XC6602 Series
ETR03045-007b
1A, 0.5V Low Input Voltage, High Speed LDO Regulator
■GENERAL DESCRIPTION
The XC6602 series is a low voltage input (0.5V) operation and provides high accuracy ±15mV/±20mV and can supply large
current efficiently due to its ultra low on-resistance even at low output voltages.
The series is ideally suited to the applications which require high current in low input/output voltages and consists of a Nch driver
transistor, a voltage reference, an error amplifier, a current limiter, a fold-back circuit, a thermal shutdown (TSD) circuit, an under
voltage lock out (UVLO) circuit, a soft-start circuit and a phase compensation circuit.
Output voltage is selectable in 0.1V increments within a range of 0.5V to 1.8V using laser trimming technology and ceramic
capacitors can be used for the output stabilization capacitor (CL). The inrush current (IRUSH) from VIN to VOUT for charging CL at
start-up can be reduced and makes the VIN stable. The soft-start time is optimized internally.
The CE function enables the output to be turned off and the series to be put in stand-by mode resulting in greatly reduced power
consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor (CL) to be
discharged via the internal switch. As a result the VOUT pin quickly returns to the VSS level.
The CE pull-down function keeps the IC to be in stand-by mode even if the CE pin is left open.
■FEATURES
■APPLICATIONS
Smart phones / Mobile phones
Digital still cameras / Camcorders
Note PC / Tablet PC
E-book Readers / Electronic dictionaries
Wireless LAN
●
●
●
●
●
Maximum Output Current
:
1A (1.3A Limit)
ON Resistance
:
0.15Ω@VBIAS=3.6V,VOUT=1.2V
Bias Voltage Range
:
2.5V ~ 6.0V
Input Voltage Range
:
0.5V ~ 3.0V
Output Voltage Range
:
0.5V ~ 1.8V (0.1V increments)
Output Voltage Accuracy
:
±0.015V@VOUT<1.2V
Ripple Rejection
:
Low Power Consumption
:
100μA (VBIAS), 6.5μA(VIN)@VOUT=1.2V
Stand-by Current
:
0.01μA (VBIAS), 0.01μA (VIN)
Under-voltage Lockout
:
1.8V (VBIAS), 0.4V (VIN)
Thermal Shutdown
:
150℃@detect, 125℃@release
Protection Circuit
:
Fold-back Current Limit, TSD, UVLO
Function
:
Built-in Soft-start
±0.020@VOUT≧1.2V
60dB@f=1kHz (VBIAS_PSRR)
75dB@f=1kHz(VIN_PSRR)
CE Pull-Down (Active High)
CL Auto Discharge
Operating Ambient Temperature
Output Capacitor
Packages
Environmentally Friendly
■ TYPICAL APPLICATION CIRCUIT
:
:
:
:
-40℃~ 85℃
Ceramic Capacitor Compatible (2.2μF)
USP-6C, SOT-26W, SOT-89-5,WLP-5-02
EU RoHS Compliant, Pb Free
■TYPICAL PERFORMANCE
CHARACTERISTICS
●Dropout Voltage vs. Output Current
3.3V
I/O
XC6602x121MR-G
1.2V
VBIAS
System LSI
XC6602
VOUT
VIN
Input
CBIAS
1.0μF
CIN
1.0μF
VCE=VBIAS, CBIAS=CIN=1.0μF, CL =2.2μF
Ta=25℃
core1
CE
VSS
1.0V
CL
2.2μF
core2
250
Dropout Voltage: Vdif(mV)
HIGH
EFFICIENCY
Step-Down
DC/DC
Converter
VBIAS=3.3V
200
VBIAS=3.6V
VBIAS=5.0V
150
100
50
0
0
200
400
600
800
1000
Output Current: I OUT(mA)
1/26
XC6602 Series
■BLOCK DIAGRAMS
・Type A
VBIAS
VIN
Soft Start
Voltage
Reference
+
Error
Amp
-
VOUT
ON/OFF
Control
CE
Under Voltage
Lock Out
CE/
each
circuit
CE
Thermal
Shutdown
Current
Limit
R1
CE/
RDCHG
R pull-down
R2
VSS
・Type B
VBIAS
VIN
Voltage
Reference
+
Error
Amp
-
VOUT
ON/OFF
Control
CE
Under Voltage
Lock Out
CE/
each
circuit
CE
Thermal
Shutdown
Current
Limit
R1
CE/
RDCHG
R pull-down
R2
VSS
* Diodes inside the circuits are ESD protection diodes and parasitic diodes.
■PRODUCT CLASSIFICATION
1)Ordering Information
XC6602①②③④⑤⑥-⑦(*1)
DESIGNATOR
With soft-start circuit built-in, can be selected from with or without functions
ITEM
SYMBOL
DESCRIPTION
A
Soft-start included
①
Type
B
Soft-start excluded
Output Voltage
05 ~ 18
②③
e.g. 1.2V → ②=1, ③=2
④
Output Voltage Accuracy
1
±0.015V (VOUT<1.2V), ±0.020V (VOUT≧1.2V)
ER-G
USP-6C (3,000pcs/Reel)
MR-G
SOT-26W (3,000pcs/Reel)
(*1)
⑤⑥-⑦
Packages (Order Unit)
PR-G
SOT-89-5 (1,000pcs/Reel)
0R-G
WLP-5-02 (3,000pcs/Reel)
(*1) The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant.
2) Selection Guide
TYPE
A
B
2/26
SOFTSTART
CURRENT
LIMITTER
THERMAL
SHUTDOWN
UVLO
CE PULL-DOWN
RESISTOR
CL AUTO-DISCHARGE
Yes
No
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
Yes
XC6602
Series
■PIN CONFIGURATION
VOUT 1
CE 6
1 VBIAS
NC 5
2 VSS
VOUT 4
3 VIN
4 VIN
5 VSS
CE 2
3 VBIAS
WLP-5-02
(BOTTOM VIEW)
USP-6C
(BOTTOM VIEW)
VBIAS
VSS
VIN
6
5
4
1
2
3
CE
NC
VOUT
SOT-26W
(TOP VIEW)
VOUT
VIN
5
2
4
1
2
3
CE
VSS
VBIAS
SOT-89-5
(TOP VIEW)
*The dissipation pad for the USP-6C package should be solder-plated in recommended mount pattern and metal masking so as to enhance
mounting strength and heat release. If the pad needs to be connected to other pins, it should be connected to the VSS (No. 2) pin.
