XC6109 Series
ETR0206_006
Voltage Detector with External Delay Type Capacitor
■GENERAL DESCRIPTION
The XC6109 series is highly precise, low power consumption voltage detector, manufactured using CMOS and laser trimming
technologies.
With the built-in delay circuit, connecting the delay capacitance pin to the capacitor enables the IC to provide an arbitrary
release delay time.
Using a small package (SSOT-24), the series is suited for high density mounting.
Both CMOS and N-channel open drain output configurations are available.
■APPLICATIONS
■FEATURES
●Microprocessor reset circuitry
Highly Accurate
: +2%
(Setting Voltage Accuracy>1.5V)
●Charge voltage monitors
: +30mV
●Memory battery back-up switch circuits
●Power failure detection circuits
(Setting Voltage Accuracy VDF), therefore, the output voltage maintains the
“High”(=VIN) level.
●Release Delay Time Chart
Delay Capacitance [Cd]
(μF)
0.01
0.022
0.047
0.1
0.22
0.47
1
Release Delay Time [tDR] (TYP.)
(ms)
13.8
30.4
64.9
138
304
649
1380
Release Delay Time [tDR] (MIN. ~ MAX.) *1
(ms)
11.0 ~ 16.6
24.3 ~ 36.4
51.9 ~ 77.8
110 ~ 166
243~ 364
519 ~ 778
1100 ~ 1660
* The release delay time values above are calculated by using the formula (2).
*1: The release delay time (tDR) is influenced by the delay capacitance Cd.
7/14
XC6109 Series
■OPERATIONAL EXPLANATION (Continued)
Figure 1: Typical application circuit example
The circuit which uses the delay
Capacitance pin as power input.
VIN
M2
RSEN=R1+R2+R3
M4
R1
-
VOUT
Rdelay
R2
+
VIN
Vref
M5
R3
M3
M1
Cd
VSS
Delay Capacitor [Cd]
N-ch transictor for the delay
Capacitance discharge.
Cd
Figure 2: The timing chart of Figure 1
VIN
Input Voltage: VIN
Release Voltage: V
VDF+VHYS
DF+VHYS
Detect Voltage: VDF
Minimum Operating Voltage (0.7V)
Delay Capacitance Pin Voltage:V
VCD
CD
VTCD
Delay Capacitance Pin Threshold Voltage: VTCD
Output Pin Voltage: V
VOUT
OUT
①
③
②
8/14
④
⑤
⑦
⑥
⑧
XC6109
Series
■NOTES ON USE
1. Use this IC within the stated maximum ratings. Operation beyond these limits may cause degrading or permanent
damage to the device.
2. The input pin voltage drops by the resistance between power supply and the VIN pin, and by through current at
operation of the IC. At this time, the operation may be wrong if the input pin voltage falls below the minimum operating
voltage range. In CMOS output, for output current, drops in the input pin voltage similarly occur. Oscillation of the
circuit may occur if the drops in voltage, which caused by through current at operation of the IC, exceed the hysteresis
voltage. Note it especially when you use the IC with the VIN pin connected to a resistor.
3. Note that a rapid and high fluctuation of the input pin voltage may cause a wrong operation.
4. Power supply noise may cause operational function errors, Care must be taken to put the capacitor between VIN-GND
and test on the board carefully.
5. When there is a possibility of which the input pin voltage falls rapidly (e.g.: 6.0V to 0V) at release operation with the
delay capacitance pin (Cd) connected to a capacitor, use a schottky barrier diode connected between the VIN pin and
the Cd pin as the Figure 3 shown below.
6. When N-ch open drain output is used, output voltages VOUT at voltage detection and release are determined by a pull-up
resistor tied to the output pin. A resistance value of the pull-up resistor can be selected with referring to the followings.
(Refer to Figure 4)
During detection, the formula is given as
VOUT=Vpull/(1+Rpull/RON)
where Vpull is pull-up voltage and RON (*1) is ON resistance of N-ch driver M5 (RON=VDS/IOUT1 from the electrical
characteristics table).
