
500
Inter-Terminal
Capacity:
Ct (pF)
Inter-Terminal
Capacity Ct
(pF)
100
Operating
Ta (℃)
Operating Temperature:
Temperature Ta
(℃)
(5) Inter-Terminal Capacity vs. Reverse Voltage
400
300
200
100
1.5
1.0
0.5
0.0
0
0
10
20
30
Reverse
VR (V)
ReverseVoltage:
Voltage V
R (V)
2/3
50
40
0
50
100
Operating Temperature Ta
(℃)
Operating
Temperature: Ta (℃)
150
XBS104V14R-G
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics.
Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
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