0
登录后你可以
  • 下载海量资料
  • 学习在线课程
  • 观看技术视频
  • 写文章/发帖/加入社区
会员中心
创作中心
发布
  • 发文章

  • 发资料

  • 发帖

  • 提问

  • 发视频

创作活动
XC6602B151MR-G

XC6602B151MR-G

  • 厂商:

    TOREX(特瑞仕)

  • 封装:

    SOT-26P

  • 描述:

    1A 0.5V INPUT VOLTAGE HIGH SPEED

  • 详情介绍
  • 数据手册
  • 价格&库存
XC6602B151MR-G 数据手册
XC6602 Series ETR03045-007b 1A, 0.5V Low Input Voltage, High Speed LDO Regulator ■GENERAL DESCRIPTION The XC6602 series is a low voltage input (0.5V) operation and provides high accuracy ±15mV/±20mV and can supply large current efficiently due to its ultra low on-resistance even at low output voltages. The series is ideally suited to the applications which require high current in low input/output voltages and consists of a Nch driver transistor, a voltage reference, an error amplifier, a current limiter, a fold-back circuit, a thermal shutdown (TSD) circuit, an under voltage lock out (UVLO) circuit, a soft-start circuit and a phase compensation circuit. Output voltage is selectable in 0.1V increments within a range of 0.5V to 1.8V using laser trimming technology and ceramic capacitors can be used for the output stabilization capacitor (CL). The inrush current (IRUSH) from VIN to VOUT for charging CL at start-up can be reduced and makes the VIN stable. The soft-start time is optimized internally. The CE function enables the output to be turned off and the series to be put in stand-by mode resulting in greatly reduced power consumption. At the time of entering the stand-by mode, the series enables the electric charge at the output capacitor (CL) to be discharged via the internal switch. As a result the VOUT pin quickly returns to the VSS level. The CE pull-down function keeps the IC to be in stand-by mode even if the CE pin is left open. ■FEATURES ■APPLICATIONS Smart phones / Mobile phones Digital still cameras / Camcorders Note PC / Tablet PC E-book Readers / Electronic dictionaries Wireless LAN ● ● ● ● ● Maximum Output Current : 1A (1.3A Limit) ON Resistance : 0.15Ω@VBIAS=3.6V,VOUT=1.2V Bias Voltage Range : 2.5V ~ 6.0V Input Voltage Range : 0.5V ~ 3.0V Output Voltage Range : 0.5V ~ 1.8V (0.1V increments) Output Voltage Accuracy : ±0.015V@VOUT<1.2V Ripple Rejection : Low Power Consumption : 100μA (VBIAS), 6.5μA(VIN)@VOUT=1.2V Stand-by Current : 0.01μA (VBIAS), 0.01μA (VIN) Under-voltage Lockout : 1.8V (VBIAS), 0.4V (VIN) Thermal Shutdown : 150℃@detect, 125℃@release Protection Circuit : Fold-back Current Limit, TSD, UVLO Function : Built-in Soft-start ±0.020@VOUT≧1.2V 60dB@f=1kHz (VBIAS_PSRR) 75dB@f=1kHz(VIN_PSRR) CE Pull-Down (Active High) CL Auto Discharge Operating Ambient Temperature Output Capacitor Packages Environmentally Friendly ■ TYPICAL APPLICATION CIRCUIT : : : : -40℃~ 85℃ Ceramic Capacitor Compatible (2.2μF) USP-6C, SOT-26W, SOT-89-5,WLP-5-02 EU RoHS Compliant, Pb Free ■TYPICAL PERFORMANCE CHARACTERISTICS ●Dropout Voltage vs. Output Current 3.3V I/O XC6602x121MR-G 1.2V VBIAS System LSI XC6602 VOUT VIN Input CBIAS 1.0μF CIN 1.0μF VCE=VBIAS, CBIAS=CIN=1.0μF, CL =2.2μF Ta=25℃ core1 CE VSS 1.0V CL 2.2μF core2 250 Dropout Voltage: Vdif(mV) HIGH  EFFICIENCY Step-Down DC/DC  Converter VBIAS=3.3V 200 VBIAS=3.6V VBIAS=5.0V 150 100 50 0 0 200 400 600 800 1000 Output Current: I OUT(mA) 1/26 XC6602 Series ■BLOCK DIAGRAMS ・Type A VBIAS VIN Soft Start Voltage Reference + Error Amp - VOUT ON/OFF Control CE Under Voltage Lock Out CE/ each circuit CE Thermal Shutdown Current Limit R1 CE/ RDCHG R pull-down R2 VSS ・Type B VBIAS VIN Voltage Reference + Error Amp - VOUT ON/OFF Control CE Under Voltage Lock Out CE/ each circuit CE Thermal Shutdown Current Limit R1 CE/ RDCHG R pull-down R2 VSS * Diodes inside the circuits are ESD protection diodes and parasitic diodes. ■PRODUCT CLASSIFICATION 1)Ordering Information XC6602①②③④⑤⑥-⑦(*1) DESIGNATOR With soft-start circuit built-in, can be selected from with or without functions ITEM SYMBOL DESCRIPTION A Soft-start included ① Type B Soft-start excluded Output Voltage 05 ~ 18 ②③ e.g. 1.2V → ②=1, ③=2 ④ Output Voltage Accuracy 1 ±0.015V (VOUT<1.2V), ±0.020V (VOUT≧1.2V) ER-G USP-6C (3,000pcs/Reel) MR-G SOT-26W (3,000pcs/Reel) (*1) ⑤⑥-⑦ Packages (Order Unit) PR-G SOT-89-5 (1,000pcs/Reel) 0R-G WLP-5-02 (3,000pcs/Reel) (*1) The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant. 2) Selection Guide TYPE A B 2/26 SOFTSTART CURRENT LIMITTER THERMAL SHUTDOWN UVLO CE PULL-DOWN RESISTOR CL AUTO-DISCHARGE Yes No Yes Yes Yes Yes Yes Yes Yes Yes Yes Yes XC6602 Series ■PIN CONFIGURATION VOUT 1 CE 6 1 VBIAS NC 5 2 VSS VOUT 4 3 VIN 4 VIN 5 VSS CE 2 3 VBIAS WLP-5-02 (BOTTOM VIEW) USP-6C (BOTTOM VIEW) VBIAS VSS VIN 6 5 4 1 2 3 CE NC VOUT SOT-26W (TOP VIEW) VOUT VIN 5 2 4 1 2 3 CE VSS VBIAS SOT-89-5 (TOP VIEW) *The dissipation pad for the USP-6C package should be solder-plated in recommended mount pattern and metal masking so as to enhance mounting strength and heat release. If the pad needs to be connected to other pins, it should be connected to the VSS (No. 2) pin. ■PIN ASSIGNMENT PIN NUMBER PIN NAME FUNCTIONS 3 VBIAS Power Supply Input 5 VSS Ground 4 