XC6601 Series
Low Voltage Input LDO Voltage Regulators
■FEATURES
Bias Voltage Range
Maximum Output Current Dropout Voltage
: 400mA (Limiter 550mA TYP.) : 38mV@IOUT=100mA (TYP.) (at VBIAS - VOUT=2.4V) : 2.5V ~ 6.0V
(VBIAS - VOUT≧1.2V)
Input Voltage Range Output Voltage Range Output Voltage Accuracy
: 1.0V ~ 3.0V (VIN≦VBIAS) : 0.7V ~ 1.8V (0.05V increments)
1/32
XC6601 Series
■PIN CONFIGURATION
●USP-6C ●SOT-25
VOUT 5 CE 4
●SOT-89-5
1 VIN
*The heat dissipation pad of the USP-6C
2 VBIAS SOT-25 (TOP VIEW)
3 VSS
package is recommended to solder as the recommended mount pattern and metal mask pattern for mounting strength. This pad should be electrically opened or connected to the VBIAS (No.1) pin.
■PIN ASSIGNMENT
PIN NUMBER USP-6C 1 3 4 2 6 SOT-25 2 1 5 3 4 SOT-89-5 2 4 5 3 1 PIN NAME VBIAS VIN VOUT VSS CE FUNCTION Power Supply Input Driver Transistor Input Output Ground ON/OFF Control
■PRODUCT CLASSIFICATION
●Ordering Information XC6601①②③④⑤⑥
MARK ① ②③ DESCRIPTION Type of Regulators Output Voltage Output Voltage Accuracy SYMBOL A B 07 ~ 18 1 B M ⑤ Packages E P R L DESCRIPTION : CE High Active, Pull-Down Resistor Built-in, CL Auto Discharge Function : CE High Active, No Pull-Down Resistor Built-in, CL Auto Discharge Function : e.g.) VOUT(T)=1.2V⇒②=1,③=2 : 100mV increments, ±20mV accuracy e.g.) 1.2V⇒②=1,③=2,④=1 : 50mV increments, ±20mV accuracy e.g.) 1.25V⇒②=1,③=2,④=B : SOT-25 : USP-6C : SOT-89-5 : Embossed Tape (Standard Feed) : Embossed Tape (Reverse Feed)
④
⑥
Device Orientation
2/32
XC6601
Series
■BLOCK DIAGRAMS
(1) XC6601A Series
(2) XC6601B Series
*Diodes inside the circuit are an ESD protection diode and a parasitic diode.
3/32
XC6601 Series
■MAXIMUM ABSOLUTE RATINGS
Ta=25 ℃
PARAMETER Bias Voltage Input Voltage Output Current Output Voltage CE Input Voltage USP-6C Power Dissipation SOT-25 SOT-89-5 Pd SYMBOL VBIAS VIN IOUT VOUT VCE RATINGS VSS-0.3 ~ +7.0 VSS-0.3 ~ +7.0 700 (*1) VSS-0.3 ~ VBIAS+0.3 VSS-0.3 ~ VIN+0.3 VSS-0.3 ~ +7.0 100 1000 (PCB mounted) *2 250 600 (PCB mounted) *2 500 1300 (PCB mounted) *2 -40 ~ +85 -55 ~ +125 UNITS V V mA V V
mW
Operating Temperature Range Topr ℃ Storage Temperature Range Tstg ℃ (*1) IOUT=Less than Pd / (VIN-VOUT) (*2) The power dissipation figure shown is PCB mounted. Please refer to pages 28~30 for details.
4/32
XC6601
Series
PARAMETER
SYMBOL
CONDITIONS
MIN.
TYP.
MAX.