■PIN ASSIGNMENT
PIN NUMBER
PIN NAME
FUNCTIONS
3
VBIAS
Power Supply Input
5
VSS
Ground
4
VIN
Driver Transistor Input
1
VOUT
Output
-
-
NC
No Connection
1
2
CE
ON/OFF Control
USP-6C
SOT-26W
SOT-89-5
WLP-5-02
1
6
3
2
5
2
3
4
4
4
3
5
5
2
6
1
■FUNCTION CHART
XC6602 Series, Type A/B
PIN NAME
SIGNAL
L
H
OPEN
CE
STATUS
Stand-by
Active
Stand-by
■ABSOLUTE MAXIMUM RATINGS
PARAMETER
Bias Voltage
Input Voltage
SYMBOL
VBIAS
VIN
Output Voltage
VOUT
CE Input Voltage
VCE
USP-6C
Power Dissipation
(Ta=25℃)
SOT-26W
Pd
SOT-89-5
WLP-5-02
Operating Ambient Temperature
Storage Temperature
(*1)
Topr
Tstg
RATINGS
VSS - 0.3 ~ VSS + 6.5
VSS - 0.3 ~ VSS + 6.5
VSS - 0.3 ~ VBIAS + 0.3 ≦ VSS + 6.5
VSS - 0.3 ~ VIN + 0.3 ≦ VSS + 6.5
VSS - 0.3 ~ VSS + 6.5
120 (IC only)
1000 (40mm x 40mm Standard board)(*1)
1250 (JESD51-7 board )(*1)
250 (IC only)
600 (40mm x 40mm Standard board)(*1)
830 (JESD51-7 board )(*1)
500 (IC only)
1300 (40mm x 40mm Standard board)(*1)
1750 (JESD51-7 board )(*1)
750 (40mm x 40mm Standard board)(*1)
-40 ~ 85
-55 ~ 125
UNITS
V
V
V
V
V
mW
℃
℃
The power dissipation figure shown is PCB mounted and is for reference only.
Please refer to PACKAGING INFORMATION for the mounting condition.
3/26
XC6602 Series
■ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
Bias Voltage
Input Voltage
VBIAS
VIN
Output Voltage
VOUT(E)(*2)
Maximum Output Current(*4)
IOUTMAX
Load Regulation
(WLP-5-02)
Load Regulation
(USP-6C,SOT-26W,SOT-89-5)
Dropout Voltage
Supply Current 1(*9)
CONDITIONS
VOUT(T)<1.2V
VOUT(T)≧1.2V
VOUT(T)≦1.2V, VBIAS=VCE=2.5V
VOUT(T)>1.2V,VBIAS=VCE=VOUT(T)+1.3V
IOUT=100mA
Ta=25℃
MIN
TYP
MAX
UNITS
CIRCUIT
2.5
0.5
-0.015
-0.020
-
6.0
3.0
+0.015
+0.020
V
V
①
①
V
①
VOUT(T)(*3)
1.0
-
-
A
①
ΔVOUT
1mA≦IOUT≦1A
-
13
26
mV
①
ΔVOUT
1mA≦IOUT≦1A
-
37
68
mV
①
Vdif (*5)
IBIAS
IOUT=1A
IOUT=0A
IOUT=0A
μA
②
Stand-by Current 1
Stand-by Current 2
IBIAS_STB
IIN_STB
143
8.7
14.2
0.10
0.15
①
②
IIN
100
0.01
0.01
mV
μA
Supply Current 2
76
0.1
3.9
-
μA
μA
②
②
Bias Line Regulation
ΔVOUT/
(ΔVBIAS・VOUT)
-
0.01
0.10
%/V
①
-
0.01
0.10
%/V
①
VSS
2.5
VSS
0.5
-
1.28
6.0
0.23
3.0
V
V
V
V
①
①
①
①
-
±30
-
ppm/℃
①
-
60
-
dB
③
-
75
-
dB
③
1.0
-
1.3
90
-
A
mA
①
①
VOUT(T)<1.2V
VOUT(T)≧1.2V
VBIAS=6.0V,VIN=3.0V,VCE=VSS
VBIAS=6.0V,VIN=3.0V,VCE=VSS
VOUT(T)≦1.2V,VCE=VBIAS
2.5V≦VBIAS≦6.0V
VOUT(T)>1.2V,VCE=VBIAS
VOUT(T)+1.3V≦VBIAS≦6.0V
E-1(*8)
Bias UVLO Voltage
Bias UVLO Release Voltage
Input UVLO Voltage
Input UVLO Release Voltage
Output Voltage Temperature
Characteristics
ΔVOUT/
(ΔVIN・VOUT)
VBIAS_UVLOD
VBIAS_UVLOR
VIN_UVLOD
VIN_UVLOR
ΔVOUT/
(ΔTopr・VOUT)
Bias Ripple Rejection Ratio
VBIAS_PSRR
Input Ripple Rejection Ratio
VIN_PSRR
Limit Current(*4)
Short Current
Thermal Shutdown
Detect Temperature
Thermal Shutdown
Release Temperature
Thermal Shutdown Hysteresis Width
CLAuto-Discharge Resistance
CE ”H” Level Voltage
CE ”L” Level Voltage
CE ”H” Level Current
CE ”L” Level Current
Soft-Start Time (Type A) (*10)
Output Rise Time (Type B) (*10)
ILIM
ISHORT
IOUT=100mA
-40℃≦Topr≦85℃
VBIAS=VCE=3.6VDC+0.2Vp-pAC
IOUT=100mA,f=1kHz,CBIAS=OPEN
VIN=VOUT(T)+0.3VDC+0.2Vp-pAC
IOUT=100mA,f=1kHz,CIN=OPEN
VOUT=VOUT(E)×0.95
VOUT=VSS
TTSD
Junction Temperature
-
150
-
℃
①
TTSR
Junction Temperature
-
125
-
℃
①
TTSD - TTSR
RDCHG
VCEH
VCEL
ICEH
ICEL
tSS
tON
Junction Temperature
VCE=VSS,VOUT=VOUT(T)
Inrush Current (Type A)
IRUSH
130
0.65
VSS
3.2
-0.1
225
-
25
190
6.0
430
-
255
6.00
0.41
10.6
0.1
600
110
70
85
155
215
℃
Ω
V
V
μA
μA
μs
μs
mA
mA
mA
mA
①
①
④
④
④
④
⑤
⑤
⑤
⑤
⑤
⑤
Input Line Regulation
VOUT(T)+0.1V≦VIN≦3.0V
VBIAS=VCE=6.0V
VBIAS=6.0V,VCE=VSS
VCE=0V→3.6V,tr=5μs
VCE=0V→3.6V,tr=5μs
VOUT(T)≦1.2V
CL=2.2μF
VOUT(T)>1.2V
VOUT(T)≦1.2V
CL=10μF
VOUT(T)>1.2V
* 1: Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS=CIN=1.0μF, CL=2.2μF
* 2: VOUT(E) = Effective output voltage
* 3: VOUT(T) = Nominal output voltage
* 4: Mount conditions affect heat dissipation. Maximum output current is not guaranteed when TSD starts to operate earlier.