VIN Driver Transistor Input 1 VOUT Output - - NC No Connection 1 2 CE ON/OFF Control USP-6C SOT-26W SOT-89-5 WLP-5-02 1 6 3 2 5 2 3 4 4 4 3 5 5 2 6 1 ■FUNCTION CHART XC6602 Series, Type A/B PIN NAME SIGNAL L H OPEN CE STATUS Stand-by Active Stand-by ■ABSOLUTE MAXIMUM RATINGS PARAMETER Bias Voltage Input Voltage SYMBOL VBIAS VIN Output Voltage VOUT CE Input Voltage VCE USP-6C Power Dissipation (Ta=25℃) SOT-26W Pd SOT-89-5 WLP-5-02 Operating Ambient Temperature Storage Temperature (*1) Topr Tstg RATINGS VSS - 0.3 ~ VSS + 6.5 VSS - 0.3 ~ VSS + 6.5 VSS - 0.3 ~ VBIAS + 0.3 ≦ VSS + 6.5 VSS - 0.3 ~ VIN + 0.3 ≦ VSS + 6.5 VSS - 0.3 ~ VSS + 6.5 120 (IC only) 1000 (40mm x 40mm Standard board)(*1) 1250 (JESD51-7 board )(*1) 250 (IC only) 600 (40mm x 40mm Standard board)(*1) 830 (JESD51-7 board )(*1) 500 (IC only) 1300 (40mm x 40mm Standard board)(*1) 1750 (JESD51-7 board )(*1) 750 (40mm x 40mm Standard board)(*1) -40 ~ 85 -55 ~ 125 UNITS V V V V V mW ℃ ℃ The power dissipation figure shown is PCB mounted and is for reference only. Please refer to PACKAGING INFORMATION for the mounting condition. 3/26 XC6602 Series ■ELECTRICAL CHARACTERISTICS PARAMETER SYMBOL Bias Voltage Input Voltage VBIAS VIN Output Voltage VOUT(E)(*2) Maximum Output Current(*4) IOUTMAX Load Regulation (WLP-5-02) Load Regulation (USP-6C,SOT-26W,SOT-89-5) Dropout Voltage Supply Current 1(*9) CONDITIONS VOUT(T)<1.2V VOUT(T)≧1.2V VOUT(T)≦1.2V, VBIAS=VCE=2.5V VOUT(T)>1.2V,VBIAS=VCE=VOUT(T)+1.3V IOUT=100mA Ta=25℃ MIN TYP MAX UNITS CIRCUIT 2.5 0.5 -0.015 -0.020 - 6.0 3.0 +0.015 +0.020 V V ① ① V ① VOUT(T)(*3) 1.0 - - A ① ΔVOUT 1mA≦IOUT≦1A - 13 26 mV ① ΔVOUT 1mA≦IOUT≦1A - 37 68 mV ① Vdif (*5) IBIAS IOUT=1A IOUT=0A IOUT=0A μA ② Stand-by Current 1 Stand-by Current 2 IBIAS_STB IIN_STB 143 8.7 14.2 0.10 0.15 ① ② IIN 100 0.01 0.01 mV μA Supply Current 2 76 0.1 3.9 - μA μA ② ② Bias Line Regulation ΔVOUT/ (ΔVBIAS・VOUT) - 0.01 0.10 %/V ① - 0.01 0.10 %/V ① VSS 2.5 VSS 0.5 - 1.28 6.0 0.23 3.0 V V V V ① ① ① ① - ±30 - ppm/℃ ① - 60 - dB ③ - 75 - dB ③ 1.0 - 1.3 90 - A mA ① ① VOUT(T)<1.2V VOUT(T)≧1.2V VBIAS=6.0V,VIN=3.0V,VCE=VSS VBIAS=6.0V,VIN=3.0V,VCE=VSS VOUT(T)≦1.2V,VCE=VBIAS 2.5V≦VBIAS≦6.0V VOUT(T)>1.2V,VCE=VBIAS VOUT(T)+1.3V≦VBIAS≦6.0V E-1(*8) Bias UVLO Voltage Bias UVLO Release Voltage Input UVLO Voltage Input UVLO Release Voltage Output Voltage Temperature Characteristics ΔVOUT/ (ΔVIN・VOUT) VBIAS_UVLOD VBIAS_UVLOR VIN_UVLOD VIN_UVLOR ΔVOUT/ (ΔTopr・VOUT) Bias Ripple Rejection Ratio VBIAS_PSRR Input Ripple Rejection Ratio VIN_PSRR Limit Current(*4) Short Current Thermal Shutdown Detect Temperature Thermal Shutdown Release Temperature Thermal Shutdown Hysteresis Width CLAuto-Discharge Resistance CE ”H” Level Voltage CE ”L” Level Voltage CE ”H” Level Current CE ”L” Level Current Soft-Start Time (Type A) (*10) Output Rise Time (Type B) (*10) ILIM ISHORT IOUT=100mA -40℃≦Topr≦85℃ VBIAS=VCE=3.6VDC+0.2Vp-pAC IOUT=100mA,f=1kHz,CBIAS=OPEN VIN=VOUT(T)+0.3VDC+0.2Vp-pAC IOUT=100mA,f=1kHz,CIN=OPEN VOUT=VOUT(E)×0.95 VOUT=VSS TTSD Junction Temperature - 150 - ℃ ① TTSR Junction Temperature - 125 - ℃ ① TTSD - TTSR RDCHG VCEH VCEL ICEH ICEL tSS tON Junction Temperature VCE=VSS,VOUT=VOUT(T) Inrush Current (Type A) IRUSH 130 0.65 VSS 3.2 -0.1 225 - 25 190 6.0 430 - 255 6.00 0.41 10.6 0.1 600 110 70 85 155 215 ℃ Ω V V μA μA μs μs mA mA mA mA ① ① ④ ④ ④ ④ ⑤ ⑤ ⑤ ⑤ ⑤ ⑤ Input Line Regulation VOUT(T)+0.1V≦VIN≦3.0V VBIAS=VCE=6.0V VBIAS=6.0V,VCE=VSS VCE=0V→3.6V,tr=5μs VCE=0V→3.6V,tr=5μs VOUT(T)≦1.2V CL=2.2μF VOUT(T)>1.2V VOUT(T)≦1.2V CL=10μF VOUT(T)>1.2V * 1: Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS=CIN=1.0μF, CL=2.2μF * 2: VOUT(E) = Effective output voltage * 3: VOUT(T) = Nominal output voltage * 4: Mount conditions affect heat dissipation. Maximum output current is not guaranteed when TSD starts to operate earlier. * 5: Vdif = {VIN1(*6)-VOUT1(*7)}. * 6: VIN1 is an input voltage when VOUT1 appears at the output during decreasing input voltage gradually. * 7: VOUT1 is a voltage equal to 98% of the output voltage where VBIAS=VCE=3.6 and VIN=VOUT(T)+0.3V at IOUT=1A is input to the VIN pin. * 8: Please refer to the table E-1 named DROPOUT VOLTAGE CHART * 9: Supply current 1 may be fluctuated because that some bias current flows into the output. * 10: A time between the CE input goes over the CE H threshold and the output reaches VOUT(E)x0.9V. 4/26 XC6602 Series ■ELECTRICAL CHARACTERISTICS (Continued) ●OUTPUT VOLTAGE CHART (WLP-5-02) E-1 NOMINAL DROPOUT VOLTAGE (mV) OUTPUT VBIAS=3.0V VOLTAGE VGS VBIAS=3.3V Vdif(mV) VGS VOUT(T) (V) TYP. MAX. (V) 0.5 2.5 79 134 2.8 0.6 2.4 0.7 2.3 82 139 0.8 2.2 85 144 2.5 0.9 2.1 88 149 2.4 1.0 2.0 91 154 2.3 1.1 1.9 94 159 1.2 1.8 100 1.3 1.7 109 1.4 1.6 1.5 2.7 VBIAS=3.6V Vdif(mV) TYP. MAX. 76 129 2.6 VGS (V) VBIAS=4.2V Vdif(mV) TYP. MAX. VGS (V) VBIAS=5.0V Vdif(mV) TYP. MAX. VGS (V) 3.1 3.7 4.5 3.0 3.6 4.4 2.9 79 134 2.8 82 139 2.2 85 144 2.5 169 2.1 88 149 2.4 184 1.9 91 154 2.3 118 199 1.9 94 159 1.5 130 219 1.8 100 1.6 1.4 144 244 1.7 1.7 1.3 171 289 1.8 1.2 201 339 76 129 3.5 73 124 4.2 2.7 3.3 4.1 2.6 