UNITS
5/32
XC6601 Series
6/32
XC6601
Series
■DROPOUT VOL AGE CHART
NOMINAL OUTPUT VOLTAGE (V) VOUT(T) 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 1.75 1.80 E-1 DROPOUT VOLTAGE 1 (mV) Vdif 1 VBIAS=3.3 (V) VBIAS=3.6 (V) VBIAS=4.2 (V) Vgs Vdif(mV) Vgs Vdif(mV) Vgs Vdif(mV) (V) TYP. MAX. (V) TYP. MAX. (V) TYP. MAX. 2.60 2.55 2.50 2.45 2.40 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 1.55 1.50 35 36 38 40 41 42 43 46 48 51 54 57 300 250 200 150 100 61 63 65 68 72 75 81 87 92 2.90 2.85 2.80 2.75 2.70 2.65 2.60 2.55 2.50 2.45 2.40 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 33 34 34 35 36 38 40 41 42 43 46 48 300 250 200 150 100 56 58 59 61 63 65 68 72 75 3.50 3.45 3.40 3.35 3.30 3.25 3.20 3.15 3.10 3.05 3.00 2.95 2.90 2.85 2.80 2.75 2.70 2.65 2.60 2.55 2.50 2.45 2.40 30 31 31 32 32 32 33 34 34 35 36 38 300 250 200 150 100 50 49 50 51 52 53 54 56 58 59
VBIAS=3.0 (V) Vdif(mV) Vgs(*1) (V) TYP. MAX. 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 1.55 1.50 1.45 1.40 1.35 1.30 1.25 1.20 40 41 42 43 46 48 51 54 57 61 63 67 70 74 79 300 250 200 150 100 68 72 75 81 87 92 94 97 104 113 131 154
VBIAS=5.0 (V) Vgs Vdif(mV) (V) TYP. MAX. 4.30 4.25 4.20 4.15 4.10 4.05 4.00 3.95 3.90 3.85 3.80 3.75 3.70 3.65 3.60 3.55 3.50 3.45 3.40 3.35 3.30 3.25 3.20 27 28 28 28 29 29 29 30 30 31 31 32 300 250 200 150 100 50 44 45 46 47 47 48 48 49 49
B *1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of V -V (T).
OUT
7/32
XC6601 Series
E-2 NOMINAL OUTPUT VOLTAGE (V) VOUT (T) 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 1.65 1.70 DROPOUT VOLTAGE 2 (mV) Vdif 2 VBIAS =3.0(V) Vgs (V)
(*1)
VBIAS =3.3(V) Vgs (V) 2.60 2.55 2.50 2.45 2.40 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 Vdif(mV) TYP. 74 76 78 81 85 88 90 96 101 108 115 MAX. 300 250 200 150 117 123 127 131 139 146 154 170 179
VBIAS =3.6(V) Vgs (V) 2.90 2.85 2.80 2.75 2.70 2.65 2.60 2.55 2.50 2.45 2.40 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 Vdif(mV) TYP. 68 70 72 74 76 78 81 85 88 90 96 MAX. 300 250 200 150 110 111 114 117 123 127 131 139
VBIAS =4.2(V) Vgs (V) 3.50 3.45 3.40 3.35 3.30 3.25 3.20 3.15 3.10 3.05 3.00 2.95 2.90 2.85 2.80 2.75 2.70 2.65 2.60 Vdif(mV) TYP. 62 63 63 64 65 67 68 70 72 74 76 MAX. 300 250 200 150 100 98 101 103 106 108 110 111 . 114
VBIAS =5.0(V) Vgs (V) 4.30 4.25 4.20 4.15 4.10 4.05 4.00 3.95 3.90 3.85 3.80 3.75 3.70 3.65 3.60 3.55 3.50 3.45 3.40 Vdif(mV) TYP. 57 58 58 58 59 59 60 61 62 63 MAX. 300 250 200 150 100 88 90 91 92 93 94 95 97 0
Vdif(mV) TYP. 81 85 88 90 96 101 108 115 122 129 135 145 154 MAX. 300 250 200 150 131 139 146 154 170 179 192 197 206 223 248
2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 1.55 1.50 1.45 1.40 1.35 1.30
2.55 146 1 2.50
3.35 9 63 3.30
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XC6601
Series
E-3 NOMINAL OUTPUT VOLTAGE (V) VOUT (T) 0.70 0.75 0.80 0.85 0.90 0.95 1.00 1.05 1.10 1.15 1.20 1.25 1.30 1.35 1.40 1.45 1.50 1.55 1.60 DROPOUT VOLTAGE 3 (mV) Vdif 3 VBIAS =3.0(V) Vgs (V)