For example, when VIN=2.0V (*2), RON = 0.5/0.8×10-3=625Ω(MIN.) and if you want to get VOUT less than 0.1V when
Vpull=3.0V, Rpull can be calculated as follows;
Rpull=(Vpull /VOUT-1)×RON=(3/0.1-1)×625≒18kΩ
Therefore, pull-up resistance should be selected 18kΩ or higher.
(*1) VIN is smaller, RON is bigger
(*2) For the calculation, the lowest VIN should be used among of the VIN range
During release, the formula is given as
VOUT=Vpull/(1+Rpull/Roff)
where Vpull is pull-up voltage Roff is OFF resistance of N-ch driver M5 (Roff=VOUT/ILEAK=15MΩ from the
electrical characteristics table)
For examples, if you want to get VOUT larger than 5.99V when Vpull is 6.0V, Rpull can be calculated as follows;
Rpull=(Vpull/VOUT-1)×Roff=(6/5.99-1)×15×106≒25kΩ
Therefore, pull-up resistance should be selected 25kΩ or below.
(No resistor needed
for CMOS output
products)
Figure 3: Circuit example with the delay capacitance pin
(Cd) connected to a schottky barrier diode
Note: Roff=VOUT/ILEAK
Figure 4: Circuit example of XC6109N Series
9/14
XC6109 Series
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Supply Current vs. Input Voltage
(2) Detect Voltage vs. Ambient Temperature
XC6109x25A N
XC6109x25A N
2.0
2.55
Detect Voltage: VDF (V)
Supply Current: ISS (μA)
Ta=85℃
1.5
25℃
1.0
-40℃
0.5
0.0
2.50
2.45
0
1
2
3
4
5
6
-50
-25
Input V oltage: V IN (V )
0
25
50
75
100
A mbient Temperature: Ta ( ℃ )
(3) Hysteresis Voltage vs. Ambient Temperature
XC6109x25A N
Hysteresis Voltage :
VHYS (V)
0.20
0.15
0.10
0.05
-50
-25
0
25
50
75
100
A mbient Temperature: Ta ( ℃ )
(4) Output Voltage vs. Input Voltage
XC6109C25A N
No Pull-up
4.0
XC6109N25AN
Output Voltage: VOUT (V)
Pull-up=V IN R=100kΩ
4.0
Output Voltage: VOUT (V)
3.0
Ta=85℃
25℃
-40℃
2.0
1.0
0.0
-1.0
0
10/14
0.5
1
1.5
2
Input V oltage: V IN (V )
2.5
3
3.0
Ta=85℃
2.0
25℃
1.0
-40℃
0.0
-1.0
0
0.5
1
1.5
2
2.5
Supply
Voltage:
Input
Voltage:
VINVIN
(V) (V)
3
XC6109
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(5) Output Current vs. Input Voltage
XC6109C08A N
XC6109x50A N
VDS(N-ch)=0.5V
Ta=-40℃
3.0
25℃
2.0
85℃
1.0
VDS(P-ch)=0.5V
0.0
Output Current: IOUT (mA)
Output Current: IOUT (mA)
4.0
Ta=85℃
-0.5
-1.0
25℃
-1.5
-2.0
0.0
0
1
2
3
4
5
0
6
1
Input Voltage: V IN (V )
(6) Cd Pin Sink Current vs. Input Voltage
Delay Resistance: Rdelay
(MΩ )
Cd Pin Sink Current: ICD (mA)
4
Ta=-40℃
25℃
1.5
1.0
85℃
0.5
0.0
3.5
3
2.5
2
1.5
1
-50
0
1
2
3
4
Input V oltage: V IN (V )
5
6
(8) Release Delay Time vs. Delay Capacitance
-25
25
50
75
100
(9) Detect Delay Time vs. Delay Capacitance
XC6109xxxA N
VIN(MIN.)=0.7V,VIN(MAX.)=6.0V
VIN(MIN.)=0.7V, VIN(MAX.)=6.0V
100
10
1
0.001
0.01
0.1
Delay Capacitance: Cd (μF)
1
Tf=5μs, Ta=25℃
100000
Detect Delay Time: TDF (μs)
Tr=5μs, Ta=25℃
1000
0.1
0.0001
0
Ambient Temperature: Ta (℃ )
XC6109xxxA N
10000
6
V CD=0.0V VIN=6.0V
VDS=0.5V
2.0
5
XC6109xxxAN
3.0
2.5
2
3
4