3.2 4.0 3.1 3.9 79 134 82 139 2.2 85 144 2.8 3.6 169 2.1 88 149 2.7 3.5 109 184 2.0 91 154 2.6 3.4 1.6 118 199 1.9 94 159 2.5 79 134 3.3 1.5 130 219 1.8 100 169 2.4 82 139 3.2 2.9 TYP. MAX. 72 122 73 124 76 129 4.3 3.4 3.0 Vdif(mV) 3.8 76 129 3.7 * Dropout voltage is defined as the VGS(=VBIAS–VOUT(E)) of the driver transistor. ●OUTPUT VOLTAGE CHART (USP-6C,SOT-26W,SOT-89-5) E-1 NOMINAL DROPOUT VOLTAGE (mV) OUTPUT VBIAS=3.0V VOLTAGE VGS VBIAS=3.3V Vdif (mV) VGS VOUT(T) (V) TYP. MAX. (V) 0.5 2.5 152 218 2.8 0.6 2.4 0.7 2.3 155 223 0.8 2.2 158 228 2.5 0.9 2.1 162 233 2.4 1.0 2.0 165 238 2.3 1.1 1.9 167 243 1.2 1.8 169 1.3 1.7 1.4 2.7 VBIAS=3.6V Vdif (mV) TYP. MAX. TYP. MAX. VGS (V) VBIAS=5.0V Vdif (mV) TYP. MAX. VGS (V) 3.1 3.7 4.5 3.0 3.6 4.4 146 213 152 218 155 223 2.2 158 228 2.5 253 2.1 162 233 2.4 179 268 2.0 165 238 2.3 1.6 189 283 1.9 167 243 1.5 1.5 202 303 1.8 169 1.6 1.4 213 328 1.7 1.7 1.3 225 373 1.8 1.2 255 423 2.6 Vdif (mV) VGS (V) VBIAS=4.2V 2.9 2.8 146 213 3.5 140 208 4.2 2.7 3.3 4.1 2.6 3.2 4.0 3.1 3.9 3.0 3.8 152 218 155 223 2.2 158 228 2.8 3.6 253 2.1 162 233 2.7 3.5 179 268 2.0 165 238 2.6 3.4 1.6 189 283 1.9 167 243 2.5 152 218 3.3 1.5 202 303 1.8 169 253 2.4 155 223 3.2 146 213 TYP. MAX. 137 206 140 208 146 213 4.3 3.4 2.9 Vdif (mV) 3.7 * Dropout voltage is defined as the VGS(=VBIAS–VOUT(E)) of the driver transistor. 5/26 XC6602 Series ■TEST CIRCUITS ●Circuit ① CBIAS 1.0μF VBIAS VIN V A VOUT CL 2.2μF CIN 1.0μF CE V SW2 V SW1 RL VSS ●Circuit ② A CBIAS 1.0μF VBIAS A V VIN VOUT CL 2.2μF CIN 1.0μF V CE SW1 V VSS ●Circuit ③ SW3 CBIAS 1.0μF VBIAS VIN V SW4 A VOUT CL 2.2μF CIN 1.0μF CE V SW5 SW6 V RL VSS ●Circuit ④ CBIAS 1.0μF V CIN 1.0μF A V V 6/26 VBIAS VIN A VOUT CL 2.2μF CE V VSS RL XC6602 Series ■TEST CIRCUITS (Continued) ●Circuit ⑤ (Timing Chart) Waveform measure IRUSH V Waveform measure CBIAS 1.0μF A VIN CIN 1.0μF Waveform measure A VOUT CL V CE V V Voltage[V] Current[mA] VBIAS RL VSS CE 0V→3.6V Voltage[V] CE 0V→3.6V CE ”H” Level Voltage VOUT VOUT(E)×0.9V CE ”H” Level Voltage IIN VOUT VOUT(E)×0.9V IRUSH Time[μs] tSS XC6602 Series, Type A Time[μs] tON XC6602 Series, Type B 7/26 XC6602 Series ■OPERATIONAL EXPLANATION The voltage divided by resistors R1 and R2 is compared with the internal reference voltage by the error amplifier. The VOUT pin is then driven by the subsequent output signal. The output voltage at the VOUT pin is controlled and stabilized by a system of negative feedback. VBIAS pin is power supply pin for output voltage control circuit, protection circuit and CE circuit. Also, the VBIAS pin supplies some current as output current. VIN pin is connected to a driver transistor and provides output current. In order to obtain high efficient output current through low on-resistance, please take enough VGS (=VBIAS – VOUT(E)) of the driver transistor. VBIAS VIN Soft Start Voltage Reference + Error Amp - VOUT CE ON/OFF Control R pull-down CE/ each circuit CE Under Voltage Lock Out Thermal Shutdown Current Limit R1 CE/ RDCHG R2 VSS Figure1: XC6602 Series, Type A With the XC6602 (Type A), the inrush current (IRUSH) from VIN to VOUT for charging CL at start-up can be reduced and makes the VIN stable. As for the XC6602, the soft-start time in the type A is optimized internally. On the other hand, the type B of the XC6602 does not have the soft-start time function. The XC6602 series includes a combination of a fixed current limiter circuit and a foldback short-circuit protection. When the output current reaches the current limit, the output voltage drops and this operation makes the output current foldback to be decreased. When the junction temperature of the built-in driver transistor reaches the temperature limit, the thermal shutdown circuit operates and the driver transistor will be set to OFF. The IC resumes its operation when the thermal shutdown function is released and the IC’s operation is automatically restored because the junction temperature drops to the level of the thermal shutdown release temperature. When the VBIAS pin and VIN pin voltage drops, the output driver transistor is set to OFF by UVLO function to prevent false output caused by unstable operation of the internal circuitry. When the VBIAS pin voltage and the VIN pin voltage rises at release voltage, the UVLO function is released. The driver transistor is turned ON and start to operate voltage regulation. 