(*1)
VBIAS =3.3(V) Vgs (V) 2.60 2.55 2.50 2.45 2.40 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 Vdif(mV) TYP. 115 117 119 130 134 138 145 153 161 173 MAX. 300 250 200 181 190 197 204 216 227 239 264
VBIAS =3.6(V) Vgs (V) 2.90 2.85 2.80 2.75 2.70 2.65 2.60 2.55 2.50 2.45 2.40 2.35 2.30 2.25 2.20 2.15 2.10 2.05 2.00 Vdif(mV) TYP. 107 109 111 115 117 119 130 134 138 145 MAX. 300 250 200 167 170 176 181 190 197 204 216
VBIAS =4.2(V) Vgs (V) 3.50 3.45 3.40 3.35 3.30 3.25 3.20 3.15 3.10 3.05 3.00 2.95 2.90 2.85 2.80 2.75 2.70 2.65 2.60 Vdif(mV) TYP. 95 96 97 98 101 105 107 109 111 MAX. 300 250 200 150 148 151 153 155 159 163 167
VBIAS =5.0(V) Vgs (V) 4.30 4.25 4.20 4.15 4.10 4.05 4.00 3.95 3.90 3.85 3.80 3.75 3.70 3.65 3.60 3.55 3.50 3.45 Vdif(mV) TYP. 89 90 90 91 92 93 93 94 95 MAX. 300 250 200 150 132 134 137 139 140 141 142
Vdif(mV) TYP. 130 134 138 145 153 161 173 184 196 209 222 MAX. 300 250 200 204 216 227 239 264 289 313 323 344
2.30 2.25 2.20 2.15 2.10 2.05 2.00 1.95 1.90 1.85 1.80 1.75 1.70 1.65 1.60 1.55 1.50 1.45 1.40
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XC6601
Series
■OPERATIONAL EXPLANATION
The voltage divided by resistors R1 & R2 is compared with the internal reference voltage by the error amplifier. The N-channel MOSFET which is connected to the VOUT pin is then driven by the subsequent output signal. The output voltage at the VOUT pin is controlled & stabilized by a system of negative feedback. VBIAS pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. When output current increase, the VBIAS pin supplies output current also. VIN pin is connected to a driver transistor and provides output current. In order to obtain high efficient output current through low on-resistance, please take enough Vgs (=VBIAS – VOUT(T)) of the driver transistor. Output current triggers operation of constant current limiter and fold-back circuit, heat generation triggers operation of thermal shutdown circuit, the driver transistor circuit is forced OFF when VBIAS or VIN voltage goes lower than UVLO voltage. Further, the IC's internal circuitry can be shutdown via the CE pin's signal.
XC6601A series
With the XC6601 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation circuit is built-in. The output capacitor (CL) should be connected as close to VOUT pin and VSS pin to obtain stable phase compensation. Values required for the phase compensation are as the table below. For a stable power input, please connect an bias capacitor (CBIAS ) of 1.0μF between the V BIAS pin and the VSS pin. Also, please connect an input capacitor (CIN) of 1.0μF between the VIN pin and the VSS pin. In order to ensure the stable phase compensation while avoiding run-out of values, please use the capacitor (CBIAS, CIN, CL ) which does not depend on bias or temperature too much. The table below shows recommended values of CBIAS, CIN, CL.
