XBZ02P1201-G
ETR39003-001
Zener Diode
■FEATURES
■APPLICATIONS
Environmentally Friendly
●Voltage Regulation
: EU RoHS Compliant, Pb Free
■ PACKAGING INFORMATION
■PRODUCT NAME
PRODUCT NAME
PACKAGE
ORDER UNIT
XBZ02P1201-G *
SOD-523P
5,000/Reel
Unit : inch (mm)
●SOD-523P
* The “-G” suffix denotes Halogen and Antimony free as well as
being fully EU RoHS compliant
■MARKING
■ ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
SYMBOL
RATINGS
UNIT
Power Dissipation
Pd
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55 to +150
℃
(*1)
200
(*1)
mW
PCB mounted
■ELECTRICAL CHARACTERISTICS
Ta=25℃
PARAMETER
Zener Voltage
Zener Impedance
Reverse Current
SYMBOL
TEST CONDITIONS
LIMITS
MIN.
TYP.
MAX.
UNIT
VZ
IZT=5mA
11.4
12
12.6
V
ZZT1
IZT=5mA
-
-
25
Ω
ZZT2
IZT=1mA
-
-
150
Ω
IR
VR=8.0V
-
-
0.1
μA
1/5
XBZ02P1201-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Zener Current vs. Zener Voltage
(2) Forward Current vs. Forward Voltage
100
5
Ta=125℃
4
Forward Current: IF (mA)
Zenner Current: IZ (mA)
Ta=25℃
3
2
1
0
75℃
10
25℃
1
-25℃
0
0
3
6
9
12
15
0
0.4
0.8
1.2
Forward Voltage: VF (V)
Zener Voltage: VZ (V)
(3) Terminal Capacitance vs. Reverse Voltage
(4) Power Dissipation vs. Operating Temperature
400
50
40
Power Dissipation: Pd (mW)
Terminal Capacitance: Ct (pF)
Ta=25℃
30
20
10
0
300
200
100
0
0
2
4
6
8
Reverse Voltage: VR (V)
0
50
100
150
200
Operating Temperature: Ta (℃)
■NOTES ON USE
1. Please use this IC within the absolute maximum ratings.
Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and thermal stress may
cause reliability degradation of the IC.
2. Torex places an importance on improving our products and their reliability.
We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems.
2/5
XBZ02P1201-G
■REFERENCE PATTERN LAYOUT
●SOD-523P
Unit : inch (mm)
3/5
XBZ02P1201-G
■TAPING SPECIFICATIONS
●SOD-523P
4/5
SYMBOL
mm
D0
1.50 ± 0.10
D1
0.50 ± 0.25
E
1.75 ± 0.10
F
3.50 ± 0.05
P0
4.00 ± 0.10
P1
4.00 ± 0.10
P2
2.00 ± 0.05
W
8.00
+ 0.3
- 0.15
XBZ02P1201-G
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics.
Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
5/5
很抱歉,暂时无法提供与“XBZ02P1201-G”相匹配的价格&库存,您可以联系我们找货
免费人工找货