8/26 XC6602 Series ■OPERATIONAL EXPLANATION (Continued) The XC6602 internal circuitry can be shutdown via the signal to the CE pin. In shutdown mode with CE low level voltage, the VOUT pin will be pulled down to the VSS level via CL discharge resistance (RDCHG) placed in parallel to R1 and R2. The CE pin has pull-down circuitry so that CE input current flows during IC operation. If the CE pin voltage is taken from VBIAS pin or VSS pin then logic is fixed and the IC will operate normally. However, supply current may increase as a result of through current in the IC's internal circuitry when medium voltage is input. XC6602 series can quickly discharge the electric charge at the output capacitor (CL) via the internal transistor located between the VOUT pin and the VSS pin when a low signal to the CE pin which enables a whole IC circuit put into OFF state. When the IC is disabled, electric charge at the output capacitor (CL) is quickly discharged so that it could avoids malfunction. Discharge time of the output capacitor (CL) is set by the CL auto-discharge resistance (RDCHG) and the output capacitor (CL). By setting time constant of a CL auto-discharge resistance value (RDCHG) and an output capacitor value (CL) as τ(τ= CL x RDCHG), the output voltage after discharge via the internal transistor is calculated by the following formula. Please also note RDCHG is depended on VBIAS. When VBIAS is larger, RDCHG is smaller. V = VOUT(E)×e-t/τ or t=τln(VOUT(E) / V) (V: Output voltage after discharge, VOUT(E) : Initial Output voltage, t: Discharge time, τ: CL auto-discharge resistance RDCHG×CL Output capacitance With the XC6602 series, a stable output voltage is achievable even if used with low ESR capacitors, as a phase compensation circuit is built-in. The output capacitor (CL) should be connected as close to VOUT pin and VSS pin to obtain stable phase compensation. Values required for the phase compensation are as the table below. For a stable power input, please connect an bias capacitor (CBIAS ) between the VBIAS pin and the VSS pin. Also, please connect an input capacitor (CIN) between the VIN pin and the VSS pin. In order to ensure the stable phase compensation while avoiding run-out of values, please use the capacitor (CBIAS, CIN, CL ) which does not depend on bias or temperature too much. The table below shows recommended values of CBIAS, CIN, CL. CHART 1:Recommended Values of CBIAS, CIN, CL (MIN.) OUTPUT VOLTAGE RANGE VOUT(T) BIAS CAPACITOR CBIAS INPUT CAPACITOR CIN OUTPUT CAPACITOR CL 0.5V ~ 1.8V 1.0μF 1.0μF 2.2μF 9/26 XC6602 Series ■NOTES ON USE 1. For temporary, transitional voltage drop or voltage rising phenomenon, the IC is liable to malfunction should the ratings be exceeded. 2. Where wiring impedance is high, operations may become unstable due to noise and/or phase lag depending on output current. Please keep the resistance low for the VBIAS, VIN and VSS wiring in particular. 3. Please wire the CBIAS, CIN and CL as close to the IC as possible. 4. Capacitances of these capacitors (CBIAS, CIN, CL) are decreased by the influences of bias voltage and ambient temperature. Care shall be taken for capacitor selection to ensure stability of phase compensation from the point of ESR influence. 5. When it is used in a quite small input / output dropout voltage, output may go into unstable operation. Please test it thoroughly before using it in production. 6. Torex places an importance on improving our products and their reliability. We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in their systems 7. Note on mounting (WLP-5-02) (1) Mount pad design should be optimized for user's conditions. (2) Sn-AG-Cu is used for the package terminals. If eutectic solder is used, mounting reliability is decreased. Please do not use eutectic solder paste. (3) When underfill agent is used to increase interfacial bonding strength, please take enough evaluation for selection. Some underfill materials and applied conditions may decrease bonding reliability. (4) The IC has exposed surface of silicon material in the top marking face and sides so that it is weak against mechanical damages. Please take care of handling to avoid cracks and breaks. (5) The IC has exposed surface of silicon material in the top marking face and sides. Please use the IC with keeping the circuit open (avoiding short-circuit from the out). (6) Semi-transparent resin is coated on the circuit face of the package. Please be noted that the usage under strong lights may affects device performance. 10/26 XC6602 Series ■ TYPICAL PERFORMANCE CHARACTERISTICS * Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃ (1) Output Voltage vs. Output Current (2) Output Voltage vs. Bias Voltage XC6602x051xR-G 0.6 0.6 0.5 0.5 Output Voltage: V OUT (V) Output Voltage: V OUT (V) XC6602x051MR-G 0.4 VIN=0.8V 0.3 VIN=1.0V 0.2 0.1 0.4 IOUT=0mA 0.3 IOUT=1mA IOUT=100mA 0.2 0.1 0.0 0.0 0 0.5 1 0 1.5 1 Output Current: IOUT (A) 1.4 1.4 1.2 1.2 Output Voltage: V OUT (V) Output Voltage: V OUT (V) 4 5 6 XC6602x121xR-G 1.0 VIN=1.5V VIN=1.7V 0.6 0.4 0.2 0.0 1.0 IOUT=0mA 0.8 IOUT=1mA IOUT=100mA 0.6 0.4 0.2 0.0 0 0.5 1 Output Current: IOUT (A) 1.5 0 1 XC6602x181MR-G Output Voltage: V OUT (V) 1.5 VIN=2.1V VIN=2.3V 1.0 0.5 0.0 0 0.5 1 Output Current: IOUT (A) 2 3 4 Bias Voltage: V BIAS (V) 5 6 XC6602x181xR-G 2.0 Output Voltage: V OUT (V) 3 Bias Voltage: V BIAS (V) XC6602x121MR-G 0.8 2 1.5 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IOUT=0mA IOUT=1mA IOUT=100mA 0 1 2 3 4 Bias Voltage: V BIAS (V) 5 6 * Mount conditions affect heat dissipation. Thermal shutdown may start to operate before reaching the current limit. 