SETTING VOLTAGE 0.7V～1.8V
BIAS CAPACITOR CBIAS CBIAS=1.0μF
INPUT CAPACITOR CIN CIN=1.0μF
OUTPUT CAPACITOR CL CL=4.7μF
Recommended Values of CBIAS, CIN, CL
11/32
XC6601 Series
XC6601 series can quickly discharge the electric charge at the output capacitor (CL) when a low signal to the EN pin which enables a whole IC circuit put into OFF state, is inputted via the N-channel transistor located between the VOUT pin and the VSS pin. When the IC is disabled, electric charge at the output capacitor (CL) is quickly discharged so that it could avoids malfunction. At that time, CL discharge resistance is depended on a bias voltage. Discharge time of the output capacitor (CL) is set by the CL auto-discharge resistance (R) and the output capacitor (CL). By setting time constant of a CL auto-discharge resistance value [R] and an output capacitor value (CL) as τ(τ=C x R), the output voltage after discharge via the N channel transistor is calculated by the following formulas. V = VOUT x e –t/τ, or ｔ=τln（ VOUT(E) / V ） V : Output voltage after discharge, VOUT(E) : Output voltage, t: Discharge time, τ: CL auto-discharge resistance R×Output capacitor (CL) value C The XC6601 series’ fold-back circuit operates as an output current limiter and a short protection of the output pin. When the load current reaches the current limit level, the fixed current limiter circuit operates and output voltage drops. When the output pin is shorted to the VSS level, current flows about 80mA. When the junction temperature of the built-in driver transistor reaches the temperature limit level (150℃ TYP.), the thermal shutdown circuit operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown function is released and the IC’s operation is automatically restored because the junction temperature drops to the level of the thermal shutdown release temperature (125℃ TYP.). When the VBIAS pin voltage drops below 2.0V (TYP.) or VIN pin voltage drops below 0.4V (TYP.), the output driver transistor is forced OFF by UVLO function to prevent false output caused by unstable operation of the internal circuitry. When the VBIAS pin voltage rise at 2.2V (TYP.) or the VIN pin voltage rises at 0.4V (TYP.), the UVLO function is released. The driver transistor is
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XC6601
Series
13/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS
（1） Output Voltage vs. Output Current
X C6601B071MR
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.6V, VIN=1.0V
0.8 Output Voltage: VOUT(V) 0.6
Ta=-40℃
0.4 0.2 0.0 0 100
Ta=25℃ Ta=85℃
200
300
400
500
600
700
Output Current: IOUT(mA)
14/32
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
（2） Output Voltage vs. Bias Voltage
X C6601x071
0.9 0.8 0.7 0.6 0.5 1.7 1.9 2.1 2.3 2.5 Bias Voltage: VBIAS(V)
15/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(3) Output Voltage vs. Input Voltage
X C6601x071
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃
XC6601x071
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃
0.9
IOUT=0mA
0.9
IOUT=0mA IOUT=30mA
Output Voltage: VOUT(V)
Output Voltage: VOUT(V)
0.8 0.7 0.6 0.5 0.5 0.6 0.7
IOUT=100mA
0.8
IOUT=30mA IOUT=100mA
0.7 0.6 0.5
0.8
0.9
1
1.2 1.4 1.6 1.8
2
2.2 2.4 2.6 2.8
3
Bias Voltage: VBIAS(V)
Bias Voltage: VBIAS(V)
XC6601x121
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃
1.4 Output Voltage: VOUT(V)
IOUT=0mA
1.3
IOUT=30mA IOUT=100mA
I 1.5 IO O
CIN
1.2 1.1
.9 mA
=
3
0
m
A
BIAL)V6XC6x071
1.0 1 1.1 1.2 1.3 1.4 Bias Voltage: VBIAS(V)
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.6V, Ta=25℃
2.0
IOUT=0mA
Output Voltage: VOUT(V)
1.9
IOUT=30mA IOUT=100mA
1.8
1.7
1.6 1.6 1.7 1.8 1.9 2 Bias Voltage: VBIAS(V)
16/32
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
（4）Dropout Voltage vs. Output Current
XC6601B121MR (Vgs(*1)=2.4V)
CIN=C=C
X C6601B121MR (Vgs(*1)=1.8V)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.0V
400 Dropout Voltage: Vdif(mV)
Ta=-40℃
300 200 100 0 0
Ta=25℃ Ta=85℃
100 200 300 Output Current: IOUT(mA)
XC6601B121MR (Vgs(*1)=2.1V)
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.3V
400 Dropout Voltage: Vdif(mV)
Ta=-40℃
300 200 100 0 0
Ta=25℃ Ta=85℃
100 200 300 Output Current: IOUT(mA)
*1): Vgs is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT (T). A value of the dropout voltage is determined by the value of the Vgs.
