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2SA1020

2SA1020

  • 厂商:

    TOSHIBA(东芝)

  • 封装:

  • 描述:

    2SA1020 - Power Amplifier Applications Power Switching Applications - Toshiba Semiconductor

  • 数据手册
  • 价格&库存
2SA1020 数据手册
2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • • • Low Collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −1 A) High-speed switching: tstg = 1.0 μs (typ.) Complementary to 2SC2655 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating −50 −50 −5 −2 900 150 −55 to 150 Unit V V V A mW °C °C JEDEC TO-92MOD Note: Using continuously under heavy loads (e.g. the application of high JEITA ― temperature/current/voltage and the significant change in TOSHIBA 2-5J1A temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. Weight: 0.36 g (typ.) operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2006-11-09 2SA1020 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Symbol ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob ton 20 μs IB1 Switching time Storage time tstg Input IB2 Test Condition VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 IC = −10 mA, IB = 0 VCE = −2 V, IC = −0.5 A VCE = −2 V, IC = −1.5 A IC = −1 A, IB = −0.05 A IC = −1 A, IB = −0.05 A VCE = −2 V, IC = −0.5 A VCB = −10 V, IE = 0, f = 1 MHz Output 30 Ω Min ⎯ ⎯ −50 70 40 ⎯ ⎯ ⎯ ⎯ ⎯ Typ. ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 100 40 0.1 Max −1.0 −1.0 ⎯ 240 ⎯ −0.5 −1.2 ⎯ ⎯ ⎯ V V MHz pF Unit μA μA V IB2 IB1 ⎯ 1.0 ⎯ μs VCC = −30 V ⎯ ⎯ Fall time tf −IB1 = IB2 = 0.05 A DUTY CYCLE ≤ 1% 0.1 Note: hFE (1) classification O: 70 to 140, Y: 120 to 240 Marking A1020 Part No. (or abbreviation code) Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2006-11-09 2SA1020 VCE – IC −1.0 Common emitter −1.0 VCE – IC Common emitter VCE (V) −0.8 IB = −5 mA −10 −20 −40 −80 Ta = 25°C VCE (V) −0.8 IB = −5 mA −0.6 −20 −30 −40 −60 Ta = 100°C −80 −120 −160 −180 −120 −0.6 −160 −0.4 −200 Collector-emitter voltage Collector-emitter voltage −0.4 −200 −0.2 −0.2 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 Collector current IC (A) Collector current IC (A) VCE – IC −1.0 Common emitter 1000 −40 −20 −0.6 −30 −60 Ta = −55°C 500 hFE – IC Common emitter VCE = −2 V Ta = 100°C VCE (V) DC current gain hFE −0.8 IB = −10 mA −80 −120 −160 300 Collector-emitter voltage 100 50 30 25 −55 −0.4 −200 −0.2 10 −0.01 0 0 −0.4 −0.8 −1.2 −1.6 −2.0 −2.4 −2.8 −0.03 −0.1 −0.3 −1 −3 Collector current IC (A) Collector current IC (A) VCE (sat) – IC −1 −10 VBE (sat) – IC Common emitter Collector-emitter saturation voltage VCE (sat) (V) −0.5 −0.3 Base-emitter saturation voltage VBE (sat) (V) Common emitter IC/IB = 20 −5 −3 IC/IB = 20 −0.1 −0.05 −0.03 Ta = 100°C −1 −0.5 −0.3 Ta = −55°C −55 25 25 100 −0.01 −0.01 −0.03 −0.1 −0.3 −1 −3 −0.1 −0.01 −0.03 −0.1 −0.3 −1 −3 Collector current IC (A) Collector current IC (A) 3 2006-11-09 2SA1020 IC – VBE −2.0 1000 PC – Ta PC (W) Collector power dissipation −2.0 Common emitter VCE = −2 V 800 (A) Collector current IC −1.5 600 −1.0 Tc = 100°C 25 −55 400 −0.5 200 0 0 −0.4 −0.8 −1.2 −1.6 0 0 40 80 120 160 200 240 Base-emitter voltage VBE (V) Ambient temperature Ta (°C) Safe Operating Area −5 −3 IC max (pulsed)* IC max (continuous) 100 ms* −1 1 m s* 10 ms* (A) 1 s* −0.5 −0.3 DC operation Ta = 25°C Collector current IC −0.1 −0.05 −0.03 *: Single nonrepetitive pulse Tc = 25°C Curves must be derated linearly with increase in temperature. −0.3 −0.5 −1 −3 −5 VCEO max −10 −30 −50 −100 −0.01 −0.1 Collector-emitter voltage VCE (V) 4 2006-11-09 2SA1020 RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. 20070701-EN • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc. • The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer’s own risk. • The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. • The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. • Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 5 2006-11-09
2SA1020 价格&库存

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2SA1020G-Y-AB3-R
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  • 1+0.3528
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  • 500+0.3008
  • 1000+0.2878
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库存:4364

2SA1020L-Y-T9N-B
  •  国内价格
  • 1+0.378
  • 30+0.3645
  • 100+0.351
  • 500+0.324
  • 1000+0.3105
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库存:2000

2SA1020 Y(120-240)
  •  国内价格
  • 10+0.374
  • 100+0.341
  • 500+0.308
  • 1000+0.275
  • 2000+0.253
  • 4000+0.2464

库存:434