11/26 XC6602 Series ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃ XC6602x121MR-G XC6602x051xR-G (3) Output Voltage zvs. Input Voltage (4) Dropout Voltage vs. Output Current 250 Dropout Voltage: Vdif(mV) Output Voltage: V OUT (V) 0.6 0.5 0.4 IOUT=0mA IOUT=1mA 0.3 IOUT=100mA 0.2 0.1 VBIAS =3.0V 200 VBIAS =3.3V VBIAS =3.6V VBIAS =4.2V 150 VBIAS =5.0V 100 50 0 0.0 0 1 2 Input Voltage: V IN(V) 0 3 200 400 600 800 1000 Output Current: IOUT (mA) XC6602x121xR-G XC6602xxx1MR-G 350 1.2 300 Ta=-40℃ 250 Ta=25℃ Dropout Voltage: Vdif(mV) Output Voltage: V OUT (V) IOUT =1A 1.4 1.0 0.8 0.6 IOUT=0mA 0.4 IOUT=100mA IOUT=1mA 0.2 Ta=85℃ 200 150 100 50 0 0.0 0 1 2 1 3 2 3 4 5 6 V GS(*1)(V) Input Voltage: V IN(V) XC6602x181xR-G (*1) VGS is a Gate –Source voltage of the driver transistor that is defined as the value of VBIAS - VOUT(E). A value of the dropout voltage is determined by the value of the VGS. 2.0 Output Voltage: V OUT (V) 1.8 1.6 1.4 1.2 1.0 0.8 IOUT=0mA 0.6 IOUT=1mA 0.4 IOUT=100mA 0.2 0.0 0 1 2 Input Voltage: V IN(V) 12/26 3 XC6602 Series ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃ (5) Supply Bias Current vs. Bias Voltage (6) Supply Input Current vs. Input Voltage (6)入力電流-入力電圧特性例 (5)バイアス電流-バイアス電圧特性例 XC6602x051xR-G XC6602x051xR-G CIN=CBIAS =CL=OPEN CIN=CBIAS =CL=OPEN IOUT =0mA Supply Input Current: IIN(μA) Supply Bias Current: IBIAS (μA) 160 140 120 100 80 Ta=-40℃ Ta=25℃ Ta=85℃ 60 40 20 0 0 1 2 3 4 Bias Voltage: V BIAS (V) 6 0 CIN=CBIAS =CL=OPEN V CE=V BIAS , IOUT =0mA 160 Supply Input Current: IIN(μA) 140 120 100 80 60 40 Ta=-40℃ Ta=25℃ Ta=85℃ 20 0 0 1 2 Ta=-40℃ Ta=25℃ Ta=85℃ 0.5 1 1.5 2 Input Voltage: V IN(V) 3 4 5 20 18 16 14 12 10 8 6 4 2 0 6 Ta=-40℃ Ta=25℃ Ta=85℃ 0 0.5 1 1.5 2 Input Voltage: V IN(V) Supply Input Current: IIN(μA) Supply Bias Current: IBIAS (μA) 140 120 100 80 60 40 Ta=-40℃ Ta=25℃ Ta=85℃ 20 0 1 2 3 2.5 3 XC6602x181xR-G C =CBIAS =CL=OPEN V CE=V BIAS , IOUT =0mA, CIN=CBIAS =CL=OPEN IOUT =0mA Bias Voltage: V BIAS (V)IN 0 3 CIN=CBIAS =CL=OPEN IOUT =0mA XC6602x181xR-G 160 2.5 XC6602x121xR-G XC6602x121xR-G Supply Bias Current: IBIAS (μA) 5 20 18 16 14 12 10 8 6 4 2 0 4 Bias Voltage: V BIAS(V) 5 6 20 18 16 14 12 10 8 6 4 2 0 Ta=-40℃ Ta=25℃ Ta=85℃ 0 0.5 1 1.5 2 2.5 3 Input Voltage: V IN(V) 13/26 XC6602 Series ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃ (7) Output Voltage vs. Ambient Temperature (8) Supply Bias Current vs. Ambient Temperature XC6602x051xR-G XC6602x051xR-G CIN=CBIAS =CL=OPEN IOUT =0mA 160 Supply Bias Current: IBIAs (μA) Output Voltage: V OUT (V) 0.52 140 IOUT=1mA 0.51 IOUT=100mA 120 0.5 100 0.49 80 60 40 0.48 -50 0 50 Ambient Temperature: Ta(℃) -50 100 Supply Bias Current: IBIAs (μA) Output Voltage: V OUT (V) CIN=CBIAS =CL=OPEN IOUT =0mA 160 1.22 IOUT=1mA 1.21 100 XC6602x121xR-G XC6602x121xR-G IOUT=100mA 1.2 1.19 140 120 100 80 60 40 1.18 -50 0 50 Ambient Temperature: Ta(℃) -50 100 Supply Bias Current: IBIAs (μA) IOUT=1mA 1.81 IOUT=100mA 1.8 1.79 1.78 -50 0 50 Ambient Temperature: Ta(℃) 100 CIN=CBIAS = CL=OPEN IOUT =0mA 160 1.82 14/26 0 50 Ambient Temperature: Ta(℃) XC6602x181xR-G XC6602x181xR-G Output Voltage: V OUT (V) 0 50 Ambient Temperature: Ta(℃) 100 140 120 100 80 60 40 -50 0 50 Ambient Temperature: Ta(℃) 100 XC6602 Series ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃ (9) Supply Input Current vs. Ambient Temperature (9)入力電流-周囲温度特性例 XC6602x051xR-G Supply Input Current: IIN(μA) CIN=CBIAS=CL=OPEN IOUT=0mA 3 2 1 0 -50 0 50 100 Ambient Temperature: Ta(℃) XC6602x121xR-G CIN=CBIAS=CL=OPEN IOUT=0mA Supply Input Current: IIN(μA) 12 10 8 6 4 2 0 -50 0 50 100 Ambient Temperature: Ta(℃) XC6602x181xR-G CIN=CBIAS=CL=OPEN IOUT=0mA Supply Input Current: IIN(μA) 16 14 12 10 8 6 4 -50 0 50 Ambient Temperature: Ta(℃) 100 15/26 XC6602 Series ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃ (10) Bias Transient Response (11) Input Transient Response (11)入力過渡応答特性例 (10)バイアス過渡応答特性例 XC6602x051xR-G XC6602x051xR-G CIN=OPEN V IN=0.8V→1.8V(tr=tf=5μs), IOUT =100mA 0.58 0.56 4 0.54 3 0.52 2 0.5 1 Output Voltage: V OUT (V) 5 Bias Voltage Bias Voltage: VBIAS (V) Output Voltage 0.48 Input Voltage 1 0.52 0 0.5 Output Voltage 0.48 0 XC6602x121xR-G XC6602x121xR-G 1.28 5 CIN=OPEN V IN=1.5V→2.5V(tr=tf=5μs), IOUT =100mA 3.5 4 1.24 3 1.22 2 1.2 1 Output Voltage Bias Voltage: V BIAS (V) 1.26 Output Voltage: V OUT (V) Input Voltage Bias Voltage 1.18 -1 -2 Time (200μs/div) 1.28 2 0.54 Time (200μs/div) CBIAS =OPEN V BIAS =3.0V→4.0V(tr=tf=5μs) IOUT =100mA Output Voltage: V OUT (V) 0.56 3 1.26 2.5 1.24 1.5 1.22 0.5 Output Voltage 1.2 -0.5 1.18 0 Input Voltage: V IN(V) Output Voltage: V OUT (V) 0.58 Input Voltage: V IN(V) CBIAS =OPEN V BIAS =3.0V→4.0V(tr=tf=5μs), IOUT =100mA -1.5 Time (200μs/div) Time (200μs/div) XC6602x181xR-G XC6602x181xR-G 1.88 CBIAS =OPEN V BIAS =3.6V→4.6V(tr=tf=5μs) IOUT =100mA CIN=OPEN V IN=2.1V→3.1V(tr=tf=5μs), IOUT =100mA 1.88 5 4 Bias Voltage 3 1.82 2 1.8 1 Output Voltage 1.78 0 Time (200μs/div) 16/26 Output Voltage: V OUT (V) 1.84 1.86 4 Bias Voltage: V BIAS (V) Output Voltage: V OUT (V) 1.86 3 1.84 2 1.82 1 Output Voltage 1.8 0 1.78 Input Voltage: V IN(V) Input Voltage -1 Time (200μs/div) XC6602 