=)
nL)
V=
XC6601
Series
400 Dropout Voltage: Vdif(mV)
Ta=-40℃
300 200 100 0 0
Ta=25℃ Ta=85℃
100 200 300 Output Current: IOUT(mA)
400
400
400
17/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(5) Supply Bias Current vs. Bias Voltage
XC6601x071
(6) Supply Input Current vs. Input Voltage
40 30 20 Supply Biaa 10 0 0 1 2 3 4 5 6 Bias Voltage: VBIAS(V)
18/32
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(7) Output Voltage vs. Ambient Temperature
X C6601x071
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.6V, VIN=1.0V
(8) Supply Bias Current vs. Ambient Temperature
0.73 Output Voltage: VOUT(V) 0.72 0.71 0.70 0.69 0.68 0.67 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃)
IOUT=1mA IOUT=30mA IOUT=100mA
XC6601x121
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.6V, VIN=1.5V
1.23 Output Voltage: VOUT(V) 1.22 1.21 1.20 1.19 1.18 1.17 -50 -25 0 25 50 75 100
IOUT=1mA IOUT=30mA IOUT=100mA
Ambient Temperature: Ta(℃)
XC6601x181
1.83 1.82 1.81 1.80 1.79 1.78 1.77 -50 -25 0 25 50 75
19/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(9) Supply Input Current vs. Ambient Temperature
X C6601x071
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.6V, VIN=1.0V
Supply Input Current: IIN(μA)
2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃)
XC6601x121
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.6V, VIN=1.5V
Supply Input Current: IIN(μA)
2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃)
XC6601x181
CIN=CBIAS=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.6V, VIN=2.1V
Supply Input Current: IIN(μA)
2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 Ambient Temperature: Ta(℃)
20/32
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
BIAS=0
(10) Bias Transient Response
IN= 1 . 0
=Ä
1.0 O U T (V)-1
5Bias Voltage V 5Bi as Vol ) tage VBIAS(V VIN=1.0V, IOUT=30mA, tr=tf=5.0sec, Ta=25=Ä 4
4
3 XC6601x1211.0 4 2
3
2
2
1
1
1
0
0
0
1.1Ti 1.1
me (
Time (40usec/div)Output Voltage VOUT(V)-1 40usec/di v)Out put V ol
tage VOU )-1
T(V
Time (40usec/div)Output Voltage V
1.0 O U T =30mA, tr=tf=5.0sec, T a=25
0.9 1.5
4
5Bias Voltage VBIAS(V)
0.8 1.3
0
1
2
3
0.7 1.2 3
2.1
2.2
Time (40usec/div)Output Voltage VOUT(V)-1
0.6 Voltage XC6601x0710.5 5Bias 3 1.6 1.4 VoltageOutput Voltage C 1.7 1.1 1.8 VBIAS(V)Bias 2.0 1.9 IN= Bias Voltage OutputVoltageOutput Voltage CIN=1.0F(ceramic), CBIAS=0F(ceramic), CL=4.7F(ceramic) Bias Voltage XC6601x1811.6 XC6601x0710.5 CIN=1.0F(ceramic), CBIAS=0F(ceramic), CL=4.7F(ceramic) XC6601x121 VIN=2.1V, IOUT=30mA, tr=tf=5.0sec, Ta=25 1 . 5 V , I
21/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(11) Input Transient Response
22/32
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(12) Load Transient Response
23/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(13) CE Rising Response Time
24/32
a=25 ), CL=4.7F(ceramic)
XC6601
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(14) VIN Rising Response Time
25/32
XC6601 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
(15) Bias Voltage Ripple Rejection Rate
X C6601x071
CBIAS=0μF, CIN=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.6VDC+0.2Vp-pAC, VIN=1.0V, IOUT=30mA, Ta=25℃
(16) Input Voltage Ripple Rejection Rate
80 70 VBIAS_PSRR(dB) 60 50 40 30 20 10 0 0.01 0.1 1 10 100 1000 10000
Frequency (kHz)
XC6601x121
CBIAS=0μF, CIN=1.0μF(ceramic), CL =4.7μF(ceramic) VBIAS=3.6VDC+0.2Vp-pAC, VIN=1.5V, IOUT=30mA, Ta=25℃
80 70 VBIAS_PSRR(dB) 60 50 40 30 20 10 0 0.01 0.1 1 10 100 1000 10000
Frequency (kHz)
26/32
XC6601
Series
●USP-6C
(UNIT : mm)
●SOT-25
●SOT-89-5
27/32
XC6601 Series
■PACKAGING INFORMATION (Continued)
● USP-6C Power Dissipation Power dissipation data for the USP-6C is shown in this page. The value of power dissipation varies with the mount board conditions. Please use this data as one of reference data taken in the described condition.