* 5: Vdif = {VIN1(*6)-VOUT1(*7)}.
* 6: VIN1 is an input voltage when VOUT1 appears at the output during decreasing input voltage gradually.
* 7: VOUT1 is a voltage equal to 98% of the output voltage where VBIAS=VCE=3.6 and VIN=VOUT(T)+0.3V at IOUT=1A is input to the VIN pin.
* 8: Please refer to the table E-1 named DROPOUT VOLTAGE CHART
* 9: Supply current 1 may be fluctuated because that some bias current flows into the output.
* 10: A time between the CE input goes over the CE H threshold and the output reaches VOUT(E)x0.9V.
4/26
XC6602
Series
■ELECTRICAL CHARACTERISTICS (Continued)
●OUTPUT VOLTAGE CHART (WLP-5-02)
E-1
NOMINAL
DROPOUT VOLTAGE (mV)
OUTPUT
VBIAS=3.0V
VOLTAGE
VGS
VBIAS=3.3V
Vdif(mV)
VGS
VOUT(T)
(V)
TYP.
MAX.
(V)
0.5
2.5
79
134
2.8
0.6
2.4
0.7
2.3
82
139
0.8
2.2
85
144
2.5
0.9
2.1
88
149
2.4
1.0
2.0
91
154
2.3
1.1
1.9
94
159
1.2
1.8
100
1.3
1.7
109
1.4
1.6
1.5
2.7
VBIAS=3.6V
Vdif(mV)
TYP.
MAX.
76
129
2.6
VGS
(V)
VBIAS=4.2V
Vdif(mV)
TYP.
MAX.
VGS
(V)
VBIAS=5.0V
Vdif(mV)
TYP.
MAX.
VGS
(V)
3.1
3.7
4.5
3.0
3.6
4.4
2.9
79
134
2.8
82
139
2.2
85
144
2.5
169
2.1
88
149
2.4
184
1.9
91
154
2.3
118
199
1.9
94
159
1.5
130
219
1.8
100
1.6
1.4
144
244
1.7
1.7
1.3
171
289
1.8
1.2
201
339
76
129
3.5
73
124
4.2
2.7
3.3
4.1
2.6
3.2
4.0
3.1
3.9
79
134
82
139
2.2
85
144
2.8
3.6
169
2.1
88
149
2.7
3.5
109
184
2.0
91
154
2.6
3.4
1.6
118
199
1.9
94
159
2.5
79
134
3.3
1.5
130
219
1.8
100
169
2.4
82
139
3.2
2.9
TYP.
MAX.
72
122
73
124
76
129
4.3
3.4
3.0
Vdif(mV)
3.8
76
129
3.7
* Dropout voltage is defined as the VGS(=VBIAS–VOUT(E)) of the driver transistor.
●OUTPUT VOLTAGE CHART (USP-6C,SOT-26W,SOT-89-5)
E-1
NOMINAL
DROPOUT VOLTAGE (mV)
OUTPUT
VBIAS=3.0V
VOLTAGE
VGS
VBIAS=3.3V
Vdif (mV)
VGS
VOUT(T)
(V)
TYP.
MAX.
(V)
0.5
2.5
152
218
2.8
0.6
2.4
0.7
2.3
155
223
0.8
2.2
158
228
2.5
0.9
2.1
162
233
2.4
1.0
2.0
165
238
2.3
1.1
1.9
167
243
1.2
1.8
169
1.3
1.7
1.4
2.7
VBIAS=3.6V
Vdif (mV)
TYP.
MAX.
TYP.
MAX.
VGS
(V)
VBIAS=5.0V
Vdif (mV)
TYP.
MAX.
VGS
(V)
3.1
3.7
4.5
3.0
3.6
4.4
146
213
152
218
155
223
2.2
158
228
2.5
253
2.1
162
233
2.4
179
268
2.0
165
238
2.3
1.6
189
283
1.9
167
243
1.5
1.5
202
303
1.8
169
1.6
1.4
213
328
1.7
1.7
1.3
225
373
1.8
1.2
255
423
2.6
Vdif (mV)
VGS
(V)
VBIAS=4.2V
2.9
2.8
146
213
3.5
140
208
4.2
2.7
3.3
4.1
2.6
3.2
4.0
3.1
3.9
3.0
3.8
152
218
155
223
2.2
158
228
2.8
3.6
253
2.1
162
233
2.7
3.5
179
268
2.0
165
238
2.6
3.4
1.6
189
283
1.9
167
243
2.5
152
218
3.3
1.5
202
303
1.8
169
253
2.4
155
223
3.2
146
213
TYP.
MAX.
137
206
140
208
146
213
4.3
3.4
2.9
Vdif (mV)
3.7
* Dropout voltage is defined as the VGS(=VBIAS–VOUT(E)) of the driver transistor.
