XP263N1001TR-G
ETR11048-001
N-channel MOSFET 60V, 1A
■APPLICATIONS
■FEATURES
On-State Resistance
Driving voltage
Environmentally Friendly
: RDS(on)=0.25Ω @VGS =10V
: 4.5V
: EU RoHS Compliant, Pb Free
●Switching
■PIN CONFIGURATION
■EQUIVALENT CIRCUIT
●SOT-23(TO-236)
Drain
3
1
Gate
2
Source
■PRODUCT NAME
PRODUCT NAME
PACKAGE
ORDER UNIT
XP263N1001TR-G *
SOT-23(TO-236)
3,000 pcs/ Reel
* The “-G” suffix denotes Halogen and Antimony free as well as being fully EU RoHS compliant
■ABSOLUTE MAXIMUM RATINGS
Ta=25℃
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current (DC)
Drain Current(Pulse) (*1)
Channel Power Dissipation (*2)
Junction Temperature
Storage Temperature
(*1)
SYMBOL
RATINGS
UNIT
VDSS
VGSS
ID
IDP
Pd
TJ
Tstg
60
±20
1
2
0.4
150
-55~150
V
V
A
A
W
℃
℃
PW≦10μs,duty cycle≦1%
(*2)
When implemented on a PCB defined by JESD51-7
1/6
XP263N1001TR-G
■ELECTRICAL CHARACTERISTICS
Ta=25℃
PARAMETER
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
V(BR)DSS
ID= 250μA, VGS= 0V
60
-
-
V
IDSS
VDS= 60V, VGS= 0V
-
-
1
μA
IGSS
VGS= ±20V, VDS= 0V
-
-
±10
μA
Gate Threshold Voltage
VGS(off)
ID= 250uA, VDS= VGS
1.1
1.7
2.4
V
Drain-Source On Resistance
RDS(on)
Gate-Source Leakage Current
VGS= 10V, ID= 500mA
-
0.18
0.25
Ω
VGS= 4.5V, ID= 500mA
-
0.23
0.33
Ω
-
180
-
pF
-
32
-
pF
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
-
22
-
pF
Turn-on Delay Time
td(on)
-
10
-
ns
Rise Time
Turn-off Delay Time
Fall Time
tr
td(off)
VDS= 20V, VGS= 0V
f= 1MHz
VDD= 10V, ID= 500mA
-
8
-
ns
VGS= 10V
-
35
-
ns
tf
-
10
-
ns
Total Gate Charge
Qg
-
3.6
-
nC
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Diode Forward Voltage
VSD
VDS= 20V, ID= 500mA
VGS= 10V
IS= 500mA, VGS= 0V
-
0.6
-
nC
-
0.8
-
nC
-
0.7
1
V
■NOTES ON USE
1. Please use this IC within the absolute maximum ratings.
Even within the ratings, in case of high load use continuously such as high temperature, high voltage, high current and
thermal stress may cause reliability degradation of the IC.
2. Torex places an importance on improving our products and their reliability.
We request that users incorporate fail-safe designs and post-aging protection treatment when using Torex products in
their systems.