1.
Measurement Condition (Reference data) Condition: Ambient: Soldering: Board: Mount on a board Natural convection Lead (Pb) free Dimensions 40 x 40 mm (1600 mm in one side) Copper (Cu) traces occupy 50% of the board area In top and back faces Package heat-sink is tied to the copper traces Material: Thickness: Glass Epoxy (FR-4) 1.6 mm
2
て
Through-hole: 4 x 0.8 Diameter
2.
Power Dissipation vs. Operating temperature
Evaluation Board (Unit: mm) Board Mount (Tj max = 125℃)
Ambient Temperature（℃） 25 85
Power Dissipation Pd（mW） 1000 400
Thermal Resistance (℃/W) 100.00
Pd-Ta特性グラフ Pd vs. Ta
Power Dissipation Pd (mW)
1200 1000 800 600 400 200 0 25 45 65 85 Ambient Temperature Ta (℃) 周辺温度Ta（℃） 105 125
28/32
許容損失Pd（mW）
XC6601
Series
●
SOT-25 Power Dissipation
評価基板レイアウト（単位：mm）
Board Mount (Tj max = 125℃)
Ambient Temperature（℃） 25 85
Power Dissipation Pd（mW） 600 240
Thermal Resistance (℃/W) 166.67
29/32
XC6601
Series
■MARKING RULE
●SOT25, 89-5, USP6C
SOT25
5
① ② ③ ④
① Represents product series
MARK
4
⑤
PRODUCT SERIES XC6601******
9
② Represents type of regulators
MARK OUTPUT VOLTAGE RANGE XC6601A***** XC6601B***** A B
1
2
3
SOT89-5 5
③
2
⑤
4
③ Represents output voltage
MARK 0 1 2 3 4 5 6 7 8 9 A B C D E ④,⑤ OUTPUT VOLTAGE (V) 0.7 0.75 0.8 0.85 0.9 0.95 1.0 1.05 1.1 1.15 1.2 1.25 1.3 1.35 1.4 MARK F H K L M N P R S T U V X Y Z OUTPUT VOLTAGE (V) 1.45 1.5 1.55 1.6 1.65 1.7 1.75 1.8 -
①②
1
2
④
3
USP6C
① ④ ⑤ ② ③
Represents production lot number 01∼09、0A
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XC6601 Series
1. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. 3. Please ensure suitable shipping controls (including fail-safe designs and aging protection) are in force for equipment employing products listed in this datasheet. 4. The products in this datasheet are not developed, designed, or approved for use with such equipment whose failure of malfunction can be reasonably expected to directly endanger the life of, or cause significant injury to, the user. (e.g. Atomic energy; aerospace; transport; combustion and associated safety equipment thereof.) 5. Please use the products listed in this datasheet within the specified ranges. Should you wish to use the products under conditions exceeding the specifications, please consult us or our representatives. 6. We assume no responsibility for damage or loss due to abnormal use. 7. All rights reserved. No part of this datasheet may be copied or reproduced without the prior permission of TOREX SEMICONDUCTOR LTD.
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