5/26
XC6602 Series
■TEST CIRCUITS
●Circuit ①
CBIAS
1.0μF
VBIAS
VIN
V
A
VOUT
CL
2.2μF
CIN
1.0μF
CE
V
SW2
V
SW1
RL
VSS
●Circuit ②
A
CBIAS
1.0μF
VBIAS
A
V
VIN
VOUT
CL
2.2μF
CIN
1.0μF
V
CE
SW1
V
VSS
●Circuit ③
SW3
CBIAS
1.0μF
VBIAS
VIN
V
SW4
A
VOUT
CL
2.2μF
CIN
1.0μF
CE
V
SW5
SW6
V
RL
VSS
●Circuit ④
CBIAS
1.0μF
V
CIN
1.0μF
A
V
V
6/26
VBIAS
VIN
A
VOUT
CL
2.2μF
CE
V
VSS
RL
XC6602
Series
■TEST CIRCUITS (Continued)
●Circuit ⑤ (Timing Chart)
Waveform
measure
IRUSH
V
Waveform
measure
CBIAS
1.0μF
A
VIN
CIN
1.0μF
Waveform
measure
A
VOUT
CL
V
CE
V
V
Voltage[V]
Current[mA]
VBIAS
RL
VSS
CE 0V→3.6V
Voltage[V]
CE 0V→3.6V
CE ”H” Level Voltage
VOUT
VOUT(E)×0.9V
CE ”H” Level Voltage
IIN
VOUT
VOUT(E)×0.9V
IRUSH
Time[μs]
tSS
XC6602 Series, Type A
Time[μs]
tON
XC6602 Series, Type B
7/26
XC6602 Series
■OPERATIONAL EXPLANATION
The voltage divided by resistors R1 and R2 is compared with the internal reference voltage by the error amplifier. The VOUT
pin is then driven by the subsequent output signal. The output voltage at the VOUT pin is controlled and stabilized by a system
of negative feedback.
VBIAS pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. Also, the VBIAS pin supplies
some current as output current. VIN pin is connected to a driver transistor and provides output current.
In order to obtain high efficient output current through low on-resistance, please take enough VGS (=VBIAS – VOUT(E)) of the
driver transistor.
VBIAS
VIN
Soft Start
Voltage
Reference
+
Error
Amp
-
VOUT
CE
ON/OFF
Control
R pull-down
CE/
each
circuit
CE
Under Voltage
Lock Out
Thermal
Shutdown
Current
Limit
R1
CE/
RDCHG
R2
VSS
Figure1: XC6602 Series, Type A
With the XC6602 (Type A), the inrush current (IRUSH) from VIN to VOUT for charging CL at start-up can be reduced and makes the
VIN stable.
As for the XC6602, the soft-start time in the type A is optimized internally. On the other hand, the type B of the XC6602 does
not have the soft-start time function.
The XC6602 series includes a combination of a fixed current limiter circuit and a foldback short-circuit protection. When the
output current reaches the current limit, the output voltage drops and this operation makes the output current foldback to be
decreased.
When the junction temperature of the built-in driver transistor reaches the temperature limit, the thermal shutdown circuit
operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown function is
released and the IC’s operation is automatically restored because the junction temperature drops to the level of the thermal
shutdown release temperature.
When the VBIAS pin and VIN pin voltage drops, the output driver transistor is set to OFF by UVLO function to prevent false
output caused by unstable operation of the internal circuitry. When the VBIAS pin voltage and the VIN pin voltage rises at
release voltage, the UVLO function is released. The driver transistor is turned ON and start to operate voltage regulation.
8/26
XC6602
Series
■OPERATIONAL EXPLANATION (Continued)
The XC6602 internal circuitry can be shutdown via the signal to the CE pin. In shutdown mode with CE low level voltage, the
VOUT pin will be pulled down to the VSS level via CL discharge resistance (RDCHG) placed in parallel to R1 and R2.
The CE pin has pull-down circuitry so that CE input current flows during IC operation. If the CE pin voltage is taken from VBIAS
pin or VSS pin then logic is fixed and the IC will operate normally. However, supply current may increase as a result of through
current in the IC's internal circuitry when medium voltage is input.
XC6602 series can quickly discharge the electric charge at the output capacitor (CL) via the internal transistor located between
the VOUT pin and the VSS pin when a low signal to the CE pin which enables a whole IC circuit put into OFF state. When the IC
is disabled, electric charge at the output capacitor (CL) is quickly discharged so that it could avoids malfunction. Discharge time
of the output capacitor (CL) is set by the CL auto-discharge resistance (RDCHG) and the output capacitor (CL). By setting time
constant of a CL auto-discharge resistance value (RDCHG) and an output capacitor value (CL) as τ(τ= CL x RDCHG), the output
voltage after discharge via the internal transistor is calculated by the following formula. Please also note RDCHG is depended on
VBIAS. When VBIAS is larger, RDCHG is smaller.
V = VOUT(E)×e-t/τ or t=τln(VOUT(E) / V)
(V: Output voltage after discharge, VOUT(E) : Initial Output voltage, t: Discharge time,
τ: CL auto-discharge resistance RDCHG×CL Output capacitance
With the XC6602 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation
circuit is built-in. The output capacitor (CL) should be connected as close to VOUT pin and VSS pin to obtain stable phase
compensation. Values required for the phase compensation are as the table below.
For a stable power input, please connect an bias capacitor (CBIAS ) between the VBIAS pin and the VSS pin. Also, please connect
an input capacitor (CIN) between the VIN pin and the VSS pin. In order to ensure the stable phase compensation while avoiding
run-out of values, please use the capacitor (CBIAS, CIN, CL ) which does not depend on bias or temperature too much. The table
below shows recommended values of CBIAS, CIN, CL.
CHART 1:Recommended Values of CBIAS, CIN, CL (MIN.)
OUTPUT VOLTAGE RANGE
VOUT(T)
BIAS CAPACITOR
CBIAS
INPUT CAPACITOR
CIN
OUTPUT CAPACITOR
CL
0.5V ~ 1.8V
1.0μF
1.0μF
2.2μF
9/26
XC6602 Series
■NOTES ON USE
1.
For temporary, transitional voltage drop or voltage rising phenomenon, the IC is liable to malfunction should the ratings
be exceeded.
2.
Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output
current. Please keep the resistance low for the VBIAS, VIN and VSS wiring in particular.
3.
Please wire the CBIAS, CIN and CL as close to the IC as possible.
4.
Capacitances of these capacitors (CBIAS, CIN, CL) are decreased by the influences of bias voltage and ambient temperature.
Care shall be taken for capacitor selection to ensure stability of phase compensation from the point of ESR influence.
5.
When it is used in a quite small input / output dropout voltage, output may go into unstable operation. Please test it
thoroughly before using it in production.
6.
Torex places an importance on improving our products and their reliability.
We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in
their systems
7.
Note on mounting (WLP-5-02)
(1) Mount pad design should be optimized for user's conditions.