Series ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃ (12) Load Transient Response XC6602x051xR-G IOUT =1mA⇔100mA(tr=tf=5μs) 0.2 Output Current 0.62 0.1 0.58 0 0.54 -0.1 0.5 Outpur Current: IOUT (A) Output Voltage: VOUT (V) 0.66 -0.2 Output Voltage 0.46 -0.3 Time (200μs/div) XC6602x121xR-G 1.36 IOUT =1mA⇔100mA(tr=tf=5μs) 0.2 1.32 0.1 1.28 0 1.24 -0.1 1.2 -0.2 Output Voltage 1.16 Outpur Current: IOUT (A) Output Voltage: V OUT (V) Output Current -0.3 Time (200μs/div) XC6602x181xR-G 1.96 IOUT =1mA⇔100mA(tr=tf=5μs) 0.2 0.1 1.88 0 1.84 -0.1 1.8 -0.2 Output Voltage 1.76 Outpur Current: IOUT (A) Output Voltage: V OUT (V) Output Current 1.92 -0.3 Time (200μs/div) 17/26 XC6602 Series ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃ (13) CE Input Voltage Response XC6602A051xR-G XC6602A051xR-G -2 2 100 Input Current 50 -4 0 -6 -50 0 -2 0 -2 200 4 150 2 100 Input Current 50 -4 0 -6 -50 -2 CE Input Voltage 18/26 Input Current -4 0 -50 150 Input Current 50 0 -50 VCE=0V→3.6V(tr=5μs) I OUT =100mA 4 200 100 Time (200μs/div) 50 XC6602A181xR-G CE Input Voltage: V CE(V) CE Input Voltage: VCE (V) -6 150 100 -6 Input Current: IIN (mA) VCE=0V→3.6V(tr=5μs) IOUT=100mA -4 CE Input Voltage 200 Time (50μs/div) 0 -2 VCE=0V→3.6V(tr=5μs) IOUT=100mA Rush Current XC6602A181xR-G 2 0 -50 0 Time (200μs/div) 4 Input Current XC6602A121xR-G CE Input Voltage: V CE(V) CE Input Voltage 50 Time (50μs/div) Input Current: IIN (mA) CE Input Voltage: V CE(V) 2 Rush Current -6 XC6602A121xR-G 4 150 100 -4 Time (200μs/div) VCE=0V→3.6V(tr=5μs) IOUT=100mA CE Input Voltage Input Current: IIN (mA) 0 150 200 Input Current: IIN (mA) CE Input Voltage 4 2 0 CE Input Voltage Rush Current -2 200 150 100 50 Input Current -4 -6 0 Time (50μs/div) -50 Input Current: IIN (mA) 2 200 CE Input Voltage: V CE (V) CE Input Voltage: VCE (V) 4 VCE=0V→3.6V(tr=5μs) IOUT=100mA Input Current: IIN (mA) VCE=0V→3.6V(tr=5μs) IOUT=100mA XC6602 Series ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃ (13)CE Input Voltage Response (Continued) (13)突入電流特性例 (14)CE XC6602A051xR-G 4 300 2 200 -2 100 -100 0 -2 0 -6 -4 400 4 300 2 200 -2 100 Input Current -6 0 -4 Input Current 0 -100 CL=10μF VCE=0V→3.6V(tr=5μs), IOUT=100mA 4 100 0 -100 CE Input Voltage: V CE (V) -2 Input Current: IIN (mA) 300 200 Time (200μs/div) 100 XC6602A181xR-G 0 -6 300 Time (50μs/div) 400 Input Current 400 200 -2 CL=10μF VCE=0V→3.6V(tr=5μs), IOUT=100mA -4 CE Input Voltage -6 -100 CE Input Voltage CL =10μF VCE=0V→3.6V(tr=5μs), IOUT=100mA Rush Current XC6602A181xR-G 2 -100 0 Time (200μs/div) 4 0 XC6602A121xR-G CE Input Voltage: V CE (V) CE Input Voltage 100 Time (50μs/div) Input Current: IIN (mA) CE Input Voltage: V CE(V) 2 Rush Current Input Current XC6602A121xR-G 4 200 -4 Time (200μs/div) CL=10μF VCE=0V→3.6V(tr=5μs), IOUT=100mA 300 Input Current: IIN (mA) -6 0 CE Input Voltage 2 400 CE Input Voltage 0 300 200 Rush Current -2 -4 100 Input Current -6 0 Input Current: IIN (mA) Input Current 400 Input Current: IIN (mA) 400 0 -4 CL =10μF VCE=0V→3.6V(tr=5μs), IOUT=100mA CE Input Voltage: V CE (V) CE Input Voltage XC6602A051xR-G Input Current: IIN (mA) CE Input Voltage: V CE (V) 2 CE Input Voltage: V CE (V) IN 4 CL =10μF VCE=0V→3.6V(tr=5μs), IOUT=100mA -100 Time (50μs/div) 19/26 XC6602 Series ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃ (14) CE Rising Response Time (15) CE Input Voltage 4 1.2 2 0 0.8 -2 0.4 Output Voltage -6 0 -0.4 0 -4 -6 1.5 2 1 Output Voltage 0.5 0 CE Input Voltage: V CE (V) CE Input Voltage: V CE (V) Input Current: IIN (mA) CE Input Voltage 2 4 2 Output Voltage -4 -6 20/26 3 1 0 Time (200μs/div) -1 CE Input Voltage: V CE (V) -2 1 -2 0.5 -4 0 -0.5 VCE=0V→3.6V(tr=5μs) IOUT=100mA 4 Output Voltage: VOUT (V) CE Input Voltage: V CE (V) N 0 Output Voltage 1.5 XC6602B181xR-G 4 CE Input Voltage CE Input Voltage 2 Time (40μs/div) VCE=0V→3.6V(tr=5μs) IOUT=100mA 4 VCE=0V→3.6V(tr=5μs) IOUT=100mA -6 -0.5 Time (200μs/div) 0 XC6602A181xR-G 2 -0.4 XC6602B121xR-G Output Voltage: V OUT (V) VCE=0V→3.6V(tr=5μs) IOUT=100mA -4 -6 0 Time (40μs/div) 0 -2 0.4 Output Voltage XC6602A121xR-G 2 1.2 0.8 -2 Time (200μs/div) 4 CE Input Voltage 1.6 Output Voltage: V OUT (V) -4 VCE=0V→3.6V(tr=5μs) IOUT=100mA 2 CE Input Voltage 0 -2 3 2 Output Voltage -4 -6 4 1 0 Time (40μs/div) -1 Output Voltage: VOUT (V) 2 1.6 CE Input Voltage: V CE(V) CE Input Voltage: V CE (V) Input Current: IIN (mA) 4 XC6602B051xR-G Output Voltage: V OUT (V) VCE=0V→3.6V(tr=5μs) IOUT=100mA Output Voltage: V OUT (V) XC6602A051xR-G XC6602 Series ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃ (15)入力立ち上がり過渡応答特性例 (15) VIN Rising Response Time XC6602A051xR-G CIN=OPEN VIN=0V→0.8V(tr=5μs), IOUT=100mA 1 Input Voltage 1.2 0 0.8 -0.5 0.4 Output Voltage -1 0 -1.5 Output Voltage: V OUT (V) Input Voltage: V IN(V) 0.5 1.6 -0.4 Time (200μs/div) XC6602A121xR-G Input Voltage: V IN(V) 1 Input Voltage 0 -1 2 1.5 1 Output Voltage -2 0.5 0 -3 Output Voltage: V OUT (V) 2 CIN=OPEN VIN =0V→1.5V(tr=5μ), IOUT=100mA -0.5 Time (200μs/div) XC6602A181xR-G CIN=OPEN VIN =0V→2.1V(tr=5μs), IOUT=100mA 3 Input Voltage: V IN(V) Input