Input V oltage: V IN (V )
(7) Delay Resistance vs. Ambient Temperature
XC6109x50A N
Release Delay Time: TDR (ms)
-40℃
10000
1000
100
10
1
0.0001
0.001
0.01
0.1
1
Delay Capacitance: Cd (μF)
11/14
XC6109 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(10) Leak Current vs. Ambient Temperature
(11) Leak Current vs. Output Voltage
XC6109N25AN
XC6109N25AN
VIN=6.0V
0.25
0.25
Leak Current: ILEAK (μA)
Leak Carrent: ILEAK ( μ A)
V IN=6.0V V OUT=6.0V
0.20
0.15
0.10
-50
-25
0
25
50
75
Ambient Temperature: Ta (℃ )
12/14
100
0.20
0.15
0.10
0
1
2
3
4
5
Output Voltage: VOUT (V)
6
XC6109
Series
■PACKAGING INFORMATION
●SSOT-24
■MARKING RULE
●SSOT-24
4
3
① Represents output configuration and integer number of detect voltage
CMOS output (XC6109C Series)
N-ch Open Drain output (XC6109N Series)
MARK VOLTAGE (V)
①
1
②
④
2
SSOT-24
(TOP VIEW)
A
B
C
D
E
F
0.x
1.x
2.x
3.x
4.x
5.x
PRODUCT SERIES
MARK VOLTAGE (V)
XC6109C0xxNx
XC6109C1xxNx
XC6109C2xxNx
XC6109C3xxNx
XC6109C4xxNx
XC6109C5xxNx
K
L
M
N
P
R
0.x
1.x
2.x
3.x
4.x
5.x
PRODUCT SERIES
XC6109N0xxNx
XC6109N1xxNx
XC6109N2xxNx
XC6109N3xxNx
XC6109N4xxNx
XC6109N5xxNx
②Represents decimal number of detect voltage
MARK
VOLTAGE (V)
PRODUCT SERIES
N
P
R
S
T
U
V
X
Y
Z
x.0
x.1
x.2
x.3
x.4
x.5
x.6
x.7
x.8
x.9
XC6109xx0xNx
XC6109xx1xNx
XC6109xx2xNx
XC6109xx3xNx
XC6109xx4xNx
XC6109xx5xNx
XC6109xx6xNx
XC6109xx7xNx
XC6109xx8xNx
XC6109xx9xNx
④Represents production lot number
0 to 9, A to Z or inverted characters of 0 to 9, A to Z repeated/
(G, I, J, O, Q, W excluded)
13/14
XC6109 Series
1. The products and product specifications contained herein are subject to change without
notice to improve performance characteristics.
Consult us, or our representatives
before use, to confirm that the information in this datasheet is up to date.
2. We assume no responsibility for any infringement of patents, patent rights, or other
rights arising from the use of any information and circuitry in this datasheet.
3. Please ensure suitable shipping controls (including fail-safe designs and aging
protection) are in force for equipment employing products listed in this datasheet.
4. The products in this datasheet are not developed, designed, or approved for use with
such equipment whose failure of malfunction can be reasonably expected to directly
endanger the life of, or cause significant injury to, the user.
(e.g. Atomic energy; aerospace; transport; combustion and associated safety
equipment thereof.)
5. Please use the products listed in this datasheet within the specified ranges.
Should you wish to use the products under conditions exceeding the specifications,
please consult us or our representatives.
6. We assume no responsibility for damage or loss due to abnormal use.
7. All rights reserved. No part of this datasheet may be copied or reproduced without the
prior permission of TOREX SEMICONDUCTOR LTD.
14/14