(2) Sn-AG-Cu is used for the package terminals. If eutectic solder is used, mounting reliability is decreased. Please do
not use eutectic solder paste.
(3) When underfill agent is used to increase interfacial bonding strength, please take enough evaluation for selection.
Some underfill materials and applied conditions may decrease bonding reliability.
(4) The IC has exposed surface of silicon material in the top marking face and sides so that it is weak against
mechanical damages. Please take care of handling to avoid cracks and breaks.
(5) The IC has exposed surface of silicon material in the top marking face and sides. Please use the IC with keeping the
circuit open (avoiding short-circuit from the out).
(6) Semi-transparent resin is coated on the circuit face of the package. Please be noted that the usage under strong
lights may affects device performance.
10/26
XC6602
Series
■ TYPICAL PERFORMANCE CHARACTERISTICS
* Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃
(1) Output Voltage vs. Output Current
(2) Output Voltage vs. Bias Voltage
XC6602x051xR-G
0.6
0.6
0.5
0.5
Output Voltage: V OUT (V)
Output Voltage: V OUT (V)
XC6602x051MR-G
0.4
VIN=0.8V
0.3
VIN=1.0V
0.2
0.1
0.4
IOUT=0mA
0.3
IOUT=1mA
IOUT=100mA
0.2
0.1
0.0
0.0
0
0.5
1
0
1.5
1
Output Current: IOUT (A)
1.4
1.4
1.2
1.2
Output Voltage: V OUT (V)
Output Voltage: V OUT (V)
4
5
6
XC6602x121xR-G
1.0
VIN=1.5V
VIN=1.7V
0.6
0.4
0.2
0.0
1.0
IOUT=0mA
0.8
IOUT=1mA
IOUT=100mA
0.6
0.4
0.2
0.0
0
0.5
1
Output Current: IOUT (A)
1.5
0
1
XC6602x181MR-G
Output Voltage: V OUT (V)
1.5
VIN=2.1V
VIN=2.3V
1.0
0.5
0.0
0
0.5
1
Output Current: IOUT (A)
2
3
4
Bias Voltage: V BIAS (V)
5
6
XC6602x181xR-G
2.0
Output Voltage: V OUT (V)
3
Bias Voltage: V BIAS (V)
XC6602x121MR-G
0.8
2
1.5
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
IOUT=0mA
IOUT=1mA
IOUT=100mA
0
1
2
3
4
Bias Voltage: V BIAS (V)
5
6
* Mount conditions affect heat dissipation. Thermal shutdown may start to operate before reaching the current limit.
11/26
XC6602 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃
XC6602x121MR-G
XC6602x051xR-G
(3) Output Voltage zvs. Input Voltage
(4) Dropout Voltage vs. Output Current
250
Dropout Voltage: Vdif(mV)
Output Voltage: V OUT (V)
0.6
0.5
0.4
IOUT=0mA
IOUT=1mA
0.3
IOUT=100mA
0.2
0.1
VBIAS =3.0V
200
VBIAS =3.3V
VBIAS =3.6V
VBIAS =4.2V
150
VBIAS =5.0V
100
50
0
0.0
0
1
2
Input Voltage: V IN(V)
0
3
200
400
600
800
1000
Output Current: IOUT (mA)
XC6602x121xR-G
XC6602xxx1MR-G
350
1.2
300
Ta=-40℃
250
Ta=25℃
Dropout Voltage: Vdif(mV)
Output Voltage: V OUT (V)
IOUT =1A
1.4
1.0
0.8
0.6
IOUT=0mA
0.4
IOUT=100mA
IOUT=1mA
0.2
Ta=85℃
200
150
100
50
0
0.0
0
1
2
1
3
2
3
4
5
6
V GS(*1)(V)
Input Voltage: V IN(V)
XC6602x181xR-G
(*1)
VGS is a Gate –Source voltage of the driver transistor that is defined as
the value of VBIAS - VOUT(E).
A value of the dropout voltage is determined by the value of the VGS.
2.0
Output Voltage: V OUT (V)
1.8
1.6
1.4
1.2
1.0
0.8
IOUT=0mA
0.6
IOUT=1mA
0.4
IOUT=100mA
0.2
0.0
0
1
2
Input Voltage: V IN(V)
12/26
3
XC6602
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃
(5) Supply Bias Current vs. Bias Voltage
(6) Supply Input Current vs. Input Voltage
(6)入力電流-入力電圧特性例
(5)バイアス電流-バイアス電圧特性例
XC6602x051xR-G
XC6602x051xR-G
CIN=CBIAS =CL=OPEN
CIN=CBIAS =CL=OPEN
IOUT =0mA
Supply Input Current: IIN(μA)
Supply Bias Current: IBIAS (μA)
160
140
120
100
80
Ta=-40℃
Ta=25℃
Ta=85℃
60
40
20
0
0
1
2
3
4
Bias Voltage: V BIAS (V)
6
0
CIN=CBIAS =CL=OPEN
V CE=V BIAS , IOUT =0mA
160
Supply Input Current: IIN(μA)
140
120
100
80
60
40
Ta=-40℃
Ta=25℃
Ta=85℃
20
0
0
1
2
Ta=-40℃
Ta=25℃
Ta=85℃
0.5
1
1.5
2
Input Voltage: V IN(V)
3
4
5
20
18
16
14
12
10
8
6
4
2
0
6
Ta=-40℃
Ta=25℃
Ta=85℃
0
0.5
1
1.5
2
Input Voltage: V IN(V)
Supply Input Current: IIN(μA)
Supply Bias Current: IBIAS (μA)
140
120
100
80
60
40
Ta=-40℃
Ta=25℃
Ta=85℃
20
0
1
2
3
2.5
3
XC6602x181xR-G
C =CBIAS =CL=OPEN
V CE=V BIAS , IOUT =0mA,
CIN=CBIAS =CL=OPEN
IOUT =0mA
Bias Voltage: V BIAS (V)IN
0
3
CIN=CBIAS =CL=OPEN
IOUT =0mA
XC6602x181xR-G
160
2.5
XC6602x121xR-G
XC6602x121xR-G
Supply Bias Current: IBIAS (μA)
5
20
18
16
14
12
10
8
6
4
2
0
4
Bias Voltage: V BIAS(V)
5
6
20
18
16
14
12
10
8
6
4
2
0
Ta=-40℃
Ta=25℃
Ta=85℃
0
0.5
1
1.5
2
2.5
3
Input Voltage: V IN(V)
13/26
XC6602 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃
(7) Output Voltage vs. Ambient Temperature
(8) Supply Bias Current vs. Ambient Temperature
XC6602x051xR-G
XC6602x051xR-G
CIN=CBIAS =CL=OPEN
IOUT =0mA
160
Supply Bias Current: IBIAs (μA)
Output Voltage: V OUT (V)
0.52
140
IOUT=1mA
0.51
IOUT=100mA
120
0.5
100
0.49
80
60
40
0.48
-50
0
50
Ambient Temperature: Ta(℃)
-50
100
Supply Bias Current: IBIAs (μA)
Output Voltage: V OUT (V)
CIN=CBIAS =CL=OPEN
IOUT =0mA
160
1.22
IOUT=1mA
1.21
100
XC6602x121xR-G
XC6602x121xR-G
IOUT=100mA
1.2
1.19
140
120
100
80
60
40
1.18
-50
0
50
Ambient Temperature: Ta(℃)
-50
100
Supply Bias Current: IBIAs (μA)
IOUT=1mA
1.81
IOUT=100mA
1.8
1.79
1.78
-50
0
50
Ambient Temperature: Ta(℃)
100
CIN=CBIAS = CL=OPEN
IOUT =0mA
160
1.82
14/26
0
50
Ambient Temperature: Ta(℃)
XC6602x181xR-G
XC6602x181xR-G
Output Voltage: V OUT (V)
0
50
Ambient Temperature: Ta(℃)
100
140
120
100
80
60
40
-50
0
50
Ambient Temperature: Ta(℃)
100
XC6602
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃
(9) Supply Input Current vs. Ambient Temperature
(9)入力電流-周囲温度特性例
XC6602x051xR-G
Supply Input Current: IIN(μA)
CIN=CBIAS=CL=OPEN
IOUT=0mA
3
2
1
0
-50
0
50
100
Ambient Temperature: Ta(℃)
XC6602x121xR-G
CIN=CBIAS=CL=OPEN
IOUT=0mA
Supply Input Current: IIN(μA)
12
10
8
6
4
2
0
-50
0
50
100
Ambient Temperature: Ta(℃)
XC6602x181xR-G
CIN=CBIAS=CL=OPEN
IOUT=0mA
Supply Input Current: IIN(μA)
16
14
12
10
8
6
4
-50
0
50
Ambient Temperature: Ta(℃)
100
15/26
XC6602 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃
(10) Bias Transient Response
(11) Input Transient Response
(11)入力過渡応答特性例
(10)バイアス過渡応答特性例
XC6602x051xR-G
XC6602x051xR-G
CIN=OPEN
V IN=0.8V→1.8V(tr=tf=5μs), IOUT =100mA
0.58
0.56
4
0.54
3
0.52
2
0.5
1
Output Voltage: V OUT (V)
5
Bias Voltage
Bias Voltage: VBIAS (V)
Output Voltage
0.48
Input Voltage
1
0.52
0
0.5
Output Voltage
0.48
0
XC6602x121xR-G
XC6602x121xR-G
1.28
5
CIN=OPEN
V IN=1.5V→2.5V(tr=tf=5μs), IOUT =100mA
3.5
4
1.24
3
1.22
2
1.2
1
Output Voltage
Bias Voltage: V BIAS (V)
1.26
Output Voltage: V OUT (V)
Input Voltage
Bias Voltage
1.18
-1
-2
Time (200μs/div)
1.28
2
0.54
Time (200μs/div)
CBIAS =OPEN
V BIAS =3.0V→4.0V(tr=tf=5μs) IOUT =100mA
Output Voltage: V OUT (V)
0.56
3
1.26
2.5
1.24
1.5
1.22
0.5
Output Voltage
1.2
-0.5
1.18
0
Input Voltage: V IN(V)
Output Voltage: V OUT (V)
0.58
Input Voltage: V IN(V)
CBIAS =OPEN
V BIAS =3.0V→4.0V(tr=tf=5μs), IOUT =100mA
-1.5
Time (200μs/div)
Time (200μs/div)
XC6602x181xR-G
XC6602x181xR-G
1.88
CBIAS =OPEN
V BIAS =3.6V→4.6V(tr=tf=5μs) IOUT =100mA
CIN=OPEN
V IN=2.1V→3.1V(tr=tf=5μs), IOUT =100mA
1.88
5
4
Bias Voltage
3
1.82
2
1.8
1
Output Voltage
1.78
0
Time (200μs/div)
16/26
Output Voltage: V OUT (V)
1.84
1.86
4
Bias Voltage: V BIAS (V)
Output Voltage: V OUT (V)
1.86
3
1.84
2
1.82
1
Output Voltage
1.8
0
1.78
Input Voltage: V IN(V)
Input Voltage
-1
Time (200μs/div)
XC6602
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃
(12) Load Transient Response
XC6602x051xR-G
IOUT =1mA⇔100mA(tr=tf=5μs)
0.2
Output Current
0.62
0.1
0.58
0
0.54
-0.1
0.5
Outpur Current: IOUT (A)
Output Voltage: VOUT (V)
0.66
-0.2
Output Voltage
0.46
-0.3
Time (200μs/div)
XC6602x121xR-G
1.36
IOUT =1mA⇔100mA(tr=tf=5μs)
0.2
1.32
0.1
1.28
0
1.24
-0.1
1.2
-0.2
Output Voltage
1.16
Outpur Current: IOUT (A)
Output Voltage: V OUT (V)
Output Current
-0.3
Time (200μs/div)
XC6602x181xR-G
1.96
IOUT =1mA⇔100mA(tr=tf=5μs)
0.2
0.1
1.88
0
1.84
-0.1
1.8
-0.2
Output Voltage
1.76
Outpur Current: IOUT (A)
Output Voltage: V OUT (V)
Output Current
1.92
-0.3
Time (200μs/div)
17/26
XC6602 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃
(13) CE Input Voltage Response
XC6602A051xR-G
XC6602A051xR-G
-2
2
100
Input Current
50
-4
0
-6
-50
0
-2
0
-2
200
4
150
2
100
Input Current
50
-4
0
-6
-50
-2
CE Input Voltage
18/26
Input Current
-4
0
-50
150
Input Current
50
0
-50
VCE=0V→3.6V(tr=5μs)
I OUT =100mA
4
200
100
Time (200μs/div)
50
XC6602A181xR-G
CE Input Voltage: V CE(V)
CE Input Voltage: VCE (V)
-6
150
100
-6
Input Current: IIN (mA)
VCE=0V→3.6V(tr=5μs)
IOUT=100mA
-4
CE Input Voltage
200
Time (50μs/div)
0
-2
VCE=0V→3.6V(tr=5μs)
IOUT=100mA
Rush Current
XC6602A181xR-G
2
0
-50
0
Time (200μs/div)
4
Input Current
XC6602A121xR-G
CE Input Voltage: V CE(V)
CE Input Voltage
50
Time (50μs/div)
Input Current: IIN (mA)
CE Input Voltage: V CE(V)
2
Rush Current
-6
XC6602A121xR-G
4
150
100
-4