Voltage 2 3 1 2 0 Output Voltage -1 -2 1 0 Time (200μs/div) Output Voltage: V OUT (V) 4 -1 21/26 XC6602 Series ■TYPICAL PERFORMANCE CHARACTERISTICS (Continued) * Unless otherwise stated, VBIAS=VCE=3.6V, VIN=VOUT(T)+0.3V, IOUT=1mA, CBIAS= CIN=1.0μF, CL=2.2μF, Ta=25℃ (16) Bias Voltage Ripple Rejection Rate (17) Input Voltage Ripple Rejection Rate XC6602x051xR-G CBIAS=OPEN VBIAS=3.6VDC +0.2Vp-pAC, IOUT=100mA 100 90 80 70 60 50 40 30 20 10 0 V IN_PSRR (dB) V BIAS_PSRR (dB) XC6602x051xR-G 0.01 0.1 1 10 100 1000 10000 CIN =OPEN VIN =0.8VDC +0.2Vp-pAC, IOUT=100mA 100 90 80 70 60 50 40 30 20 10 0 0.01 0.1 1 Frequency (kHz) XC6602x121xR-G 1 10 100 1000 100 90 80 70 60 50 40 30 20 10 0 10000 0.01 0.1 V BIAS_PSRR (dB) V IN_PSRR (dB) 1 10 100 Frequency (kHz) 22/26 10 100 1000 10000 CIN =OPEN VIN =2.1VDC +0.2Vp-pAC , IOUT=100mA CBIAS=OPEN VBIAS=3.6VDC +0.2Vp-pAC, IOUT=100mA 0.1 1 XC6602x181xR-G XC6602x181xR-G 0.01 10000 Frequency (kHz) Frequency (kHz) 100 90 80 70 60 50 40 30 20 10 0 1000 CIN =OPEN VIN =1.5VDC +0.2Vp-pAC, IOUT=100mA VIN_PSRR (dB) V BIAS_PSRR (dB) 100 90 80 70 60 50 40 30 20 10 0 0.1 100 XC6602x121xR-G CBIAS=OPEN VBIAS=3.6VDC +0.2Vp-pAC, IOUT=100mA 0.01 10 Frequency (kHz) 1000 10000 100 90 80 70 60 50 40 30 20 10 0 0.01 0.1 1 10 100 Frequency (kHz) 1000 10000 XC6602 Series ■PACKAGING INFORMATION For the latest package information go to, www.torexsemi.com/technical-support/packages PACKAGE OUTLINE / LAND PATTERN THERMAL CHARACTERISTICS SOT-26W SOT-26W PKG SOT-26W Power Dissipation SOT-89-5 SOT-89-5 PKG SOT-89-5 Power Dissipation USP-6C USP-6C PKG USP-6C Power Dissipation WLP-5-02 WLP-5-02 PKG WLP-5-02 Power Dissipation 23/26 XC6602 Series ■MARKING RULE ① represents product series MARK PRODUCT SERIES P XC6602A****-G XC6602B****-G R ② represents voltage range 6 ① MARK OUTPUT VOLTAGE (V) MARK OUTPUT VOLTAGE (V) A B C D E F H K L M 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 N P R S T U V X Y Z 1.5 1.6 1.7 1.8 - ③④ represents production lot number 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to Z9, B1 to ZZ in order. (G, I, J, O, Q, W excluded) *No character inversion used. 24/26 SOT-26W 1 5 ② 4 ③ ④ 2 3 XC6602 Series ■MARKING RULE (Continued) SOT-89-5 USP-6C ① represents product series ③ ⑤ ④ ⑤ ① 2 PRODUCT SERIES A XC6602A****-G XC6602B****-G B 1 2 3 WLP-5-02 ③ represents voltage range MARK OUTPUT VOLTAGE (V) MARK OUTPUT VOLTAGE (V) 0 1 2 3 4 5 6 7 8 9 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 A B C D E F H K L M 1.5 1.6 1.7 1.8 - N P R S T U V X Y Z - 2 1 4 ① ② ③ OUTPUT VOLTAGE (V) ④ ⑤ MARK 5 4 3 MARK 6 ② 1 ④ ② represents regulator type ③ XC6602******-G 4 ② PRODUCT SERIES 7 2 ① MARK 5 3 ④⑤ represents production lot number 01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ, B1 to ZZ in order. (G, I, J, O, Q, W excluded) 25/26 XC6602 Series 1. The product and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date. 2. The information in this datasheet is intended to illustrate the operation and characteristics of our products. We neither make warranties or representations with respect to the accuracy or completeness of the information contained in this datasheet nor grant any license to any intellectual property rights of ours or any third party concerning with the information in this datasheet. 3. Applicable export control laws and regulations should be complied and the procedures required by such laws and regulations should also be followed, when the product or any information contained in this datasheet is exported. 4. The product is neither intended nor warranted for use in equipment of systems which require extremely high levels of quality and/or reliability and/or a malfunction or failure which may cause loss of human life, bodily injury, serious property damage including but not limited to devices or equipment used in 1) nuclear facilities, 2) aerospace industry, 3) medical facilities, 4) automobile industry and other transportation industry and 5) safety devices and safety equipment to control combustions and explosions. Do not use the product for the above use unless agreed by us in writing in advance. 5. Although we make continuous efforts to improve the quality and reliability of our products; nevertheless Semiconductors are likely to fail with a certain probability. So in order to prevent personal injury and/or property damage resulting from such failure, customers are required to incorporate adequate safety measures in their designs, such as system fail safes, redundancy and fire prevention features. 6. Our products are not designed to be Radiation-resistant. 7. Please use the product listed in this datasheet within the specified ranges. 8. We assume no responsibility for damage or loss due to abnormal use. 9. All rights reserved. No part of this datasheet may be copied or reproduced unless agreed by Torex Semiconductor Ltd in writing in advance. TOREX SEMICONDUCTOR LTD. 26/26
XC6602B151MR-G
物料型号:XC6602系列 器件简介:XC6602系列是一种低压输入(0.5V)的高效率LDO调节器,提供±15mV/±20mV的高精度输出电压,并且即使在低输出电压下也能提供大电流。该系列非常适合需要在低输入/输出电压下提供高电流的应用场景。