2/6
XP263N1001TR-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(1) Drain Current vs. Drain-Source Voltage
(2) Drain Current vs. Gate-Source Voltage
2
10
VDS=10V
4.5V
1.5
Ta=125℃
1
Drain Current : ID (A)
Drain Current: ID (A)
10V
3.5V
1
VGS=3.0V
0.5
25℃
0.1
-25℃
0.01
Ta=25℃
0
0.001
0.0
0.5
1.0
1.5
2.0
0.0
(3) Drain-Source On Resistance vs. Gate-Source Voltage
3.0
4.0
(4) Drain-Source On Resistance vs. Ambient Temperature
0.5
Drain-Source On Resistance: RDS(on) (Ω)
0.8
Drain-Source On Resistance: RDS(on) (Ω)
2.0
Gate-Source Voltage: VGS (V)
Drain-Source Voltage: VDS (V)
Ta=25℃
0.6
0.4
ID=500mA
0.2
0
0
2
4
6
8
0.4
VGS=4.5V
0.3
0.2
10V
0.1
ID=500mA
0
-50
10
0
50
100
150
Ambient Temperature: Ta (℃)
Gate-Source Voltage: VGS (V)
(5) Drain-Source On Resistance vs. Drain Current
(6) Source Current vs. Diode Forward Voltage
10
0.8
Ta=25℃
Ta=125℃
1
0.6
Source Current: IS (A)
Drain-Source On Resistance: RDS(on) (Ω)
1.0
0.4
4.5V
0.2
25℃
0.1
-25℃
0.01
VGS=10V
0.001
0
0.0
0.5
1.0
1.5
Drain Current: ID (A)
2.0
0.0
0.2
0.4
0.6
0.8
1.0
Diode Forward Voltage: VSD (V)
3/6
XP263N1001TR-G
■TYPICAL PERFORMANCE CHARACTERISTICS
(7) Ciss, Coss, Crss vs. Drain-Source Voltage
(8) Gate-Source Voltage vs. Gate Charge
1000
10
VDS=20V, ID=500mA
Ciss
Gate-Source Voltage: VGS (V)
Capacitance: Ciss, Coss, Crss (pF)
f=1MHz, Ta=25℃
100
Coss
10
Crss
8
6
4
2
Ta=25℃
1
0
0
10
20
30
40
50
60
(9) Area of Safe Operation
Drain Current: ID (A)
10
RDS(on)
(VGS=10V)
Limit
100µs
1ms
DC Operation
0.1
Ta=25℃
Single pulse
Mounted on a FR4 board
(8700mm2 x 1.6mm)
10ms
100ms
1s
0.01
0.1
4/6
1
10
Drain-Source Voltage: VDS (V)
1
2
Gate Charge: Qg (nC)
Drain-Source Voltage: VDS (V)
1
0
100
3
4
XP263N1001TR-G
■PACKAGING INFORMATION
For the latest package information go to, www.torexsemi.com/technical-support/packages
PACKAGE
OUTLINE / LAND PATTERN
SOT-23(TO-236)
SOT-23(TO-236) PKG
THERMAL CHARACTERISTICS
JESD51-7 Board
SOT-23(TO-236) PowerDissipation
■MARKING RULE
●SOT-23(TO-236)
SOT-23(TO-236)
①,②,③represents product series
3
MARK
①
6
②
3
③
N
PRODUCT SERIES
XP263N1001**-G
①
1
②
③
④
⑤
2
④,⑤ represents production lot number
01 to 09, 0A to 0Z, 11 to 9Z, A1 to A9, AA to AZ, B1 to ZZ repeated
(G,I,J,O,Q,W excluded)
*No character inversion used
5/6
XP263N1001TR-G
1.
The product and product specifications contained herein are subject to change without notice to
improve performance characteristics. Consult us, or our representatives before use, to confirm that
the information in this datasheet is up to date.
2.
The information in this datasheet is intended to illustrate the operation and characteristics of our
products. We neither make warranties or representations with respect to the accuracy or
completeness of the information contained in this datasheet nor grant any license to any intellectual
property rights of ours or any third party concerning with the information in this datasheet.
3.
Applicable export control laws and regulations should be complied and the procedures required by
such laws and regulations should also be followed, when the product or any information contained in
this datasheet is exported.
4.
The product is neither intended nor warranted for use in equipment of systems which require
extremely high levels of quality and/or reliability and/or a malfunction or failure which may cause loss
of human life, bodily injury, serious property damage including but not limited to devices or equipment
used in 1) nuclear facilities, 2) aerospace industry, 3) medical facilities, 4) automobile industry and
other transportation industry and 5) safety devices and safety equipment to control combustions and
explosions. Do not use the product for the above use unless agreed by us in writing in advance.
5.
Although we make continuous efforts to improve the quality and reliability of our products;
nevertheless Semiconductors are likely to fail with a certain probability. So in order to prevent personal
injury and/or property damage resulting from such failure, customers are required to incorporate
adequate safety measures in their designs, such as system fail safes, redundancy and fire prevention
features.
6.
Our products are not designed to be Radiation-resistant.
7.
Please use the product listed in this datasheet within the specified ranges.
8.
We assume no responsibility for damage or loss due to abnormal use.
9.
All rights reserved. No part of this datasheet may be copied or reproduced unless agreed by Torex
Semiconductor Ltd in writing in advance.
TOREX SEMICONDUCTOR LTD.
6/6
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