Time (200μs/div)
VCE=0V→3.6V(tr=5μs)
IOUT=100mA
CE Input Voltage
Input Current: IIN (mA)
0
150
200
Input Current: IIN (mA)
CE Input Voltage
4
2
0
CE Input Voltage
Rush Current
-2
200
150
100
50
Input Current
-4
-6
0
Time (50μs/div)
-50
Input Current: IIN (mA)
2
200
CE Input Voltage: V CE (V)
CE Input Voltage: VCE (V)
4
VCE=0V→3.6V(tr=5μs)
IOUT=100mA
Input Current: IIN (mA)
VCE=0V→3.6V(tr=5μs)
IOUT=100mA
XC6602
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃
(13)CE Input Voltage Response (Continued)
(13)突入電流特性例
(14)CE
XC6602A051xR-G
4
300
2
200
-2
100
-100
0
-2
0
-6
-4
400
4
300
2
200
-2
100
Input Current
-6
0
-4
Input Current
0
-100
CL=10μF
VCE=0V→3.6V(tr=5μs), IOUT=100mA
4
100
0
-100
CE Input Voltage: V CE (V)
-2
Input Current: IIN (mA)
300
200
Time (200μs/div)
100
XC6602A181xR-G
0
-6
300
Time (50μs/div)
400
Input Current
400
200
-2
CL=10μF
VCE=0V→3.6V(tr=5μs), IOUT=100mA
-4
CE Input Voltage
-6
-100
CE Input Voltage
CL =10μF
VCE=0V→3.6V(tr=5μs), IOUT=100mA
Rush Current
XC6602A181xR-G
2
-100
0
Time (200μs/div)
4
0
XC6602A121xR-G
CE Input Voltage: V CE (V)
CE Input Voltage
100
Time (50μs/div)
Input Current: IIN (mA)
CE Input Voltage: V CE(V)
2
Rush Current
Input Current
XC6602A121xR-G
4
200
-4
Time (200μs/div)
CL=10μF
VCE=0V→3.6V(tr=5μs), IOUT=100mA
300
Input Current: IIN (mA)
-6
0
CE Input Voltage
2
400
CE Input Voltage
0
300
200
Rush Current
-2
-4
100
Input Current
-6
0
Input Current: IIN (mA)
Input Current
400
Input Current: IIN (mA)
400
0
-4
CL =10μF
VCE=0V→3.6V(tr=5μs), IOUT=100mA
CE Input Voltage: V CE (V)
CE Input Voltage
XC6602A051xR-G
Input Current: IIN (mA)
CE Input Voltage: V CE (V)
2
CE Input Voltage: V CE (V)
IN
4
CL =10μF
VCE=0V→3.6V(tr=5μs), IOUT=100mA
-100
Time (50μs/div)
19/26
XC6602 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃
(14) CE Rising Response Time
(15)
CE Input Voltage
4
1.2
2
0
0.8
-2
0.4
Output Voltage
-6
0
-0.4
0
-4
-6
1.5
2
1
Output Voltage
0.5
0
CE Input Voltage: V CE (V)
CE Input Voltage: V CE (V)
Input Current: IIN (mA)
CE Input Voltage
2
4
2
Output Voltage
-4
-6
20/26
3
1
0
Time (200μs/div)
-1
CE Input Voltage: V CE (V)
-2
1
-2
0.5
-4
0
-0.5
VCE=0V→3.6V(tr=5μs)
IOUT=100mA
4
Output Voltage: VOUT (V)
CE Input Voltage: V CE (V)
N
0
Output Voltage
1.5
XC6602B181xR-G
4
CE Input Voltage
CE Input Voltage
2
Time (40μs/div)
VCE=0V→3.6V(tr=5μs)
IOUT=100mA
4
VCE=0V→3.6V(tr=5μs)
IOUT=100mA
-6
-0.5
Time (200μs/div)
0
XC6602A181xR-G
2
-0.4
XC6602B121xR-G
Output Voltage: V OUT (V)
VCE=0V→3.6V(tr=5μs)
IOUT=100mA
-4
-6
0
Time (40μs/div)
0
-2
0.4
Output Voltage
XC6602A121xR-G
2
1.2
0.8
-2
Time (200μs/div)
4
CE Input Voltage
1.6
Output Voltage: V OUT (V)
-4
VCE=0V→3.6V(tr=5μs)
IOUT=100mA
2
CE Input Voltage
0
-2
3
2
Output Voltage
-4
-6
4
1
0
Time (40μs/div)
-1
Output Voltage: VOUT (V)
2
1.6
CE Input Voltage: V CE(V)
CE Input Voltage: V CE (V)
Input Current: IIN (mA)
4
XC6602B051xR-G
Output Voltage: V OUT (V)
VCE=0V→3.6V(tr=5μs)
IOUT=100mA
Output Voltage: V OUT (V)
XC6602A051xR-G
XC6602
Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃
(15)入力立ち上がり過渡応答特性例
(15) VIN Rising Response Time
XC6602A051xR-G
CIN=OPEN
VIN=0V→0.8V(tr=5μs), IOUT=100mA
1
Input Voltage
1.2
0
0.8
-0.5
0.4
Output Voltage
-1
0
-1.5
Output Voltage: V OUT (V)
Input Voltage: V IN(V)
0.5
1.6
-0.4
Time (200μs/div)
XC6602A121xR-G
Input Voltage: V IN(V)
1
Input Voltage
0
-1
2
1.5
1
Output Voltage
-2
0.5
0
-3
Output Voltage: V OUT (V)
2
CIN=OPEN
VIN =0V→1.5V(tr=5μ), IOUT=100mA
-0.5
Time (200μs/div)
XC6602A181xR-G
CIN=OPEN
VIN =0V→2.1V(tr=5μs), IOUT=100mA
3
Input Voltage: V IN(V)
Input Voltage
2
3
1
2
0
Output Voltage
-1
-2
1
0
Time (200μs/div)
Output Voltage: V OUT (V)
4
-1
21/26
XC6602 Series
■TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
* Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃
(16) Bias Voltage Ripple Rejection
Rate
(17) Input Voltage Ripple Rejection
Rate
XC6602x051xR-G
CBIAS=OPEN
VBIAS=3.6VDC +0.2Vp-pAC, IOUT=100mA
100
90
80
70
60
50
40
30
20
10
0
V IN_PSRR (dB)
V BIAS_PSRR (dB)
XC6602x051xR-G
0.01
0.1
1
10
100
1000
10000
CIN =OPEN
VIN =0.8VDC +0.2Vp-pAC, IOUT=100mA
100
90
80
70
60
50
40
30
20
10
0
0.01
0.1
1
Frequency (kHz)
XC6602x121xR-G
1
10
100
1000
100
90
80
70
60
50
40
30
20
10
0
10000
0.01
0.1
V BIAS_PSRR (dB)
V IN_PSRR (dB)
1
10
100
Frequency (kHz)
22/26
10
100
1000
10000
CIN =OPEN