引脚分配: - VBIAS:电源输入 - VSS:地 - VIN:驱动晶体管输入 - VOUT:输出 - CE:开/关控制 - NC:无连接

参数特性: - 最大输出电流:1A(限制为1.3A) - 偏置电压范围:2.5V至6.0V - 输入电压范围:0.5V至3.0V - 输出电压范围:0.5V至1.8V,以0.1V为增量 - 输出电压精度:VOUT小于1.2V时±0.015V,VOUT大于等于1.2V时±0.020V - 纹波抑制:60dB@1kHz (VBIAS_PSRR),75dB@1kHz(VIN_PSRR) - 待机电流:100μA (VBIAS),6.5μA(VIN)@VOUT=1.2V

功能详解: - 软启动功能:内部优化软启动时间,减少启动时的电流冲击。 - 电流限制和短路保护:固定电流限制电路和折叠式短路保护。 - 热关断保护(TSD):当内部驱动晶体管的结温达到限制温度时,热关断电路操作,驱动晶体管关闭。 - 欠压锁定(UVLO):当VBIAS和VIN电压下降时,UVLO功能关闭输出驱动晶体管以防止误操作。

应用信息: - 智能手机/移动电话 - 数码相机/摄像机 - 笔记本电脑/平板电脑 - 电子阅读器/电子词典 - 无线局域网

封装信息: - USP-6C、SOT-26W、SOT-89-5、WLP-5-02 - 符合欧盟RoHS标准,无铅
XC6602B151MR-G 价格&库存

很抱歉,暂时无法提供与“XC6602B151MR-G”相匹配的价格&库存,您可以联系我们找货

免费人工找货