VIN =2.1VDC +0.2Vp-pAC , IOUT=100mA
CBIAS=OPEN
VBIAS=3.6VDC +0.2Vp-pAC, IOUT=100mA
0.1
1
XC6602x181xR-G
XC6602x181xR-G
0.01
10000
Frequency (kHz)
Frequency (kHz)
100
90
80
70
60
50
40
30
20
10
0
1000
CIN =OPEN
VIN =1.5VDC +0.2Vp-pAC, IOUT=100mA
VIN_PSRR (dB)
V BIAS_PSRR (dB)
100
90
80
70
60
50
40
30
20
10
0
0.1
100
XC6602x121xR-G
CBIAS=OPEN
VBIAS=3.6VDC +0.2Vp-pAC, IOUT=100mA
0.01
10
Frequency (kHz)
1000
10000
100
90
80
70
60
50
40
30
20
10
0
0.01
0.1
1
10
100
Frequency (kHz)
1000
10000
XC6602
Series
■PACKAGING INFORMATION
For the latest package information go to, www.torexsemi.com/technical-support/packages
PACKAGE
OUTLINE / LAND PATTERN
THERMAL CHARACTERISTICS
SOT-26W
SOT-26W PKG
SOT-26W Power Dissipation
SOT-89-5
SOT-89-5 PKG
SOT-89-5 Power Dissipation
USP-6C
USP-6C PKG
USP-6C Power Dissipation
WLP-5-02
WLP-5-02 PKG
WLP-5-02 Power Dissipation
23/26
XC6602 Series
■MARKING RULE
① represents product series
MARK
PRODUCT SERIES
P
XC6602A****-G
XC6602B****-G
R
② represents voltage range
6
①
MARK
OUTPUT VOLTAGE (V)
MARK
OUTPUT VOLTAGE (V)
A
B
C
D
E
F
H
K
L
M
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
N
P
R
S
T
U
V
X
Y
Z
1.5
1.6
1.7
1.8
-
③④ represents production lot number
01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, B1 to ZZ in order.
(G, I, J, O, Q, W excluded)
*No character inversion used.
24/26
SOT-26W
1
5
②
4
③ ④
2
3
XC6602
Series
■MARKING RULE (Continued)
SOT-89-5
USP-6C
① represents product series
③
⑤
④
⑤
①
2
PRODUCT SERIES
A
XC6602A****-G
XC6602B****-G
B
1
2
3
WLP-5-02
③ represents voltage range
MARK
OUTPUT VOLTAGE (V)
MARK
OUTPUT VOLTAGE (V)
0
1
2
3
4
5
6
7
8
9
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
A
B
C
D
E
F
H
K
L
M
1.5
1.6
1.7
1.8
-
N
P
R
S
T
U
V
X
Y
Z
-
2
1
4
① ② ③
OUTPUT VOLTAGE (V)
④ ⑤
MARK
5
4
3
MARK
6
②
1
④
② represents regulator type
③
XC6602******-G
4
②
PRODUCT SERIES
7
2
①
MARK
5
3
④⑤ represents production lot number
01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ, B1 to ZZ in order.
(G, I, J, O, Q, W excluded)
25/26
XC6602 Series
1.
The product and product specifications contained herein are subject to change without notice to
improve performance characteristics. Consult us, or our representatives before use, to confirm that
the information in this datasheet is up to date.
2.
The information in this datasheet is intended to illustrate the operation and characteristics of our
products. We neither make warranties or representations with respect to the accuracy or
completeness of the information contained in this datasheet nor grant any license to any intellectual
property rights of ours or any third party concerning with the information in this datasheet.
3.
Applicable export control laws and regulations should be complied and the procedures required by
such laws and regulations should also be followed, when the product or any information contained in
this datasheet is exported.
4.
The product is neither intended nor warranted for use in equipment of systems which require
extremely high levels of quality and/or reliability and/or a malfunction or failure which may cause loss
of human life, bodily injury, serious property damage including but not limited to devices or equipment
used in 1) nuclear facilities, 2) aerospace industry, 3) medical facilities, 4) automobile industry and
other transportation industry and 5) safety devices and safety equipment to control combustions and
explosions. Do not use the product for the above use unless agreed by us in writing in advance.
5.
Although we make continuous efforts to improve the quality and reliability of our products;
nevertheless Semiconductors are likely to fail with a certain probability. So in order to prevent personal
injury and/or property damage resulting from such failure, customers are required to incorporate
adequate safety measures in their designs, such as system fail safes, redundancy and fire prevention
features.
6.
Our products are not designed to be Radiation-resistant.
7.
Please use the product listed in this datasheet within the specified ranges.
8.
We assume no responsibility for damage or loss due to abnormal use.
9.
All rights reserved. No part of this datasheet may be copied or reproduced unless agreed by Torex
Semiconductor Ltd in writing in advance.
TOREX SEMICONDUCTOR LTD.
26/26